SDR30U080 [SSDI]

Ultra Fast Recovery Rectifier; 超快恢复整流器
SDR30U080
型号: SDR30U080
厂家: SOLID STATES DEVICES, INC    SOLID STATES DEVICES, INC
描述:

Ultra Fast Recovery Rectifier
超快恢复整流器

文件: 总2页 (文件大小:87K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SDR30U080J thru SDR30U120J  
and  
SDR40U080M thru SDR40U120M  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
DESIGNER’S DATA SHEET  
30/40 AMP  
Ultra Fast Recovery  
Rectifier  
Part Number / Ordering Information 1/  
__ __ __ __  
SDR55  
Screening 2/  
800 - 1200 Volts  
50 nsec  
__ = Not Screened  
TX = TX Level  
TXV = TXV Level  
S = S Level  
Features:  
Ultra Fast Recovery: 40 nsec typical  
High Surge Rating  
Low Reverse Leakage Current  
Low Forward Voltage Drop  
Package Type  
J = TO-257  
M = TO-254  
Voltage/Family  
80 = 800V  
90 = 900V  
100 = 1000V  
110= 1100V  
120 = 1200V  
Low Junction Capacitance  
Hermetically Sealed Package  
Gold Eutectic Die Attach available  
Ultrasonic Aluminum Wire Bonds  
Ceramic Seals for improved hermeticity available  
TX, TXV, Space Level Screening Available Consult  
Factory.2/  
Recovery Time  
UF = Ultra Fast  
Maximum Ratings  
Symbol  
VRRM  
Value  
Units  
Volts  
Peak Repetitive Reverse and  
DC Blocking Voltage  
SDR30U080/SDR40U080  
SDR30U090/SDR40U090  
SDR30U100/SDR40U100  
SDR30U110/SDR40U110  
SDR30U120/SDR40U120  
800  
900  
1000  
1100  
1200  
VRWM  
VR  
TO-257  
TO-254  
30  
40  
Average Rectified Forward Current  
Io  
Amps  
Amps  
(Resistive Load, 60 Hz Sine Wave, TA = 25ºC)3/  
Peak Surge Current  
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to  
IFSM  
250  
Reach Equilibrium Between Pulses, TA = 25ºC)3/  
Operating & Storage Temperature  
Top & Tstg  
RθJE  
ºC  
-65 to +200  
1.25  
Maximum Thermal Resistance  
ºC/W  
Junction to End Tab3/  
TO-254 (M)  
TO-257 (J)  
1/ For ordering information, price, operating curves, and availability - Contact  
factory.  
2/ Screening based on MIL-PRF-19500. Screening flows available on request.  
3/ Pins 2 & 3 connected.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RC0143A  
DOC  
SDR30U080J thru SDR30U120J  
and  
SDR40U080M thru SDR40U120M  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
Electrical Characteristics  
Symbol  
Typ  
Max  
Units  
IF = 5Adc  
IF = 10Adc  
IF = 20Adc  
IF = 30Adc  
IF = 50Adc  
IF = 5Adc  
1.65  
1.73  
1.85  
1.92  
2.1  
--  
1.9  
2.1  
2.2  
2.5  
--  
Instantaneous Forward Voltage Drop  
(TA = 25ºC, 300 μsec pulse)  
VF1  
Volts  
1.7  
IF = 10Adc  
IF = 20Adc  
IF = 30Adc  
IF = 50Adc  
IF = 5Adc  
IF = 10Adc  
IF = 20Adc  
IF = 30Adc  
IF = 50Adc  
1.75  
1.85  
1.92  
2.05  
1.12  
1.3  
1.52  
1.65  
1.88  
1.95  
2.1  
2.2  
2.5  
--  
1.6  
1.8  
2.0  
2.35  
Instantaneous Forward Voltage Drop  
(TA = -55ºC, 300 μsec pulse)  
VF2  
Volts  
Volts  
Instantaneous Forward Voltage Drop  
(TA = 125ºC, 300 μsec pulse)  
VF3  
Reverse Leakage Current  
(Rated VR, TA = 25ºC, 300 μsec pulse minimum)  
IR1  
20  
100  
μA  
Reverse Leakage Current  
1.5  
5
15  
--  
20  
--  
(Rated VR, TA = 100ºC, 300 μsec pulse minimum)  
(Rated VR, TA = 125ºC, 300 μsec pulse minimum)  
(Rated VR, TA = 150ºC, 300 μsec pulse minimum)  
Junction Capacitance  
(VR = 5 Vdc, TA = 25ºC, f = 1MHz)  
(VR = 10 Vdc, TA = 25ºC, f = 1MHz)  
Reverse Recovery Time  
(IF = 500 mA, IR = 1A, IRR = 0.25A)  
(IF = 500 mA, IR = 1A, IRR = 0.25A)  
(IF = 10 A, dIF /dt = 100A/us)  
(IF = 10 A, dIF /dt = 100A/us)  
(IF = 10 A, dIF /dt = 100A/us)  
IR2  
mA  
50  
45  
--  
75  
CJ  
pF  
trr1  
trr2  
trr3  
IRM3  
trr4  
IRM4  
nsec  
nsec  
nsec  
A
nsec  
A
TA = 25ºC  
TA = 100ºC  
TA = 25ºC  
TA = 25ºC  
TA = 100ºC  
TA = 100ºC  
35  
100  
50  
3.7  
110  
6
50  
--  
--  
--  
--  
--  
(IF = 10 A, dIF /dt = 100A/us)  
Pin1: Cathode  
Pin2: Anode  
Pin3: Anode  
Pin1: Cathode  
Pin2: Anode  
Pin3: Anode  
Case Outline: TO-254  
Case Outline: TO-257  
Note 1: Pin 2&3 connected together  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RC0143A  
DOC  

相关型号:

SDR30U080J

Ultra Fast Recovery Rectifier
SSDI

SDR30U080JS

Rectifier Diode, 1 Phase, 1 Element, 30A, 800V V(RRM), Silicon, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN
SSDI

SDR30U080JTX

Rectifier Diode, 1 Phase, 1 Element, 30A, 800V V(RRM), Silicon, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN
SSDI

SDR30U080JTXV

Rectifier Diode, 1 Phase, 1 Element, 30A, 800V V(RRM), Silicon, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN
SSDI

SDR30U090

Ultra Fast Recovery Rectifier
SSDI

SDR30U100

Ultra Fast Recovery Rectifier
SSDI

SDR30U100J

Rectifier Diode, 1 Phase, 1 Element, 30A, 1000V V(RRM), Silicon, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN
SSDI

SDR30U100JS

Rectifier Diode, 1 Phase, 1 Element, 30A, 1000V V(RRM), Silicon, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN
SSDI

SDR30U100JTXV

Rectifier Diode, 1 Phase, 1 Element, 30A, 1000V V(RRM), Silicon, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN
SSDI

SDR30U110

Ultra Fast Recovery Rectifier
SSDI

SDR30U110M

Rectifier Diode, 1 Phase, 1 Element, 40A, 1100V V(RRM), Silicon, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN
SSDI

SDR30U110MS

Rectifier Diode, 1 Phase, 1 Element, 40A, 1100V V(RRM), Silicon, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN
SSDI