SDR3MS [SSDI]
3AMP 800 - 1200V 35nsec Hyper Fast Rectifier; 3AMP 800 - 1200V 35nsec超快速整流器
| 型号： | SDR3MS |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | 3AMP 800 - 1200V 35nsec Hyper Fast Rectifier |
| 文件： | 总2页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR3KHF & SDR3KHFSMS
thru
SDR3NHF & SDR3NHFSMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number/Ordering Information 1/
3 AMP
800 - 1200 V
35 nsec
SDR3
HF
___
│
___ ___
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
│
│
│
│
│
└
└
│
│
│
│
│
│
└
Hyper Fast Rectifier
S = S Level
Package Type
___ = Axial
SMS = Surface Mount Square Tab
Features:
• Hyper Fast Recovery: 35 nsec maximum
• PIV to 1200 Volts
• Hermetically Sealed
Family/Voltage
K = 800 V
M = 1000 V
N = 1200 V
• Void Free Construction
• For High Efficiency Applications
• Single Chip Construction
• Low Reverse Leakage
• TX, TXV, S Level screening Available2/
Maximum Ratings
Symbol
Value
Units
Volts
Amps
Peak Repetitive Reverse and DC Blocking Voltage
SDR3KHF
SDR3MHF
SDR3NHF
VRRM
VRSM
VR
800
1000
1200
Average Rectified Forward Current
(Resistive Load, 60 hz Sine Wave, TL = 25 °C)
Io
3.0
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TL = 25 °C)
IFSM
OP & TSTG
RθJE
70
Amps
ºC
Operating & Storage Temperature
T
-65 to +175
16
12
Maximum Thermal Resistance
Junction to Leads, L = 1/4"
Junction to Tabs
ºC/W
1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flow Available on Request.
Axial Lead Diode
SMS
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0097B
DOC
SDR3DHF & SDR3DHFSMS
thru
SDR3NHF & SDR3NHFSMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic
Symbol
Max
Units
VDC
VDC
µA
Instantaneous Forward Voltage Drop
(TA = 25ºC, pulsed)
IF = 1A
IF = 3A
1.9
3.1
VF1
VF2
Instantaneous Forward Voltage Drop
(TA = -55ºC, pulsed)
IF = 1A
IF = 3A
2.0
3.2
VF3
VF4
Reverse Leakage Current
(Rated VR, TA = 25ºC, pulsed)
IR1
IR2
10
Reverse Leakage Current
(Rated VR, TA = 100ºC, pulsed)
300
µA
Reverse Recovery Time
(IF = 500mA, IR = 1A, IRR = 250mA, TA =
25ºC)
Junction Capacitance
(VR = 10VDC, f = 1MHz, TA = 25ºC)
tRR
CJ
35
30
nsec
pF
DIM
MIN
MAX
0.165”
0.220”
0.053”
––
Case Outline: (Axial)
A
B
C
D
––
––
0.047”
0.950”
DIM
A
MIN
MAX
0.180”
0.280”
0.028”
--
Case Outline: (SMS)
0.172”
0.180”
0.022”
0.002”
B
C
D
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0097B
DOC
相关型号：
SDR3NHFS
Rectifier Diode, 1 Phase, 1 Element, 3A, 1200V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
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SDR3NHFSMSS
Rectifier Diode, 1 Phase, 1 Element, 3A, 1200V V(RRM), Silicon, HERMETIC SEALED, SMS, 2 PIN
SSDI
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