RU0013G_15 [SSDI]

ULTRA FAST RECTIFIER;
RU0013G_15
型号: RU0013G_15
厂家: SOLID STATES DEVICES, INC    SOLID STATES DEVICES, INC
描述:

ULTRA FAST RECTIFIER

文件: 总2页 (文件大小:155K)
中文:  中文翻译
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SDR3A and SDR3ASMS  
thru  
SDR3N and SDR3NSMS  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
3.0 AMPS  
Designer’s Data Sheet  
Part Number/Ordering Information 1/  
__ __ __  
50 1200 VOLTS  
50 – 80 nsec ULTRA FAST RECTIFIER  
SDR3  
Screening 2/  
__ = Not Screened  
TX = TX Level  
TXV = TXV  
FEATURES:  
Ultra Fast Recovery:  
50-80 ns Max @ 25ºC 4/  
85-125 ns Max @ 100ºC4/  
Single Chip Construction  
PIV to 1200 Volts  
Low Reverse Leakage Current  
Hermetically Sealed  
S = S Level  
Package Type  
__ = Axial Leaded  
SMS = Surface Mount Square Tab  
For High Efficiency Applications  
Available in Axial and Surface Mount Versions  
Metallurgically Bonded  
A = 50 V  
B = 100V  
D = 200V  
G = 400V  
J = 600V  
K = 800V  
M = 1000V  
N = 1200V  
Family  
TX, TXV, and S-Level Screening Available 2/  
MAXIMUM RATINGS 3/  
RATING  
SYMBOL  
VALUE  
UNIT  
SDR3A and SDR3ASMS  
SDR3B and SDR3BSMS  
SDR3D and SDR3DSMS  
SDR3G and SDR3GSMS  
SDR3J and SDR3JSMS  
SDR3K and SDR3KSMS  
SDR3M and SDR3MSMS  
SDR3N and SDR3NSMS  
50  
100  
200  
400  
600  
800  
1000  
1200  
Peak Repetitive Reverse  
Voltage  
VRRM  
VRWM  
VR  
Volts  
And  
DC Blocking Voltage  
Rectified Forward Forward Current  
(Resistive Load, 60 Hz, Sine Wave, TA = 25°C)  
3
Amp  
IO  
Peak Surge Current  
75  
Amps  
IFSM  
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach  
equilibrium between pulses, TA = 25°C)  
-65 to +175  
Operating & Storage Temperature  
°C  
T
OP and TSTG  
Thermal Resistance, Junction to Lead, L = 3/8”  
Junction to End Tab  
RθJL  
RθJE  
20  
14  
°C/W  
NOTES:  
SMS  
Axial Leaded  
1/ For Ordering Information, Price, and Availability- Contact Factory.  
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.  
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.  
4/ Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp, IRR to .25 Amp.  
5/ For information on operating curves, contact factory.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RU0013G  
DOC  
SDR3A and SDR3ASMS  
thru  
SDR3N and SDR3NSMS  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
3/  
ELECTRICAL CHARACTERISTICS  
CHARACTERISTICS  
SYMBOL VALUE UNIT  
Instantaneous Forward Voltage Drop  
(IF = 3Adc, 300- 500 μs Pulse, TA = 25°C)  
SDR3A thru SDR3J  
SDR3K thru SDR3N  
1.35  
1.90  
VF1  
VF2  
IR1  
IR2  
CJ  
Vdc  
Vdc  
μA  
μA  
pf  
Instantaneous Forward Voltage Drop  
(IF = 3Adc, 300- 500 μs Pulse, TA = -55°C)  
SDR3A thru SDR3J  
SDR3K thru SDR3N  
1.50  
2.10  
Maximum Reverse Leakage Current  
(Rated VR, 300 μs Pulse Minimum , TA = 25°C)  
5
Maximum Reverse Leakage Current  
(Rated VR, 300 μs Pulse Minimum , TA = 100°C)  
500  
50  
Junction Capacitance  
(VR = 10Vdc, TA = 25°C , f = 1MHz)  
SDR3A thru SDR3J  
SDR3K  
50  
60  
70  
80  
Maximum Reverse Recovery Time 4/  
trr  
ns  
SDR3M  
SDR3N  
DIMENSIONS  
DIM. MIN. MAX.  
DIMENSIONS  
Axial Leaded Case Outline 5/:  
Square Tab Surface Mount Case  
Outline 5/:  
DIM. MIN. MAX.  
A
B
C
D
.120” .180”  
--- .230”  
.047” .053”  
1.00” ---  
A
B
C
D
.172” .180”  
.180” .280”  
.022” .028”  
.002”  
---  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RU0013G  
DOC  

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