SDA669MFTUB [SSDI]
Rectifier Diode,;
| 型号： | SDA669MFTUB |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, |
| 文件： | 总2页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDA669 Series
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
30A / 600 - 1000V
THREE PHASE BRIDGE
RECTIFIER ASSEMBLY
SDA669 __ _F_ __ __
Lead Bend 3/ __ = Straight Leads
UB = Up Bend
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
│
└
│
│
│
│
└
└
DB = Down Bend
Terminals 2/ 3/ _ = Copper Leads
Features:
• Up to 1000 V Blocking Voltage
• Average Output Current 30 Amps
• Low Reverse Leakage Current
• Constructed with Void-free, Hermetically Sealed Discretes
• Aluminum Case for Maximum Thermal Conductivity
• Small Package Size (1.500 x 0.875 x 0.310”)
• TX and TXV & S Level Screening Available
T = Turret Terminals
Speed
F = Fast (250 ns typ.)
Voltage J = 600 V
K = 800 V
M = 1000V
• Ultra Fast (70ns) versions available. Contact Factory
Maximum Ratings
Symbol
Value
Units
VRRM
VRSM
VR
600
800
1000
SDA669J
SDA669K
SDA669M
Volts
Peak Repetitive and Peak Surge Reverse Voltage
Average Rectified Forward Current 4/
(Resistive Load, 60 hz Sine Wave, TC = 55°C)
Io
30
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C, per leg)
IFSM
150
Amps
ºC
Top & Tstg
-55 to +150
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
2.0
ºC/W
RΘJC
1
SDA669 ( __ )
SDA669 (T)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RA0026D
DOC
SDA669 Series
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic 5/
Symbol
Min
Typ
Max
Units
Instantaneous Forward Voltage Drop
(TA = 25°C, 300 - 500 µsec pulse)
IF = 3A
IF = 9A
1.15
1.30
VF1
VF2
––
––
VDC
Reverse Leakage Current
(Rated VR, TA = 25ºC, 300 µsec pulse minimum)
––
––
––
––
––
5
µA
µA
IR1
IR2
tRR
Reverse Leakage Current
(Rated VR, TA = 100ºC, 300 µsec pulse minimum)
60
Reverse Recovery Time
(TA = 25°C, IF = 0.5A, IR = 1.0A, IRR = 0.25A)
250
325
nsec
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ For Package Outlines Contact Factory.
3/ Up and Down Bend Configurations are Available for ‘__’ ( Leaded ) Packages Only.
4/ Derate Linearly at 0.28A/ºC for TC > 55ºC.
5/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
Available Part Numbers:
SDA669JF; SDA669JFT
SDA669KF; SDA669KFT
SDA669MF; SDA669MFT
Mounting Diagram: 2/
相关型号：
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