SDR3A-CHIP [SSDI]
Diode,;型号: | SDR3A-CHIP |
厂家: | SOLID STATES DEVICES, INC |
描述: | Diode, 整流二极管 功效 |
文件: | 总2页 (文件大小:150K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SDR3A and SDR3ASMS
thru
SDR3N and SDR3NSMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
3.0 AMPS
Designer’s Data Sheet
Part Number/Ordering Information 1/
__ __ __
50 ─ 1200 VOLTS
50 – 80 nsec ULTRA FAST RECTIFIER
SDR3
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
└
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
└
FEATURES:
•
Ultra Fast Recovery:
50-80 ns Max @ 25ºC 4/
85-125 ns Max @ 100ºC4/
•
•
•
•
•
•
•
•
Single Chip Construction
PIV to 1200 Volts
Low Reverse Leakage Current
Hermetically Sealed
S = S Level
Package Type
__ = Axial Leaded
SMS = Surface Mount Square Tab
For High Efficiency Applications
Available in Axial and Surface Mount Versions
Metallurgically Bonded
A = 50 V
B = 100V
D = 200V
G = 400V
J = 600V
K = 800V
M = 1000V
N = 1200V
Family
TX, TXV, and S-Level Screening Available 2/
MAXIMUM RATINGS 3/
RATING
SYMBOL
VALUE
UNIT
SDR3A and SDR3ASMS
SDR3B and SDR3BSMS
SDR3D and SDR3DSMS
SDR3G and SDR3GSMS
SDR3J and SDR3JSMS
SDR3K and SDR3KSMS
SDR3M and SDR3MSMS
SDR3N and SDR3NSMS
50
100
200
400
600
800
1000
1200
Peak Repetitive Reverse
Voltage
VRRM
VRWM
VR
Volts
And
DC Blocking Voltage
Rectified Forward Forward Current
(Resistive Load, 60 Hz, Sine Wave, TA = 25°C)
3
Amp
IO
Peak Surge Current
75
Amps
IFSM
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach
equilibrium between pulses, TA = 25°C)
-65 to +175
Operating & Storage Temperature
°C
T
OP and TSTG
Thermal Resistance, Junction to Lead, L = 3/8”
Junction to End Tab
RθJL
RθJE
20
14
°C/W
NOTES:
SMS
Axial Leaded
1/ For Ordering Information, Price, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
4/ Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp, IRR to .25 Amp.
5/ For information on operating curves, contact factory.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0013G
DOC
SDR3A and SDR3ASMS
thru
SDR3N and SDR3NSMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
3/
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
SYMBOL VALUE UNIT
Instantaneous Forward Voltage Drop
(IF = 3Adc, 300- 500 μs Pulse, TA = 25°C)
SDR3A thru SDR3J
SDR3K thru SDR3N
1.35
1.90
VF1
VF2
IR1
IR2
CJ
Vdc
Vdc
μA
μA
pf
Instantaneous Forward Voltage Drop
(IF = 3Adc, 300- 500 μs Pulse, TA = -55°C)
SDR3A thru SDR3J
SDR3K thru SDR3N
1.50
2.10
Maximum Reverse Leakage Current
(Rated VR, 300 μs Pulse Minimum , TA = 25°C)
5
Maximum Reverse Leakage Current
(Rated VR, 300 μs Pulse Minimum , TA = 100°C)
500
50
Junction Capacitance
(VR = 10Vdc, TA = 25°C , f = 1MHz)
SDR3A thru SDR3J
SDR3K
50
60
70
80
Maximum Reverse Recovery Time 4/
trr
ns
SDR3M
SDR3N
DIMENSIONS
DIM. MIN. MAX.
DIMENSIONS
Axial Leaded Case Outline 5/:
Square Tab Surface Mount Case
Outline 5/:
DIM. MIN. MAX.
A
B
C
D
.120” .180”
--- .230”
.047” .053”
1.00” ---
A
B
C
D
.172” .180”
.180” .280”
.022” .028”
.002”
---
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0013G
DOC
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