FT0029B [SSDI]

Avalanche Rated N-channel MOSFET;


型号：	FT0029B
厂家：	SOLID STATES DEVICES, INC
描述：	Avalanche Rated N-channel MOSFET
文件：	总2页 (文件大小：133K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SFF23N60S1

SFF23N60S2

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

21 AMP, 600 Volts, 320 mΩ

Avalanche Rated N-channel

MOSFET

SMD1, 2

Features:

•

Rugged poly-Si gate

Lowest ON-resistance in the industry

Avalanche rated

Hermetically Sealed, Hot Case power SMD

Low Total Gate Charge

Fast Switching

Note

TX, TXV, S-Level screening available

Improved (R_DS(ON)Q_G) figure of merit

1/ maximum current limited by package configuration

Maximum Ratings

Symbol

Value

Units

600

Drain - Source Voltage

V_DSS

±30

±40

continuous

transient

Gate – Source Voltage

V_GS

@ T_C= 25ºC

@ T_C= 125ºC

I_D1

I_D2

Max. Continuous Drain Current (package limited)

Pulsed Drain (Instantaneous) Current (Tj limited)

Max. Avalanche current

I_D3

I_AR

@ T_C= 25ºC

@ L= 0.1 mH

@ T_C= 25ºC

1500 / 30

300

Single / Repetitive Avalanche Energy

Total Power Dissipation

E_AS/ E_AR

P_D

-55 to +150

0.42 (typ 0.3)

Operating & Storage Temperature

Maximum Thermal Resistance

ºC

T_OP& T_STG

R_0JC

Junction to Case

ºC/W

SMD 1

SMD 2

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0029B

DOC

SFF23N60S1

SFF23N60S2

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Electrical Characteristics ^4/

Symbol Min

Typ Max Units

Drain to Source Breakdown Voltage

V_GS= 0V, I_D= 250μA

600

620

––

BV_DSS

R_DS(on)

V_GS= 10V, I_D= 11.5A, Tj= 25^oC

V_GS= 10V, I_D= 25A, Tj=25^oC

––

300

670

320

––

Drain to Source On State Resistance

Gate Threshold Voltage

mΩ

_GS=10V, I_D= 11.5A, Tj= 125^oC

_DS= V_GS, I_D= 4mA, Tj= 25^oC

2.0

––

3.5

3.4

4.5

––

V_GS(th)

I_GSS

_DS= V_GS, I_D= 1mA, Tj= 25^oC

V_GS= ±30V, Tj= 25^oC

V_GS= ±20V, Tj= 125^oC

––

±100

––

Gate to Source Leakage

_DS= 600V, V_GS= 0V, T_j= 25^oC

V_DS= 480V, V_GS= 0V, T_j=

125^oC

––

0.1

0.085

μA

Zero Gate Voltage Drain Current

Forward Transconductance

I_DSS

_DS= 10V, I_D= 11.5A, T_j= 25^oC

––

Mho

g_fs

V_GS= 10V

V_DS= 300V

I_D= 16.5A

––

100

––

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Q_g

Q_gs

Q_gd

V_GS= 10V

––

Turn on Delay Time

Rise Time

Turn off Delay Time

Fall Time

t_d(on)

t_r

t_d(off)

t_f

V_DS= 300V

nsec

I_D= 16.5A

R_G= 2.0Ω, pw= 3us

I_F= 23A, V_GS= 0V

I_F= 16.5A, V_GS= 0V

––

1.0

0.87

1.5

––

Diode Forward Voltage

V_SD

––

210

tbd

1.3

250

––

nsec

μC

Diode Reverse Recovery Time

Peak Reverse Recovery Current

Reverse Recovery Charge

t_rr

I_RM(rec)

Q_rr

I_F= 16.5A, di/dt = 100A/usec

V_GS= 0V

V_DS= 25V

f = 1 MHz

––

4100

400

120

––

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

C_iss

C_oss

C_rss

NOTES:

* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

1/ For Ordering Information, Price, and Availability Contact Factory.

2/ Screening per MIL-PRF-19500.

3/ For Package Outlines Contact Factory.

4/ Unless Otherwise Specified, All Electrical Characteristics @25^oC.

PIN ASSIGNMENT (Standard)

Available Part Numbers:

Package

SMD1

SMD2

Drain

Pin 1

Source

Pin 2

Gate

Pin 3

Consult Factory

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0029B

DOC

相关型号：

FT0029B_15

Avalanche Rated N-channel MOSFET

SSDI