F00175_15 [SSDI]
Power MOSFET;
| 型号： | F00175_15 |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Power MOSFET |
| 文件： | 总2页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFF24N50/3
SFF24N50/3T
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
24 AMP / 500 Volts
0.2 W
DESIGNER’S DATA SHEET
N-Channel
Features:
Power MOSFET
· Rugged Construction with Polysilicon Gate Cell
· Low RDS(ON) and High Transconductance
· Excellent High Temperature Stability
· Very Fast Switching Speed
TO-3
· Fast Recovery and Superior dV/dt Performance
· Increased Reverse Energy Capability
· Low Input and Transfer Capacitance for Easy Paralleling
· Hermetically Sealed Surface Mount Power Package
· TX, TXV, Space Level Screening Available
· Replacement for IXTH24N50 Types
Maximum Ratings
Symbol
Value
500
±20
24
Units
Drain – Source Voltage
VDS
VGS
ID
Volts
Volts
Amps
Amps
Gate – Source Voltage
Continuous Drain Current (Tj limited)
Avalanche Current
Repetitive
21
IAR
Repetitive
Single Pulse
1
690
EAR
EAS
Avalanche Energy
mJ
ºC
-55 to +150
Operating & Storage Temperature
Thermal Resistance, Junction to Case
Top & Tstg
0.75
(typ 0.6)
ºC/W
RqJC
167
126
Total Device Dissipation @ TC=25ºC
Total Device Dissipation @ TC=55ºC
PD
WATTS
Package Outline: TO-3
Pin Out:
Pin 1: GATE
.165
2x Ø
.675
.655
.135 MAX
.525 MAX
2x R.188 MAX
.151
SEATING PLANE
Pin 2: SOURCE
Pin 3: DRAIN
.043
.038
2x
2
Notes:
Ø.875
MAX
.440
.420
1.
P/N: SFF 24N50/3:
.225
.205
2x
Pin Diameter : 0.043”
0.038”
1
2.
P/N: SFF24N50/3T:
Pin Diameter: 0.063”
0.058”
.450
.250
1.197
1.177
2x .312 MIN
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00175E
DOC
SFF24N50/3
SFF24N50/3T
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics @ TJ = 25ºC
(Unless Otherwise Specified)
Drain to Source Breakdown Voltage
(VGS=0 V, ID=250 mA)
Symbol
BVDSS
RDS(on)
ID(on)
Min
500
––
Typ
––
Max
––
Units
Volts
Drain to Source On State Resistance
(VGS=10 V, ID=50% Rated ID)
––
0.2
––
W
A
On State Drain Current
(VDS>ID(on) X RDS(on) Max, VGS=10V)
24
––
Gate Threshold Voltage
(VDS=VGS, ID= 4mA)
VGS(th)
gfs
V
2.0
8
––
4.0
––
Forward Transconductance
(VDS>ID(on) X RDS(on) Max, IDS= 50% Rated ID)
mho
12
Zero Gate Voltage Drain Current
(VDS=max rated voltage, VGS=0 V)
(VDS=80% rated VDS, VGS=0 V, TA=125ºC)
––
––
––
––
250
1000
IDSS
mA
nA
nC
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
––
––
––
––
+100
-100
IGSS
At rated VGS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Qg
Qgs
Qgd
VGS=10 Volts
50% rated VDS
50% Rated ID
––
––
––
135
28
62
180
40
85
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
VDD=50% Rated VDS
50% Rated ID
RG= 6.2W
––
––
––
––
16
33
65
30
30
45
130
40
td(on)
tr
td(off)
nsec
V
VGS=10 Volts
tf
Diode Forward Voltage
(IS= Rated ID, VGS=0 V, TJ=25ºC)
VSD
––
––
1.5
TJ=25ºC
IF=10A
Di/dt=100A/msec
Diode Reverse Recovery Time
Reverse Recovery Charge
trr
QRR
nsec
nC
––
––
––
––
500
––
Input Capacitance
Input Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS=0 Volts
VDS=25 Volts
f=1 MHz
––
––
––
4200
450
135
––
––
––
pF
For thermal derating curves and other characteristics please contact SSDI Marketing Department.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00175E
DOC
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