SS6431GUSTR [SSC]
Adjustable High-Precision Shunt Regulator; 可调式精密并联稳压器
| 型号： | SS6431GUSTR |
| 厂家： | 
SILICON STANDARD CORP. |
| 描述： | Adjustable High-Precision Shunt Regulator |
| 文件： | 总11页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS6431G
Adjustable High-Precision Shunt Regulator
FEATURES
DESCRIPTION
Precision reference voltage.
The SS6431G is a three-terminal adjustable
SS6431G:
2.495V ±0.5%
precision shunt regulator with guaranteed
temperature stability over the applicable ex-
tended commercial temperature range. The
output voltage may be set at any level greater
than 2.495V (VREF) up to 30V merely by se-
lecting two external resistors that act as a
voltage divider network. This device has a
typical output impedance of 0.08W. Active
output circuitry provides a very sharp turn-on
characteristic, making this device an excellent
improved replacement for zener diodes in
many applications.
Sink current capability of 200mA.
Minimum cathode current for regulation of 250mA.
Equivalent full-range temperature coefficient of
50 ppm/°C.
Fast turn-on response.
Low dynamic output impedance of 80 milliohms.
Adjustable output voltage.
Low output noise.
Space saving packages: SOT-89, SOT-23, TO-
92 and SO-8.
Pb-free lead finish (second-level interconnect).
APPLICATIONS
Linear regulators.
Adjustable supplies.
Switching power supplies.
Battery operated computers.
Instrumentation.
The precise ±0.5% reference voltage tolerance
of the SS6431G makes it possible in many
applications to avoid the use of a variable
resistor, consequently saving cost and
eliminating the drift and reliability problems
associated with it.
Computer disk drives.
TYPICAL APPLICATION CIRCUIT
VIN
VOUT
R3
+
+
R1
R2
C1
C2
SS6431G
VOUT = (1+R1/R2) VREF
Precision Regulator
2/10/2005 Rev.2.10
www.SiliconStandard.com
1 of 11
SS6431G
ORDERING INFORMATION
PIN CONFIGURATION
SS6431GXXXX
SO-8 (GS)
TOP VIEW
1
REF
CATHODE
8
7
6
ANODE
ANODE
NC
ANODE
ANODE
NC
2
3
Packing type
TR: Tape and reel
TB: Tube (for SO-8)
5
4
3
Package type
S: Small outline
US: SOT-23
UN: SOT-23
X: SOT-89
SOT-23 (GUN)
FRONT VIEW
1: CATHODE
2: VREF
3: ANODE
Z: TO-92
1
2
Example: SS6431GSTR
3
SOT-23 (GUS)
FRONT VIEW
1: VREF
à in SO-8 package, with Pb-free
lead finish, shipped on tape and reel.
2: CATHODE
3: ANODE
1
2
SOT-89 (GX)
FRONT VIEW
1: VREF
2: ANODE
3: CATHODE
1
2
3
TO-92 (GZ)
FRONT VIEW
1: VREF
1
2
3
2: ANODE
3: CATHODE
ABSOLUTE MAXIMUM RATINGS
Cathode Voltage ........……………...............……………..………...............................30V
-
Continuous Cathode Current ...................………….……...................... 10mA ~ 250mA
Reference Input Current Range .......…………........……..........…………………… 10mA
-
Operating Temperature Range, TA.......………….........….........……………. 40°C ~ 85°C
Lead Temperature.......…………..................………………..………………………. 260°C
-
Storage Temperature.......…………..................……………..…………….. 65°C ~ 150°C
(Notes 1, 2)
Power Dissipation
SOT-89 Package .........…………...... 0.80W
TO-92 Package ….......…………....... 0.78W
Note 1:
Note 2:
T
= 150°C.
J, max
Ratings apply to ambient temperature at 25°C.
2/10/2005 Rev.2.10
www.SiliconStandard.com
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SS6431G
TEST CIRCUITS
IN
IIN
VZ
IN
IIN
R1
R2
SS6431G
IREF
VZ
IZ
IREF
IZ
VREF
VREF
SS6431G
Z=VREF(1+R1/R2)+IREFxR1
Fig. 1 Test Circuit for VZ=VREF
Fig. 2 Test Circuit for VZ>VREF
IN
VZ
IZ(OFF)
SS6431G
Fig. 3 Test Circuit for off-state Current
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
VZ=VREF
,
2.482
2.495
2.508
Reference Voltage
V
VREF
IIN =10mA (Fig.1)
VZ = VREF , IIN =10mA,
TA = 0°C~ +70°C (Fig. 1)
TA = -40°C~ +85°C (Fig. 1)
Deviation of Reference
Input Voltage Over
9.0
9.0
20
50
mV
VDEV
(Note 3)
Temperature
Ratio of the Change in Ref-
erence Voltage to the
Change in Cathode voltage
-0.5
-0.35
-2.0
-1.5
mV/V
mV/V
IZ=10mA
(Fig. 2)
DVZ=10V-VREF
DVZ=30V-10V
DVREF
DVZ
2/10/2005 Rev.2.10
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3 of 11
SS6431G
ELECTRICAL CHARACTERISTICS (Continued)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Reference Input Current
R1 =10kW, R2=¥ ,
IIN =10mA (Fig. 2)
IREF
0.8
3.5
mA
Deviation of Reference Input
Current over Temperature
R1 =10kW, R2=¥ ,
IIN =10mA
0.3
1.2
0.5
a IREF
mA
TA =-40°C ~ +85°C (Fig. 2)
Minimum Cathode current
for Regulation
VZ=VREF (Fig. 1)
IZ(MIN)
0.25
mA
Off-State Current
VZ=20V, VREF =0V (Fig. 3)
IZ(OFF)
RZ
0.1
1.0
0.3
mA
Dynamic Output Impedance
VZ=VREF
0.08
W
F<1kHz (Fig. 1)
(Note 4)
Where:
T T =full temperature change.
VMAX
-
2
1
a VREF can be positive or negative depending on
whether the slope is positive or negative.
VDEV = VMAX-VMIN
VMIN
Example: VDEV= 9.0mV, VREF= 2495mV,
T T = 70°C, slope is negative.
-
2
1
9.0mV
ê2495mV
6
é
ù10
ú
û
ë
aVREF =
= - 50ppm/°C
70°C
T1
T2
TEMPERATURE
Note 4. The dynamic output impedance, R , is de-
fined as:
z
Note 3. Deviation of reference input voltage, VDEV, is de-
fined as the maximum variation of the reference input
voltage over the full temperature range.
DVZ
RZ =
DIZ
When the device is programmed with two external re-
sistors, R1 and R2, (see Fig. 2), the dynamic output
impedance of the overall circuit, is defined as:
The average temperature coefficient of the reference in-
put voltage, a VREF is defined as:
é
ù
é
ù
VMAX - VMIN
VREF(at 25°C)
T2 - T1
VDEV
VREF(at 25°C)
T2 - T1
6
6
DV
DI
±
10
±
10
ú
R1
R2
ê
ú
ê
rz =
@ Rz
1+
ppm
ë
û
ë
û
DVREF
=
=
°C
2/10/2005 Rev.2.10
www.SiliconStandard.com
4 of 11
SS6431G
TYPICAL PERFORMANCE CHARACTERISTICS
1000
2.58
VZ =VREF
IZ =10mA
VZ =VREF
TA =25°C
800
600
400
200
0
2.56
2.54
2.52
2.50
2.48
2.46
2.44
2.42
2.40
IZ(MIN)
VREF=2.535V
VREF=2.495V
VREF=2.455V
-200
-400
-600
-40
-20
0
20
40
60
80
100
120
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Cathode Voltage (V)
Temperature ( C)
°
Fig. 4 Cathode Current vs. Cathode Voltage
Fig. 5 Reference Voltage vs. Temperature
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
1.20
R1=10KW
R2=¥
IZ=10mA
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
VZ=VREF
IZ=1mA to100mA
F <1KHz
-40
-20
0
20
40
60
80
100
120
-40
-20
0
20
40
60
80
100
120
Temperature (°C)
Temperature (°C)
Fig. 7 Dynamic Impedance vs. Temperature
Fig. 6 Reference Input Current vs. Temperature
2.5
2.0
1.5
1.0
0.5
0.0
0
-1
-2
-3
-4
-5
-6
VREF=0V
VZ=30V
IZ =10mA
TA =25°C
0
5
10
15
20
25
30
35
40
-40
-20
0
20
40
60
80
100
120
Cathode Voltage (V)
Fig. 8 Change in Reference Voltage vs. Cathode Voltage
Temperature (°C)
Fig. 9 Off-State Cathode Current vs. Temperature
2/10/2005 Rev.2.10
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5 of 11
SS6431G
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
80
70
IZ =10mA
Output
R1
60
50
40
30
20
10
0
A
T =25°C
R2
10k
47mF
CIN
250
Av
+
SS6431G
VIN
V1
-10
10
100
1k
10k
100k
1M
10M
Frequency (Hz)
Fig. 10 Small Signal Voltage Amplification vs. Frequency
Fig. 11 Test Circuit For Frequency Response
RB
OUTPUT
SS6431G
Input
220
Pulse Gen.
RA
50
f=100kHz
Output
Fig. 13 Test Circuit For Pulse Response
Fig. 12 Pulse Response
100
80
V
Z
R
VZ=VREF
Stable
150
60
40
20
0
SS6431G
C
L
VIN
Stable
1E-4
1E-3
0.01
0.1
1
10
Load Capacitance (mF)
Fig. 15 Test Circuit for Stability Boundary Conditions
Fig. 14 Stability Boundary Conditions
The areas between the curves represent conditions that
may cause the device to oscillate.
2/10/2005 Rev.2.10
www.SiliconStandard.com
6 of 11
SS6431G
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
R1
10
Output
Iz=10mA
50
T =25°C
A
SS6431G
+
R2
50
-
1
AC
3V
+
GND
0.1
1K
10K
100K
1M
Frequency (Hz)
Fig. 17 Test Circuit for Dynamic Impedance
Fig. 16 Dynamic impedance vs. Frequency
SYMBOL
BLOCK DIAGRAM
CATHODE (C)
REF (R)
+
-
REF (R)
SS6431G
2.495V
ANODE (A)
ANODE (A)
PIN DESCRIPTIONS
CATHODE Pin - Sinks current with a range from 250mA to 200mA for normal applications.
VREF Pin
-
-
Providing VREF=2.495V (typ.) for adjustable output voltage.
ANODE Pin
Anode pin sources current for normal application. The current value is the same as Cath-
ode pin.
2/10/2005 Rev.2.10
www.SiliconStandard.com
7 of 11
SS6431G
APPLICATION EXAMPLES
V
IN
V
IN
R3
R2
R1B
R4
R3
R1
R1A
SS6431G
SS6431G
R2A
SS6431G
R2B
+
ON
C
OFF
LED Turns on when Low Limit<VIN< High Limit
V
IN
Low Limit @ VREF (1+R1B/R2B)
Delay=R x C x
ln (
)
V
IN- VREF
High Limit @ VREF (1+R1A/R2A)
Fig. 18 Voltage Monitor
Fig. 19 Delay Timer
VIN
IOUT
R1
I
OUT
R
CL
V
IN
SS6431G
RS
SS6431G
R1
IOUT=VREF/ RCL
IOUT=VREF /RS
Fig. 20 Current Limiter or Current Source
Fig. 21 Constant-Current Sink
VIN
RIN
V
VOUT
FUSE
IN
V
OUT
R3
R3
R1
R1
SS6431G
SS6431G
R2
R2
VOUT @ (1+R1/R2) x VREF
VLIMIT @ (1+R1/R2) x VREF
Fig 22 Higher-Current Shunt Regulator
Fig 23 Crow Bar
2/10/2005 Rev.2.10
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8 of 11
SS6431G
APPLICATION EXAMPLES (Continued)
V
IN
R3
R1A
R1B
SS6431G
Output turns ON when
Low Limit <V < High Limit
IN
+
C1
SS6431G
V
R4
BE
R5
R2A
R2B
Low Limit@ VREF ( 1+ R1B/ R2B )+ VBE
High Limit @ VREF ( 1+ R1A/ R2A )
Fig 24 Over-Voltage/Under-Voltage Protection Circuit
PHYSICAL DIMENSIONS
This device is shipped with Pb-free lead finish (second-level interconnect).
8 LEAD PLASTIC SO (unit: mm)
D
SYMBOL
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
A
A1
B
H
E
C
D
E
e
e
1.27(TYP)
A
H
L
5.80
0.40
6.20
1.27
C
B
L
2/10/2005 Rev.2.10
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9 of 11
SS6431G
SOT-23 (unit: mm)
C
SYMBOL
MIN
1.00
—
MAX
1.30
0.10
0.90
0.50
0.25
3.10
1.80
D
A
A1
A2
b
L
E
H
0.70
0.35
0.10
2.70
1.40
C
D
E
q1
e
A
e
1.90 (TYP)
A2
A1
H
L
2.60
0.37
1°
3.00
—
b
1
9°
SOT-23 MARKING
Part No.
SS6431GUN
Marking
AC1NP
Part No.
SS6431GUS
Marking
AC1SP
SOT-89 (unit: mm)
A
C
D
SYMBOL
MIN
1.40
0.36
0.35
4.40
1.62
2.29
MAX
1.60
0.48
0.44
4.60
1.83
2.60
D1
A
B
C
D
H
E
D1
E
L
e
1.50 (TYP.)
3.00 (TYP.)
B
e
e1
H
e1
3.94
0.89
4.25
1.20
L
SOT-89 MARKING
Part No.
SS6431GX
Marking
AC1BP
2/10/2005 Rev.2.10
www.SiliconStandard.com
10 of 11
SS6431G
TO-92 (unit: mm)
SYMBOL
MIN
4.32
MAX
5.33
E
L
A
A
C
D
E
C
0.38 (TYP.)
e1
4.40
3.17
5.20
4.20
D
e1
L
1.27 (TYP.)
12.7
-
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
2/10/2005 Rev.2.10
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