SDA167HCFUFN [SSDI]
Bridge Rectifier Diode,;
| 型号： | SDA167HCFUFN |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Bridge Rectifier Diode, |
| 文件： | 总2页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDA167HC
Solid State Devices, Inc.
Series
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
33 Amp
Three Phase Bridge
SDA167H C E UF __ __ __
Screening 2/
└
│
│
│
│
│
│
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
│
└
│
│
│
│
│
└
Rectifier Assembly
__ = Not Screened
TX = TX Level
TXV = TXV Level
600 – 1000 Volts
Terminal 3/ __ = Blade
Features:
T = Turret
Up to 1000 V Blocking Voltage
Average Output Current: 33 Amps
Low Reverse Leakage Current
Constructed with Void-Free, Hermetically Sealed
Discretes
Aluminum Case for Maximum Thermal
Conductivity
Electrically Insulated Aluminum Case
TX & TXV Level Screening Available
Standard and Fast Recovery Versions Available
– Consult Factory
Finish __ = Anodized Case
N = Ni Plated Case
Recovery Time
UF = Ultra Fast Recovery
Voltage
E = 600V
F = 800V
G = 1000V
Polarity
C = Normal
R = Reverse
Maximum Ratings4/
Symbol
Value
Units
Volts
SDA167HCEUF
SDA167HCFUF
SDA167HCGUF
VRRM
VRWM
VR
600
800
1000
Peak Repetitive Reverse and
DC Blocking Voltage
Average Rectified Forward Current 5/, 6/
(Resistive load, 60Hz, Sine Wave, TC = 55°C)
Peak Surge Current 5/
(8.3 ms Pulse, Half Sine Wave, TA = 25°C)
IO
33
Amps
Amps
ºC
IFSM
250
Operating & Storage Temperature
Maximum Junction Temperature
Top & Tstg
TJ
-55 to +150
175
Maximum Thermal Resistance 5/
Junction to Case
0.85
ºC/W
RJC
Notes:
SDA167
1/ For ordering information, price, and availability, contact
Blade (_)
Turret (T)
factory.
2/ Screening flows available on request.
3/ Other termination available – contact factory.
4/ Unless otherwise specified, all maximum ratings / electrical
characteristics @25ºC.
5/ Rating applies to the total bridge.
6/ Derate linearly at 0.35A/°C for TC > 55°C.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RA0018C
DOC
SDA167HC
Solid State Devices, Inc.
Series
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic (per leg) 4/
Symbol
BVR
Min
Max
Units
Vdc
SDA167HCEUF
SDA167HCFUF
SDA167HCGUF
620
820
1020
-
-
-
Peak Reverse Voltage
(IR = 100µA)
IF = 3 A
IF = 9 A
VF1
VF2
-
-
1.42
1.80
Instantaneous Forward Voltage Drop
Vdc
A
(300 - 500µsec pulse)
Reverse Leakage Current
(Rated VR, 300µs pulse minimum)
IR1
IR2
-
20
750
70
-
Reverse Leakage Current
(Rated VR, TA = 100ºC, 300µs pulse minimum)
-
-
A
Reverse Recovery Time
(IF = 0.5A, IR = 1A, IRR = 0.25A)
tRR
nsec
MΩ
Isolation Resistance
(All terminals in common to case)
1500 V
100
RISO
CASE OUTLINE: SDA167 - Blade (_)
SDA167 - Turret (T)
Notes:
Available Part Numbers:
1/ For ordering information, price, and availability, contact factory.
2/ Screening flows available on request.
SDA167HCEUF, SDA167HCEUFT
SDA167HCFUF, SDA167HCFUFT
SDA167HCGUF, SDA167HCGUFT
SDA167HREUF, SDA167HREUFT
SDA167HRFUF, SDA167HRFUFT
SDA167HRGUF, SDA167HRGUFT
3/ Other termination available – contact factory.
4/ Unless otherwise specified, all maximum ratings / electrical characteristics @25ºC.
5/ Rating applies to the total bridge.
6/ Derate linearly at 0.35A/°C for TC > 55°C.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RA0018C
DOC
相关型号：
©2020 ICPDF网 联系我们和版权申明