RH0008C [SSDI]
Rectifier;
| 型号： | RH0008C |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier |
| 文件： | 总2页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR429
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR429SMS
DESIGNER’S DATA SHEET
1 AMP, 700 V
Hyper Fast
Rectifier
SDR429
__ __
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
│
│
│
│
│
└
└
S = S Level
Features:
Package Type
• High Voltage 700 V continuous
• Very Fast Switching < 20 nS
• Low High Temperature Leakage < 15 µA
• Very Fast Switching @ 100 º C < 35 nS
• Hermetically Sealed
__ = Axial Leaded
SMS = Surface Mount Square Tab
• Higher Voltages Available, consult Factory
• TX, TXV, S Level screening Available2/
• Available Axial Leaded or Surface Mount (Square Tab)
Maximum Ratings
Symbol
Value
700
Units
Volts
Amps
VRRM
VRSM
Peak Repetitive and Peak Surge Reverse Voltage
Average Rectified Forward Current
(Resistive Load, 60 hz Sine Wave)
Io
1.0
Non Repetitive Surge Current
(8.3 ms Pulse Half Sine Wave Superimposed on Io)
IFSM
18
Amps
ºC
Operating & Storage Temperature
Top & Tstg
-55 to +175
Maximum Thermal Resistance
Junction to Lead, L = 1/8 "
Junction to End Tab
RθJL
RθJE
12
9
ºC/W
NOTES:
Axial Lead Diode
SMS
1/ For Ordering Information, Price, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0008C
SDR429
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic
Symbol
Min
Typ
Max
Units
Volts
Volts
Volts
µA
Instantaneous Forward Voltage Drop
(Tj = 25ºC, 300 µsec pulse)
If = 1A
If = 3A
Vf1
Vf2
––
––
2.35
3.5
2.5
3.8
Instantaneous Forward Voltage Drop
(Tj = 100ºC, 300 µsec pulse)
If = 1A
If = 3A
Vf3
Vf4
––
––
1.65
2.5
1.8
2.7
Instantaneous Forward Voltage Drop
(Tj = -55ºC, 300 µsec pulse)
If = 1A
If = 3A
Vf5
Vf6
––
––
3.0
4.5
3.75
5.30
Reverse Leakage Current
(Vr = 700 V, Tj = 25ºC, 300 µsec pulse)
Ir1
Ir2
––
––
––
––
0.2
5.0
1.0
20
Reverse Leakage Current
(Vr = 700 V, Tj = 100ºC, 300 µsec pulse)
µA
Reverse Recovery Time
(IF = 0.5A, IR = 1A, IRR = 0.25A)
TA = 25ºC
TA = 100ºC
tRR1
tRR2
17
32
20
35
nsec
pF
Junction Capacitance
(Vr=10 Vdc, Tc=25ºC, f=1Mhz)
Cj
22
30
DIM
MIN
MAX
Case Outline: (Axial)
A
B
C
D
0.120”
0.150”
0.027”
1.00”
0.145”
0.190”
0.033”
--
D
B
D
ØC
ØA
DIM
A
MIN
MAX
0.180”
0.240”
0.030”
--
Case Outline: (SMS)
0.170”
0.200”
0.020”
0.005”
B
B
A
C
D
A
D
C
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0008C
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