SDR2060UFBT [SSDI]
Ultra Fast Rectifier; 超快速整流器
| 型号： | SDR2060UFBT |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Ultra Fast Rectifier |
| 文件： | 总2页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR2060UFBT
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
20 AMP
Ultra Fast Rectifier
600 Volt
Designer’s Data Sheet
Part Number / Ordering Information 1/
60 nsec
SDR20 __ __ __ __
Screening2/
└
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
│
└
│
│
│
│
│
└
Features:
__ = Not Screened
•
•
•
•
•
•
•
•
•
•
Replaces DO-4 and DO-5
Ultra Fast Recovery
Low Reverse Leakage Current
Hermetically Sealed Void-Free Construction3/
Monolithic Single Chip Construction
High Surge Rating
TX = TX Level
TXV = TXV
S = S Level
Package Type
BT = Button
Reverse Recovery
Low Thermal Resistance
UF = Ultra Fast
Higher Voltages Available - Contact Factory
Replacement for MSARS20E060G
TX, TXV, and Space Level Screening Available
Voltage
60 = 600 V
MAXIMUM RATINGS
Symbol
Value
Units
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
VRRM
VRWM
VR
Volts
600
Average Rectified Forward Current
IO
Amps
Amps
20
(Resistive Load, 60Hz Sine Wave, BT Tc≤100°C )
Peak Surge Current
IFSM
100
(8.3 ms Pulse, Half sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between
Pulses, TA=25oC)
Operating and Storage Temperature
Top & Tstg
RθJC
oC
-65 to +175
2.0
oC/W
Maximum Thermal Resistance
Junction to Case
Notes:
Button (BT)
1/ For ordering information, price, operating curves, and availability, contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ PIND testing not required on void free devices per MIL-PRF-19500.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0146A
DOC
SDR2060UFBT
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS
(Ta = 25 oC unless specified)
Symbol Max
Unit
V
Instantaneous Forward Voltage Drop
IF = 5A pulsed
VF1
VF2
VF3
VF4
VF5
VF4
IR1
1.25
1.40
1.65
2.05
1.70
1.45
5
Instantaneous Forward Voltage Drop
IF = 10A pulsed
V
Instantaneous Forward Voltage Drop
IF = 20A pulsed
V
Instantaneous Forward Voltage Drop
V
IF = 20A pulsed TA = -55oC
Instantaneous Forward Voltage Drop
V
IF = 20A pulsed TA = 125oC
Instantaneous Forward Voltage Drop
V
IF = 10A pulsed TA = -55oC
Reverse Leakage Current
Rated VR, pulsed
μA
μA
Reverse Leakage Current
IR2
200
600
80
Rated VR, pulsed, TA = 125oC)
V
(min)
Breakdown Volatge
IR, = 100 μA
BVR
CJ
Junction Capacitance
pF
(VR =10 VDC, f = 1MHz, TA = 25oC)
Reverse Recovery Time
trr
55
nsec
(IF = 0.5A, IR = 1.0 A, IRR = 0.25A, TA = 25oC)
CASE OUTLINES: Button (BT)
OPTIONAL TAB PROFILE
ØB
A
A1
Dim
A
Min
0.125
—
Max
0.150
0.020
0.190
0.210
A1
∅B
C
—
0.190
ØP1
C1
P1
P2
P4
T
0.280 REF
C1
0.145
0.055
0.155
0.075
C
P4
P2
0.060 REF
0.008
0.012
R
0.015 REF
T
2x R
P3
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0146A
DOC
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