20R3STXV [SSDI]
Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, DO-4,;
| 型号： | 20R3STXV |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, DO-4, 超快速恢复二极管 |
| 文件： | 总2页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2R3S THRU 20R3S
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
8 AMPS
20 – 200 VOLTS
35 nsec
Part Number/Ordering Information 1/
R3S
__
│
__
└
Screening3/ __ = Not Screened
TX = TX Level
│
│
│
│
HYPER FAST RECTIFIER
TXV = TXV Level
S = S Level
└
Features:
Family/Voltage
2 = 20V
3 = 30V
4 = 40V
5 = 50V
•
•
•
•
•
•
•
Hyper Fast Recovery: 35nsec Maximum
Low Forward Voltage Drop
Low Reverse Leakage Current
Single Chip Construction
Hermetically Sealed Package
7 = 70V
10 = 100V
12 = 125V
15 = 150V
20 = 200V
Metalurgically Bonded Construction
TX, TXV, and S-Level Screening Available 2/
Maximum Ratings 2/
Symbol
Value
Units
2R3S
3R3S
20
30
4R3S
40
5R3S
7R3S
10R3S
12R3S
15R3S
20R3S
VRRM
VRWM
VR
50
70
100
125
150
200
Peak Repetitive Reverse Voltage
Volts
Average Rectified Forward Current
Io
8
200
Amps
Amps
ºC
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C)
IFSM
TOP
TSTG
&
Operating & Storage Temperature
-65 to +175
1.5
Maximum Total Thermal Resistance
Junction to Case
ºC/W
RθJC
DO-4:
Notes:
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.
2/ Unless Otherwise Specified, All Maximum Ratings/Electrical Characteristics @25°C.
3/ Screened to MIL-PRF-19500.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0029D
DOC
2R3S THRU 20R3S
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics
Symbol
Max
Units
Instantaneous Forward Voltage Drop
(IF=8A, TA=25 ºC, 300μsec pulse)
0.90
VF
VDC
Reverse Leakage Current
(Rated VR, TA=25 ºC, 300μsec pulse minimum)
100
2.0
35
IR1
IR2
tRR
CJ
μA
mA
nsec
pF
Reverse Leakage Current
(Rated VR, TA=100 ºC, 300μsec pulse minimum)
Reverse Recovery Time
(TA=25 ºC, IF = 0.5A, IR = 1.0A, IRR = 0.25A)
Typical Junction Capacitance
(VR = 10VDC, TA = 25ºC, f = 1MHz)
300
Notes:
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Unless Otherwise Specified, All Maximum Ratings/Electrical Characteristics @25°C.
Case Outline: DO-4
Stud: Cathode
Lead: Anode
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0029D
DOC
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