SS19 [SSC]
Schottky Barrier Rectifiers; 肖特基势垒整流器器
| 型号： | SS19 |
| 厂家： | 
SILICON STANDARD CORP. |
| 描述： | Schottky Barrier Rectifiers |
| 文件： | 总3页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS12 thru SS115
Schottky Barrier Rectifiers
PRODUCT SUMMARY
1.0AMP Surface Mount
SMA/DO-214AC
FEATURES
For surface mounted application ꢀ
Easy pick and place ꢀ
Metal to silicon rectifier, majority carrier conduction ꢀ
Low power loss, high efficiency ꢀ
High current capability, low VF ꢀ
High surge current capability ꢀ
Plastic material used carriers Underwriters
Laboratory Classification 94V-0 ꢀ
Epitaxial construction ꢀ
High temperature soldering:
260 oC / 10 seconds at terminals
Dimensions in inches and (millimeters)
MECANICAL DATA
Case: JEDEC SMA/DO-214AC Molded plastic ꢀ
Terminals: Pure tin plated, lead free ꢀ
Polarity: Indicated by cathode band ꢀ
Packaging: 12mm tape per EIA STD RS-481 ꢀ
Weight: 0.066 gram
Pb-free; RoHS-compliant
12/12/2007 Rev.1.00
www.SiliconStandard.com
1
SS12 thru SS115
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol SS SS SS SS SS SS SS SS
Type Number
Units
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
19 110 115
90 100 150
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
VRRM
VRMS
VDC
63
70 105
Maximum DC Blocking Voltage
90 100 150
Maximum Average Forward Rectified Current
at TL(See Fig. 1)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
1.0
30
A
I(AV)
A
IFSM
Maximum Instantaneous Forward Voltage
(Note 1)
IF= 1.0A @ 25oC
@ 100oC
0.5
0.4
0.75
0.65
0.80
0.70
0.1
2.0
5.0
0.95
0.85
VF
IR
V
Maximum DC Reverse Current @ TA =25 oC at
Rated DC Blocking Voltage @ TA=125 oC
0.4
mA
mA
10
5.0
Maximum DC Reverse Current at VR=33V
& TA=50 oC
Typical Junction Capacitance (Note 3)
-
uA
pF
HTIR
Cj
50
Typical Thermal Resistance ( Note 2 )
R
28
88
oC/W
ΘJL
R
θJA
TJ
Operating Temperature Range
Storage Temperature Range
-65 to +125
-65 to +150
-65 to +150
oC
oC
TSTG
Notes:
1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.2” x 0.2” (5.0mm x 5.0mm) Copper Pad Areas.
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
12/12/2007 Rev.1.00
www.SiliconStandard.com
2
SS12 thru SS115
RATINGS AND CHARACTERISTIC CURVES
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
1.0
0.5
0
50
40
RESISTIVE OR
INDUCTIVE LOAD
AT RATED TL
8.3ms Single Half Sine Wave
JEDEC Method
SS12- SS14
SS15-SS115
30
20
10
0
PCB MOUNTED ON 0.2X0.2"
(5.0X5.0mm) COPPER PAD AREAS
1
10
NUMBER OF CYCLES AT 60Hz
100
50
60
70
80
90 100 110 120 130 140 150 160 170
LEAD TEMPERATURE. (oC)
FIG.4- TYPICAL REVERSE CHARACTERISTICS
FIG.3- TYPICAL FORWARD CHARACTERISTICS
SS19-SS110
100
50
10
SS12-SS14
SS15-SS115
SS15-SS16
SS12-SS14
10
1
Tj=1250C
1
SS115
Tj=750C
0.1
0.01
0.1
Tj=25OC
PULSE WIDTH=300
1% DUTY CYCLE
S
0.001
0.01
0
20
40
60
80
100
120
140
0
.2
.4
.6
.8
1.0
1.2
1.4
1.6
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
FIG.5- TYPICAL JUNCTION CAPACITANCE
100
10
1
400
100
Tj=250C
f=1.0MHz
Vsig=50mVp-p
SS12-SS14
SS15-SS16
SS19-SS115
10
0.1
0.1
1.0
10
100
1
0.01
0.1
10
100
REVERSE VOLTAGE. (V)
T, PULSE DURATION. (sec)
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
12/12/2007 Rev.1.00
www.SiliconStandard.com
3
相关型号：
SS19-T3-LF
Rectifier Diode, Schottky, 1 Element, 1A, 90V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
WTE
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