SSM9987GM [SSC]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | SSM9987GM |
| 厂家： | 
SILICON STANDARD CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总5页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM9987GM
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
D2
D2
BVDSS
RDS(ON)
ID
80V
90mΩ
3.5A
Low Gate Charge
D1
D1
Single Drive Requirement
Surface Mount Package
G2
S2
G1
S1
SO-8
DESCRIPTION
The advanced power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast
D2
S2
D1
switching, ruggedized device design, lower on-resistance
and cost-effectiveness.
G2
G1
S1
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Drain-Source Voltage
Rating
80
Units
V
VDS
VGS
Gate-Source Voltage
±25
V
Continuous Drain Current3, VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Pulsed Drain Current1
ID@TA=25℃
ID@TA=70℃
IDM
3.5
A
2.8
A
30
A
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
-55 to 150
-55 to 150
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Parameter
Thermal Resistance Junction-ambient3
Value
62.5
Unit
Rthj-a
Max.
℃/W
05/31/2007 Rev.1.00
www.SiliconStandard.com
1
SSM9987GM
ELECTRICAL CHARACTERISTICS @Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=1mA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
80
-
-
0.08
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=3A
VGS=4.5V, ID=1A
V/℃
mΩ
RDS(ON)
-
90
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
105 mΩ
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=3A
VDS=80V, VGS=0V
VDS=64V ,VGS=0V
VGS=±25V
3
V
Forward Transconductance
Drain-Source Leakage Current (T=25oC)
7
-
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
1
j
Drain-Source Leakage Current (T=70oC)
-
25
j
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
±100
ID=3A
11
3
5
8
4
24
5
18
-
Qgs
Qgd
td(on)
tr
VDS=64V
VGS=4.5V
-
VDS=40V
-
ID=1A
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=40Ω
-
-
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V
980 1570
VDS=25V
70
50
-
-
f=1.0MHz
f=1.0MHz
1.2
1.8
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=1.6A, VGS=0V
IS=3A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.2
V
30
40
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.
05/31/2007 Rev.1.00
www.SiliconStandard.com
2
SSM9987GM
30
25
20
15
10
5
30
25
20
15
10
5
10V
7.0V
5.0V
4.5V
10V
7.0V
5.0V
4.5V
T A =150 o C
T
A =25 o C
V G =3.0V
V G =3.0V
0
0
0
3
6
9
12
0
3
6
9
12
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
180
150
120
90
2.3
1.8
1.3
0.8
0.3
I D = 3 A
I D =1A
T A =25 o C
V
G =10V
Ω
60
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
3
2
1
0
1.5
1.2
0.9
0.6
0.3
T j =150 o C
T j =25 o C
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
1.4
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
05/31/2007 Rev.1.00
www.SiliconStandard.com
3
SSM9987GM
f=1.0MHz
15
12
9
10000
1000
100
I D =3A
V DS =64V
V
V
DS =50V
DS =40V
C iss
6
C oss
C rss
3
0
10
0
10
20
30
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
0.2
0.1
10
0.1
100us
1ms
0.05
PDM
1
0.02
t
10ms
T
0.01
0.01
Duty factor = t/T
100ms
Single Pulse
Peak Tj = PDM x Rthja + Ta
0.1
T A =25 o C
Rthja = 135℃/W
Single Pulse
1s
DC
0.01
0.001
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
20
10
0
VG
V DS =5V
QG
4.5V
T j =25 o C
T j =150 o C
QGS
QGD
Q
Charge
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
www.SiliconStandard.com
05/31/2007 Rev.1.00
4
SSM9987GM
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
05/31/2007 Rev.1.00
www.SiliconStandard.com
5
相关型号：
SSMA1215004
RF SSMA Connector, 1 Contact(s), Female, Board Mount, Solder Terminal, Locking, Jack
SEMIPOWER
SSMA1224001
RF SSMA Connector, 1 Contact(s), Female, Panel Mount, Solder Lug Terminal, Hole .099-.111, Jack
SEMIPOWER
©2020 ICPDF网 联系我们和版权申明