12R1/DD
更新时间：2024-09-18 18:17:53
品牌：SSDI
描述：Rectifier Diode, 1 Phase, 1 Element, 3A, 125V V(RRM), Silicon, D2PAK-3
概述
规格参数
数据手册12R1/DD 概述
Rectifier Diode, 1 Phase, 1 Element, 3A, 125V V(RRM), Silicon, D2PAK-3 整流二极管
12R1/DD 规格参数
| 生命周期： | Active | 零件包装代码： | TO-263 |
| 包装说明： | D2PAK-3 | 针数： | 3 |
| Reach Compliance Code： | compliant | ECCN代码： | EAR99 |
| HTS代码： | 8541.10.00.80 | 风险等级： | 5.72 |
| 应用： | ULTRA FAST RECOVERY | 外壳连接： | CATHODE |
| 配置： | SINGLE | 二极管元件材料： | SILICON |
| 二极管类型： | RECTIFIER DIODE | JESD-30 代码： | R-PSSO-G3 |
| 最大非重复峰值正向电流： | 12 A | 元件数量： | 1 |
| 相数： | 1 | 端子数量： | 3 |
| 最高工作温度： | 175 °C | 最低工作温度： | -65 °C |
| 最大输出电流： | 3 A | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 认证状态： | Not Qualified | 最大重复峰值反向电压： | 125 V |
| 最大反向恢复时间： | 0.05 µs | 表面贴装： | YES |
| 端子形式： | GULL WING | 端子位置： | SINGLE |
| Base Number Matches： | 1 |
12R1/DD 数据手册
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5R1/DD
thru
15R1/DD
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
3 AMPS
50-150 VOLTS
EPION
HIGH SPEED
RECTIFIER
Designer's Data Sheet
FEATURES:
Optimized for 12V and 15V auxiliary output power supplies. The
EPION series has been designed to provide low forward voltage
drops and small delta shifts in reverse recovery time at high
temperature minimizing switching loses.
DDPAK
• Radiation Tolerant
• Ultra Fast Recovery Time
• Low Forward Voltage
• Low Reverse Leakage
• Surface Mountable Package
• High Reverse Blocking Voltage
• 175oC Operating TJ
SYMBOL
V
VALUE
UNITS
Volts
Maximum Ratings
50
70
100
125
150
5R
Peak Repetitive Reverse and
7R
RM(rep)
DC Blocking Voltage
10R
12R
15R
V
R
Half Wave Rectified Forward Current. Averaged Over
Full Cycle
Io
3
Amps
(Resistive load, 60Hz, Sine Wave, T = 55oC)
C
Peak Repetitive Forward Current
(T = 55oC, 8.3 ms Pulse, Allow Junction to Reach Equilib-
I
4
Amps
Amps
C
FM(rep)
rium Between Pulses)
Peak Surge Current
(T = 55oC, Superimposed on Rated Current at Rated
I
12
FM(surge)
C
Voltage, 8.3 ms Pulse)
TJ & Tstg
-65 TO +175
50
oC
Operating and Storage Temperature
Maximum Thermal Resistance
Junction to Case
R
2JC
oC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0017A
5R1/DD
thru
15R1/DD
PRELIMINARY
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
SYMBOL
VALUE
UNITS
Electrical Characteristics
Reverse Leakage Current
(T = 25oC, 300:s pulse minimum V = 150V)
I
35
:A
:A
J
R
R1
Reverse Leakage Current
(T = 125oC, 300:s pulse minimum V = 150V)
I
130
R2
J
R
Instantaneous Forward Voltage Drop
(T = 25oC, 300:sec pulse minimum
J
I = 3A
I
0.90
1.0
VDC
VDC
F
F1
I = 10A)
F
Instantaneous Forward Voltage Drop
(T = 125oC, 300:sec pulse minimum
J
I = 3A
I
0.75
0.90
VDC
VDC
F
F2
I = 10A)
F
Reverse Recovery Time
(T = 25oC, I = 0.5A, I = 1.0A, I = 0.25A)
T
RR1
50
nsec
A
F
R
RR
Reverse Recovery Time
(T = 150oC, I = 0.5A, I = 1.0A, I = 0.25A)
RR2
T
65
50
nsec
pF
A
F
R
RR
Junction Capacitance
(V = 10V , T = 25oC, f = 1MHz)
C
J
R
DC
A
CASE OUTLINE: DDPAK
FORWARD VOLTAGE @T = 25oC
FORWARD VOLTAGE @T = 125oC
J
J
10
1
10
1
0.1
0.1
0.01
0.001
0.0001
0.01
0.001
0.0001
0.3 0.4 0.5 0.6 0.7 0.8 0.9
Forward Voltage (V)
1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Forward Voltage (V)
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