12R4/DD [SSDI]
Rectifier Diode, 1 Phase, 1 Element, 10A, 125V V(RRM), Silicon, D2PAK-3;
| 型号： | 12R4/DD |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 10A, 125V V(RRM), Silicon, D2PAK-3 超快恢复二极管 快速恢复二极管 |
| 文件： | 总2页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY
5R4/DD
thru
15R4/DD
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
10 AMPS
50-150 VOLTS
EPION
HIGH SPEED
RECTIFIER
Designer's Data Sheet
FEATURES:
Optimized for 12V and 15V auxiliary output power supplies. The
EPION series has been designed to provide low forward voltage
drops and small delta shifts in reverse recovery time at high
temperature minimizing switching loses.
DDPAK
• Radiation Tolerant
• Ultra Fast Recovery Time
• Low Forward Voltage
• Low Reverse Leakage
• Surface Mountable Package
• High Reverse Blocking Voltage
• 175oC Operating TJ
SYMBOL
V
VALUE
UNITS
Volts
Maximum Ratings
50
70
100
125
150
5R
Peak Repetitive Reverse and
7R
RM(rep)
DC Blocking Voltage
10R
12R
15R
V
R
Half Wave Rectified Forward Current. Averaged Over
Full Cycle
Io
10
Amps
(Resistive load, 60Hz, Sine Wave, T = 55oC)
C
Peak Repetitive Forward Current
(T = 55oC, 8.3 ms Pulse, Allow Junction to Reach Equilib-
I
40
Amps
Amps
C
FM(rep)
rium Between Pulses)
Peak Surge Current
(T = 55oC, Superimposed on Rated Current at Rated
I
100
FM(surge)
C
Voltage, 8.3 ms Pulse)
TJ & Tstg
-65 TO +175
3
oC
Operating and Storage Temperature
Maximum Thermal Resistance
Junction to Case
R
2JC
oC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0016A
5R4/DD
thru
15R4/DD
PRELIMINARY
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
SYMBOL
VALUE
UNITS
Electrical Characteristics
Reverse Leakage Current
(T = 25oC, 300:s pulse minimum V = 150V)
I
45
:A
:A
J
R
R1
Reverse Leakage Current
(T = 125oC, 300:s pulse minimum V = 150V)
I
150
R2
J
R
Instantaneous Forward Voltage Drop
(T = 25oC, 300:sec pulse minimum
J
I = 10A
I
0.90
1.0
VDC
VDC
F
F1
I = 25A)
F
Instantaneous Forward Voltage Drop
(T = 125oC, 300:sec pulse minimum
J
I = 10A
I
0.75
0.90
VDC
VDC
F
F2
I = 25A)
F
Reverse Recovery Time
(T = 25oC, I = 0.5A, I = 1.0A, I = 0.25A)
T
RR1
60
nsec
A
F
R
RR
Reverse Recovery Time
(T = 150oC, I = 0.5A, I = 1.0A, I = 0.25A)
RR2
T
85
nsec
pF
A
F
R
RR
Junction Capacitance
(V = 10V , T = 25oC, f = 1MHz)
C
150
J
R
DC
A
CASE OUTLINE: DDPAK
FORWARD VOLTAGE @T = 25oC
FORWARD VOLTAGE @T = 125oC
J
J
100
10
1
100
10
1
0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85
0.65
0.7
0.75
0.8
0.85
0.9
0.95
Forward Voltage (V)
Forward Voltage (V)
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