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2N3555 [SSDI]

Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 30V V(DRM), 30V V(RRM), 1 Element, TO-5, TO-5, 3 PIN;

2N3555


元器件型号：	2N3555
生产厂家：	SOLID STATES DEVICES, INC
描述和应用：	Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 30V V(DRM), 30V V(RRM), 1 Element, TO-5, TO-5, 3 PIN 栅栅极
PDF文件：	总1页 (文件大小：49K)
下载文档：	下载PDF数据表文档文件
型号参数：2N3555参数

2N3556

2N3556

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0 TI

2N3557

2N3557

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0 TI

2N3557

Silicon Controlled Rectifier, 2A I(T)RMS, 1600mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-39, TO-39, 3 PIN

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0 SSDI

2N3558

Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package

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16 SEME-LAB

2N3558

Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package

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24 SEME-LAB

2N3558

2N3558

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0 TI

2N3558

Silicon Controlled Rectifier, 2A I(T)RMS, 1600mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-39, TO-39, 3 PIN

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0 SSDI

2N3559

2N3559

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0 TI

2N356

TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 500MA I(C) | TO-5

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23 ETC

2N3560

暂无描述

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0 TI

2N3560

Silicon Controlled Rectifier, 2.2A I(T)RMS, 1600mA I(T), 60V V(DRM), 60V V(RRM), 1 Element, TO-5, TO-5, 3 PIN

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0 SSDI

2N3561

2N3561

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0 TI

2N3561

Silicon Controlled Rectifier, 2A I(T)RMS, 1600mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-39, TO-39, 3 PIN

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0 SSDI

2N3562

SCR, V(DRM) = 200V TO 299.9V

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23 NJSEMI

2N3562

2N3562

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0 TI

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