SDR1SHF [SSDI]
HYPER FAST RECTIFIER; HYPER快速整流
| 型号： | SDR1SHF |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | HYPER FAST RECTIFIER |
| 文件： | 总2页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR1PHF thru SDR1WHF
and
SDR1PHFSMS and SDR1WHFSMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
1 AMP
HYPER FAST RECTIFIER
Part Number/Ordering Information 1/
SDR1 __ __ __ __
1300 ─ 1800 VOLTS
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
40 nsec
│
│
│
│
│
│
│
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│
│
│
│
└
│
│
│
│
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│
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└
│
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└
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FEATURES:
S = S Level
•
Hyper Fast Recovery: 40 ns Max @ 25°C 4/
Single Chip Construction
PIV to 1800 Volts
Low Reverse Leakage Current
Hermetically Sealed
For High Efficiency Applications
Available in Axial and Surface Mount
Versions
•
•
•
•
•
•
Package Type
__ = Axial Leaded
SMS = Surface Mount Square Tab
Reverse Recovery
HF = Hyper Fast
P = 1300 V T = 1600 V
R = 1400 V V = 1700 V
S = 1500 V W = 1800 V
Family/Voltage
•
•
Metallurgically Bonded
TX, TXV, and S-Level Screening Available2/
MAXIMUM RATINGS 3/
RATING
SYMBOL
VALUE
UNIT
SDR1PHF
SDR1RHF
SDR1SHF
SDR1THF
SDR1VHF
SDR1WHF
1300
1400
1500
1600
1700
1800
Peak Repetitive Reverse Voltage And
DC Blocking Voltage
VRRM
VRWM
VR
Volts
Rectified Forward Forward Current
(Resistive Load, 60 Hz, Sine Wave, TL = 25°C, L = 1/8”)
IO
1.0
Amp
Peak Surge Current
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach
equilibrium between pulses, TA = 25°C)
12
IFSM
Amps
-65 to +175
TOP and TSTG
Operating & Storage Temperature
°C
RθJL
RθJE
Thermal Resistance, Junction to Lead, L = 3/8” (Axial)
Junction to End Tab (SMS)
35
28
°C/W
NOTES:
Axial Lead
SMS
1/ For Ordering Information, Price, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on
Request.
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
4/ Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp, IRR to .25 Amp.
5/ For information on operating curves, contact factory.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0129A
DOC
SDR1PHF thru SDR1WHF
and
SDR1PHFSMS and SDR1WHFSMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
3/
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
SYMBOL VALUE
UNIT
Instantaneous Forward Voltage Drop
(IF = 1 Adc, 300- 500 μs Pulse, TA = 25°C)
VF1
VF2
IR1
IR2
CJ
trr
4.80
5.0
20
Vdc
Instantaneous Forward Voltage Drop
(IF = 1 Adc, 300- 500 μs Pulse, TA = -55°C)
Vdc
μA
μA
pf
Maximum Reverse Leakage Current
(Rated VR, 300 μs Pulse Minimum , TA = 25°C)
Maximum Reverse Leakage Current
(Rated VR, 300 μs Pulse Minimum , TA = 100°C)
200
20
Junction Capacitance
(VR = 100Vdc, TA = 25°C , f = 1MHz)
Maximum Reverse Recovery Time 4/
40
ns
DIMENSIONS
DIM. MIN. MAX.
DIMENSIONS
Axial Leaded Case Outline:
Square Tab Surface Mount Case
Outline:
DIM. MIN. MAX.
A
B
C
D
.100” .150”
.125” .200”
.027” .033”
A
B
C
D
.135” .155”
.175” .250”
.022” .028”
1.00”
---
.002”
---
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0129A
DOC
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