SDA167GNTX [SSDI]
Bridge Rectifier Diode,;
| 型号： | SDA167GNTX |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Bridge Rectifier Diode, |
| 文件： | 总2页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDA167
Solid State Devices, Inc.
Series
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
25 Amp
Three Phase Bridge
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
Rectifier Assembly
SDA167 __ __ __ __
Screening 2/
__ = Not Screened
400 – 1000 Volts
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
TX = TX Level
TXV = TXV Level
S = S Level
Features:
PIV 400 – 800 Volts
Terminal 3/ __ = Blade
Average Output Current: 25 Amps
Low Reverse Leakage Current
Constructed with Void-Free, Hermetically
Sealed Discretes
Aluminum Case for Maximum Thermal
Conductivity
T = Turret
Finish __ = Anodized Case
N = Ni Plated Case
Voltage
D = 400V
Electrically Insulated Aluminum Case
TX, TXV, & Space Level Screening Available
Available in Standard and Fast Recovery
Versions – Consult Factory
E = 600V
F = 800V
G = 1000V
Maximum Ratings4/
Symbol
Value
Units
Volts
SDA167D
SDA167E
SDA167F
SDA167G
400
600
800
VRRM
VRWM
VR
Peak Repetitive Reverse and
DC Blocking Voltage
1000
Average Rectified Forward Current 5/, 6/
(Resistive Load, 60Hz Sine Wave, TC = 55°C)
Peak Surge Current 5/
(8.3 ms Pulse, Superimposed on Rated Current at Rated
Voltage, TC = 55°C)
IO
25
Amps
Amps
IFSM
150
Operating & Storage Temperature
Maximum Junction Temperature
Top & Tstg
TJ
-55 to +150
175
ºC
Maximum Thermal Resistance 5/
(Junction to Case)
1.5
ºC/W
RJC
Notes:
SDA167
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
Blade (_)
Turret (T)
1/ For ordering information, price, and availability - contact factory.
2/ Screening flows available on request.
3/ Other termination available – contact factory.
4/ Unless otherwise specified, all maximum ratings / electrical characteristics
@25ºC.
5/ Rating applies to the total bridge.
6/ Derate linearly at 0.263 A/°C for TC > 55°C.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RA0048C
DOC
SDA167
Solid State Devices, Inc.
Series
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic (per leg) 4/
Symbol
BVR
Min
Typ
Max
Units
Volts
SDA167D
SDA167E
SDA167F
SDA167G
420
620
820
-
-
-
-
-
-
-
-
Peak Reverse Voltage
(IR = 50µA)
1020
IF = 3 A
IF = 9 A
-
-
-
-
1.05
1.20
Instantaneous Forward Voltage Drop
Volts
A
VF
IR1
IR2
(300 - 500µsec pulse)
Reverse Leakage Current
(Rated VR, 300µs pulse minimum)
-
-
-
-
-
-
10
100
15
Reverse Leakage Current
(Rated VR, TA = 100ºC, 300µs pulse minimum)
A
Insulation Leakage
(All terminals to case, VR = 1500V, RINS = 100MΩ)
A
CASE OUTLINE: SDA167 - Blade (_)
SDA167 - Turret (T)
Notes:
Available Part Numbers:
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening flows available on request.
SDA167D, SDA167DT
SDA167E, SDA167ET
SDA167F, SDA167FT
SDA167G, SDA167GT
3/ Other termination available – contact factory.
4/ Unless otherwise specified, all maximum ratings / electrical characteristics @25ºC.
5/ Rating applies to the total bridge.
6/ Derate linearly at 0.263 A/°C for TC > 55°C.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RA0048C
DOC
相关型号：
SDA167GT
Bridge Rectifier Diode, 3 Phase, 25A, 1000V V(RRM), Silicon, HERMETIC SEALED, ALUMINUM PACKAGE-5
SSDI
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