SS25 [SSC]
SCHOTTKY BARRIER RECTIFIERS; 肖特基势垒整流器器
| 型号： | SS25 |
| 厂家： | 
SILICON STANDARD CORP. |
| 描述： | SCHOTTKY BARRIER RECTIFIERS |
| 文件： | 总2页 (文件大小：232K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS22-SS215
SCHOTTKY BARRIER RECTIFIERS
PRODUCT SUMMARY
2.0 AMPS Surface Mount
SMB/DO-214AA
FEATURES
.083(2.10)
.077(1.95)
For surface mounted application
Easy pick and place
.147(3.73)
.137(3.48)
Metal to silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low VF
High surge current capability
.187(4.75)
.167(4.25)
.012(.31)
.006(.15)
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
.103(2.61)
.078(1.99)
.012(.31)
.006(.15)
.056(1.41)
.035(0.90)
.008(.20)
.004(.10)
High temperature soldering:
260oC / 10 seconds at terminals
.209(5.30)
.201(5.10)
MECANICAL DATA
Dimensions in inches and (millimeters)
Case: Molded plastic
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
Pb-free; RoHS-compliant
Weight: 0.093gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
oC ambient temperature unless otherwise specified.
Ratings at 25
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol SS SS SS SS SS SS SS SS
Type Number
Units
22
23
24
25
26
29 210 215
90 100 150
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
20
30
40
50
60
V
V
V
VRRM
VRMS
VDC
14
20
21
30
28
40
35
50
42
60
63
70 105
Maximum DC Blocking Voltage
90 100 150
Maximum Average Forward Rectified Current
at TL(See Fig. 1)
2.0
50
A
A
I(AV)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
Maximum Instantaneous Forward Voltage
o
0.5
0.4
0.70
0.65
0.85
0.70
0.1
0.95
0.80
(Note 1)
IF= 2.0A @ 25 C
o
V
VF
@ 100 C
o
0.4
Maximum DC Reverse Current @ T =25 C at
A
mA
mA
IR
o
Rated DC Blocking Voltage @ T =125 C
A
10
5.0
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance ( Note 2 )
Cj
130
pF
R
17
75
o
θJL
C/W
R
θJA
o
Operating Temperature Range
Storage Temperature Range
TJ
-65 to +125
-65 to +150
-65 to +150
C
o
TSTG
C
Notes:
1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.4” x 0.4”(10mm x 10mm) Copper Pad Areas.
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
04/05/2007 Rev.1.00
www.SiliconStandard.com
1
SS22-SS215
RATINGS AND CHARACTERISTIC CURVES (SS22 THRU SS215)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
2.0
1.5
1.0
0.5
0
50
40
RESISTIVE OR
INDUCTIVE LOAD
8.3ms Single Half Sine Wave
JEDEC Method
AT RATED TL
SS25-SS215
SS22-SS24
30
20
10
0
PCB MOUNTED ON 0.2X0.2"
(5.0X5.0mm) COPPER PAD AREAS
1
10
NUMBER OF CYCLES AT 60Hz
100
LEAD TEMPERATURE. (OC)
FIG.4-TYPICALREVERSE CHARACTERISTICS
FIG.3- TYPICAL FORWARD CHARACTERISTICS
TJ=25OC
100
SS22-SS24
SS25-SS215
50
10
TJ=125O
C
10
1
SS25-SS26
SS22-SS24
TJ=75O
C
1
SS29-SS210
0.1
0.1
SS215
0.01
TJ=25OC
PULSE WIDTH=300
1% DUTY CYCLE
S
0.001
0
20
40
60
80
100
120
140
0.01
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.2
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
FIG.5-TYPICAL JUNCTION CAPACITANCE
100
10
1
400
100
Tj=25O
f=1.0MHz
Vsig=50mVp-p
C
SS29-SS215
SS22-SS24
SS25-SS26
10
0.1
0.1
1
10
100
1
0.01
0.1
10
100
REVERSE VOLTAGE. (V)
T, PULSE DURATION. (sec)
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
04/05/2007 Rev.1.00
www.SiliconStandard.com
2
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