SDR2040UFBTR [SSDI]
Rectifier Diode, 1 Phase, 1 Element, 20A, 400V V(RRM), Silicon, HERMETIC SEALED PACKAGE-1;
| 型号： | SDR2040UFBTR |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 20A, 400V V(RRM), Silicon, HERMETIC SEALED PACKAGE-1 整流二极管 超快恢复二极管 快速恢复二极管 |
| 文件： | 总2页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR2030UF thru
SDR2060UF Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number / Ordering Information 1/
20 AMP
Ultra Fast Rectifier
300 - 600 Volts
45 nsec
SDR20 __ __ __ __
Screening2/
└
│
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
Features:
Replaces DO-4 and DO-5
Ultra Fast Recovery
Low Reverse Leakage Current
Hermetically Sealed Void-Free Construction3/
Monolithic Single Chip Construction
High Surge Rating
Package Type
= Axial
BT = Cathode Button
BTR = Anode Button
Reverse Recovery
UF = Ultra Fast
Low Thermal Resistance
Higher Voltages Available - Contact Factory
Replacement for MSARS20E060G
TX, TXV, and Space Level Screening Available
Voltage
30 = 300 V
40 = 400 V
50 = 500 V
60 = 600 V
MAXIMUM RATINGS
Symbol
Value
Units
Volts
SDR2030UFBT
SDR2040UFBT
SDR2050UFBT
SDR2060UFBT
300
400
500
600
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
Button @Tc ≤ 100°C
Axial @TL ≤ 55°C
20
10
Average Rectified Forward Current
(Resistive Load, 60Hz Sine Wave)
IO
Amps
Peak Surge Current
IFSM
300
Amps
oC
(8.3 ms Pulse, Half sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between
Pulses, TA=25oC)
Operating and Storage Temperature
Top & Tstg
-65 to +175
RJC
RJC
RJL
2.0
2.2
6.0
BT Button
BTR Button
Axial @ 0.25”
Maximum Thermal Resistance
oC/W
Notes:
Axial
Button
1/ For ordering information, price, operating curves, and availability,
contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on
request.
3/ PIND testing not required on void free devices per MIL-PRF-19500.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0146C
DOC
SDR2030UF thru
SDR2060UF Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS
(Ta = 25 oC unless specified)
Symbol Max
Unit
Instantaneous Forward Voltage Drop
1.25
1.40
1.65
2.05
1.70
1.45
5
VF1
VF2
VF3
VF4
VF5
VF4
IR1
V
IF = 5A pulsed
Instantaneous Forward Voltage Drop
IF = 10A pulsed
V
V
Instantaneous Forward Voltage Drop
IF = 20A pulsed
Instantaneous Forward Voltage Drop
V
IF = 20A pulsed TA = -55oC
Instantaneous Forward Voltage Drop
V
IF = 20A pulsed TA = 125oC
Instantaneous Forward Voltage Drop
V
IF = 10A pulsed TA = -55oC
Reverse Leakage Current
Rated VR, pulsed
A
A
Reverse Leakage Current
500
Rated
80
IR2
Rated VR, pulsed, TA = 125oC)
V
(min)
Minimum Breakdown Voltage
IR, = 100 A
BVR
CJ
Junction Capacitance
pF
(VR =10 VDC, f = 1MHz, TA = 25oC)
Reverse Recovery Time
45
trr
nsec
(IF = 0.5A, IR = 1.0 A, IRR = 0.25A, TA = 25oC)
CASE OUTLINES: Button
Dim
Min
0.150”
—
Max
A
A1
B
C
0.165”
0.020”
0.135”
0.190”
0.165”
0.210”
C1
P1
P2
P3
P4
T
0.280” REF
0.110”
0.055”
0.090”
0.065”
0.008”
0.130”
0.075”
0.110”
—
0.012”
R
0.015” REF
DIM
A
MIN
MAX
0.165”
0.180”
0.062”
0.135”
0.150”
0.057”
B
C
D
.500”
––
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0146C
DOC
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