1N8019SMSTXV [SSDI]
HYPER FAST SOFT RECOVERY RECTIFIER;型号: | 1N8019SMSTXV |
厂家: | SOLID STATES DEVICES, INC |
描述: | HYPER FAST SOFT RECOVERY RECTIFIER 软恢复二极管 快速软恢复二极管 |
文件: | 总2页 (文件大小:187K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1N8018 thru 1N8020
SERIES
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
1 AMP
100 – 200 VOLTS
9 nsec
Designer’s Data Sheet
Part Number/Ordering Information 1/
HYPER FAST
SOFT RECOVERY RECTIFIER
__ __ __
1N80
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
└
└
FEATURES:
Hyper fast reverse recovery time 9 ns max
Low forward voltage drop
S = S Level
Low reverse leakage current
Avalanche breakdown
Void free ceramic frit glass construction
High temperature category I eutectic metallurgical bond
Hermetically sealed
Package Type
__ = Axial Leaded
SMS = Surface Mount Square Tab
Device Type ( VRWM )
18 = 100 V
Solid silver lead
19 = 150 V
20 = 200 V
Excellent liquid-to-liquid cryogenic thermal shock
performance
Available in axial & square tab versions
For high efficiency applications
TX, TXV, and S-level screening available2/
Available as a QPL product per MIL-PRF-19500/769
Replacement for 1N6638, 1N6642 and 1N5806
MAXIMUM RATINGS 3/
RATING
SYMBOL
VALUE
UNIT
1N8018
1N8019
1N8020
100
150
200
Peak Repetitive Reverse Voltage
DC Blocking Voltage
VRWM
VR
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, TC = 25°C)
1
IO
Amp
Peak Surge Current
20
IFSM
Amps
°C
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach
equilibrium between pulses, TC = 25°C)
-65 to +175
Operating & Storage Temperature
TOP and TSTG
Thermal Resistance
SMS- Junction to End Tab
Axial- Junction to Lead @ .375”
20
80
RθJE
RθJL
°C/W
Axial Leaded
SMS
NOTES:
1/ For Ordering Information, Price, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on
Request.
3/ Unless Otherwise Specified, All Electrical Characteristics @25°C.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0158D
DOC
1N8018 thru 1N8020
SERIES
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
3/
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
SYMBOL
LIMIT
UNIT
@ IF = 1mA
@ IF = 10mA
@ IF = 100mA
@ IF = 200mA
@ IF = 500mA
@ IF = 1A
VF1
VF2
VF3
VF4
VF5
VF6
0.575
0.700
0.800
0.850
0.900
0.975
Maximum Instantaneous Forward Voltage Drop
(Pulsed, TA = 25°C)
Vdc
Maximum Instantaneous Forward Voltage Drop
(Pulsed, TA = 150°C)
@ IF = 10mA
@ IF = 100mA
VF7
VF8
0.50
0.62
Vdc
Vdc
Maximum Instantaneous Forward Voltage Drop
(Pulsed, TA = -55°C)
@ IF = 10mA
@ IF = 100mA
VF9
VF10
0.81
0.92
1N8018
1N8019
1N8020
110
165
220
Minimum Breakdown Voltage
IR = 100 μA
BVR
Vdc
nA
@ VR = 20V
@ VR = 75V
@ VR = max rated
IR1
IR2
IR3
50
75
150
Maximum Reverse Leakage Current
(300 μs Pulse Minimum , TA = 25°C)
@ VR = 20V
@ VR = 75V
@ VR = max rated
IR4
IR5
IR6
50
75
150
Maximum Reverse Leakage Current
(300 μs Pulse Minimum , TA = 150°C)
µA
pf
Maximum Junction Capacitance
(TA = 25°C , f = 1MHz) VR = 0V
CJ1
14
Maximum Junction Capacitance
(TA = 25°C , f = 1MHz) VR = 1.5V
CJ2
CJ3
trr
10
6
pf
Maximum Junction Capacitance
(TA = 25°C , f = 1MHz) VR = 10V
pf
Maximum Reverse Recovery Time
(IF = 50 mA, IR = 100 mA, IRR = 25 mA)
9
nsec
nsec
Maximum Forward Recovery Time
(IF = 50 mA)
tfr
18
SMS
AXIAL
DIM
A
B
C
D
MIN
MAX
.085”
.200”
.028”
--
DIM
A
B
C
D
MIN
MAX
.075”
.140”
.022”
1.50”
.070”
.168”
.019”
.001”
.056”
.125”
.018”
1.00”
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0158D
DOC
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