SDR1210HBUFUBTX [SSDI]
12 AMP 1000 - 1200 VOLTS 75 nsec ULTRA FAST RECTIFIER; 12 AMP 1000至1200年伏75纳秒超快速整流器
| 型号： | SDR1210HBUFUBTX |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | 12 AMP 1000 - 1200 VOLTS 75 nsec ULTRA FAST RECTIFIER |
| 文件： | 总2页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR1210UF / SDR1212UF
SERIES
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
12 AMP
1000 - 1200 VOLTS
75 nsec
DESIGNER'S DATA SHEET
1/
Part Number /Ordering Information
ULTRA FAST RECTIFIER
SDR12 12 J UF UB TX
2/
Screening: _ = Not Screened
FEATURES:
TX = TX Level
• Ultra Fast Recovery: 75nsec Maximum
• High Surge Rating
• Low Reverse Leakage Current
• Low Junction Capacitance
• Hermetically Sealed Package
• Custom Lead Forming Available
• Eutectic Die Attach
TXV= TXV Level
S
Lead Bending:
_
= Space Level
3/ 4/
= Straight
UB = Up Bend
DB = Down Bend
3/
Package:
J
= TO-257
S.5 = SMD .5
• TX, TXV and S Level Screening Available
HB = SedPack I (Leadless)
HE = SepPack I (Leaded)
Voltage: 10 = 1000V
12 = 1200V
Maximum Ratings 3/
SYMBOL
VALUE
UNITS
Volts
Peak Repetitive Reverse and
DC Blocking Voltage
V
RRM
SDR1210
SDR1212
1000
1200
V
RWM
V
R
Average Rectified Forward Current.
(Resistive load, 60Hz, Sine Wave, TA = 25oC)
Io
12
Amps
Peak Surge Current
I
125
Amps
oC
(8.3 ms Pulse, Half Sine Wave, TA = 25oC)
FSM
Operating and Storage Temperature
TOP & Tstg
-65 TO +175
Maximum Thermal Resistance
Junction to Case
TO-257 (J)
SMD.5 (S.5)
SedPack I (HB & HE)
1.4
0.8
0.8
R
QJC
oC/W
TO-257 (J)
SMD.5 (S.5)
SedPack I (HB)
SedPack I (HE)
2
1
2
1
NOTE: All specifications are subject to change without notification.
DATA SHEET #: RC0066A
SCD's for these devices should be reviewed by SSDI prior to release.
SDR1210UF / SDR1212UF
SERIES
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
5/
SYMBOL
MIN
MAX
UNITS
Electrical Characteristics
Instantaneous Forward Voltage Drop
I = 8A
I = 12A
F
V
V
--
--
1.50
1.60
F
F1
VDC
(T = 25oC, 300 - 500msec Pulse )
A
F2
Instantaneous Forward Voltage Drop
(I = 8A, 300 - 500msec pulse )
F
T = -55oC
V
V
--
--
1.60
1.40
A
F3
VDC
mA
T = 100oC
A
F4
Reverse Leakage Current
T = 25oC
I
R1
--
--
30
500
A
(80% of Rated V , 300ms pulse min.)
T = 100oC
I
R2
R
A
Junction Capacitance
C
--
--
50
75
pF
J
(V = 10V , T = 25oC, f = 1MHz)
R
DC
A
Reverse Recovery Time
t
nsec
RR
(I = 0.5A, I = 1A, I = 0.25A, T = 25oC)
F
R
RR
A
NOTES:
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500.
3/ For Package Outlines Contact Factory.
4/ Up and Down Bend Configurations Available for M and Z (TO-254 and TO-254Z) Packages Only.
5/ All Electrical Characteristics @25oC, Unless Otherwise Specified.
PIN ASSIGNMENT
Available Part Numbers:
SDR1210JUF
SDR1212JUF
PACKAGE
TO-257 (J)
Pin 1
Pin 2
Anode
Anode
Anode
Anode
Pin 3
Anode
Anode
N/A
SDR1210JUFDB
SDR1210JUFUB
SDR1210S.5UF
SDR1210HBUF
SDR1210HEUF
SDR1212JUFDB
SDR1212JUFUB
SDR1212S.5UF
SDR1212HBUF
SDR1212HEUF
Cathode
Cathode
Cathode
Cathode
SMD.5 (S.5)
SedPack 1 (HB)
SedPack 1 (HE)
N/A
相关型号：
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SDR1210JUF
Rectifier Diode, 1 Phase, 2 Element, 12A, 1000V V(RRM), Silicon, TO-257, HERMETIC SEALED, TO-257, 3 PIN
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SDR1210JUFDB
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