SDR4MTXV [SSDI]
Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2;
| 型号： | SDR4MTXV |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 |
| 文件： | 总2页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR4G - SDR4N
and
SDR4GSMS – SDR4NSMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
3 AMP
400 – 1200 Volts
__ __ __
SDR4
50-80 nsec
L Screening2/ = None
⏐
⏐
⏐
⏐
⏐
⏐
⏐
⏐
⏐
⏐
⏐
ULTRA FAST RECTIFIER
TX = TX Level
TXV = TXV Level
S = S Level
Package
Features:
L
___ = Axial
SMS = Surface Mount Square Tab
• Ultra Fast Recovery: 50-80 nsec Max. @ 25°C
85-125 nsec Max. @ 100°C
• Single Chip Construction
Voltage
L
G = 400 V
• PIV to 1200 Volts
J = 600 V
K = 800 V
M = 1000 V
N = 1200 V
• Low Reverse Leakage Current
• Hermetically Sealed
• For High Efficiency Applications
• Available in Axial Leaded & Surface Mount versions
• Metallurgically Bonded
• TX, TXV, and S-Level Screening Available2/
Maximum Ratings
Symbol
Value
Units
400
600
800
1000
1200
Peak Repetitive Reverse and
DC Blocking Voltage
SDR4G
SDR4J
SDR4K
SDR4M
SDR4N
VRRM
VRWM
VR
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25ºC)
3
Io
Amps
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to
Reach Equilibrium Between Pulses, TA = 25ºC)
75
IFSM
-65 to +175
Operating & Storage Temperature
Top & Tstg
ºC
Junction to Lead, L = 3/8 "
Maximum Thermal Resistance
20
14
RθJL
RθJE
ºC/W
Junction to End Tab
Notes:
Axial Leaded
SMS (Square)
1/ For Ordering Information, Price, Operating Curves, and
Availability – Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows
Available on Request.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0015B
DOC
SDR4G - SDR4N
and
SDR4GSMS – SDR4NSMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics
Part Type Symbol
Max
Units
Vdc
Vdc
μA
SDR2G – J
VF
1.9
2.1
Instantaneous Forward Voltage Drop
(IF = 3 Adc, TA = 25ºC, 300 µs pulse)
SDR2K – N
SDR2G – J
VF
2.1
2.3
Instantaneous Forward Voltage Drop
(IF = 3 Adc, TA = -55ºC, 300 µs pulse)
SDR2K – N
Reverse Leakage Current
(Rated VR, TA = 25ºC, 300 µs pulse minimum)
5
IR
IR
Reverse Leakage Current
(Rated VR, TA = 100ºC, 300 µs pulse minimum)
0.5
40
μA
Junction Capacitance
(VR = 10 Vdc, TA = 25ºC, f = 1MHz)
CJ
pF
50
60
70
80
SDR2G – J
SRS1K
SRS1M
SRS1N
Reverse Recovery Time
(IF = 500 mA, IR = 1A, IRR = 0.25A, TA = 25ºC)
trr
nsec
Case Outline: (Axial)
DIMENSIONS
ØC
ØA
D
B
D
DIM
MIN
.120”
.130”
.047”
1.00”
MAX
.180”
.230”
.053”
---
A
B
C
D
Case Outline: Surface Mount (SMS)
B
A
DIMENSIONS
DIM
A
B
C
D
MIN
MAX
A
0.172”
0.180”
0.022”
0.002”
0.180”
0.280”
0.028”
––
D
C
Dimensions prior to solder dipping
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0015B
DOC
相关型号：
SDR4NS
Rectifier Diode, 1 Phase, 1 Element, 3A, 1200V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
SSDI
SDR4NSMSS
Rectifier Diode, 1 Phase, 1 Element, 3A, 1200V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
SSDI
SDR4NSMSTXV
Rectifier Diode, 1 Phase, 1 Element, 3A, 1200V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
SSDI
SDR4NTX
Rectifier Diode, 1 Phase, 1 Element, 3A, 1200V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
SSDI
©2020 ICPDF网 联系我们和版权申明