SDR528SMS [SSDI]
3 AMPS 600 - 900 VOLTS 35 nsec HYPER FAST RECTIFIER; 3安培600 - 900伏35纳秒HYPER快速整流
| 型号： | SDR528SMS |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | 3 AMPS 600 - 900 VOLTS 35 nsec HYPER FAST RECTIFIER |
| 文件： | 总2页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR526 thru SDR529
SDR526SMS thru SDR529SMS
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
3 AMPS
600 – 900 VOLTS
35 nsec
Designer’s Data Sheet
FEATURES:
Hyper Fast Recovery: 35 nsec maximum
PIV up to 900 Volts
Avalanche Breakdown
Hermetically Sealed
For High Efficiency High Voltage Applications
Single Chip Construction
Metallurgically Bonded
·
·
·
·
·
·
·
·
HYPER FAST
RECTIFIER
Axial
Surface Mount
Square Tab (SMS)
TX, TXV, and Space Level Screening Available
MAXIMUM RATINGS
Symbol
Value
Units
Peak Repetitive Reverse Voltage and
DC Blocking Voltage @ 50µA
SDR526
SDR527
SDR528
SDR529
600
700
800
900
VRRM
VRWM
VR
Volts
Average Rectified Forward Current
IO
3
Amps
(Resistive Load, 60 Hz, Sine Wave, TA=25oC)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, Superimposed on IO, allow junction to
IFSM
75
Amps
oC
reach equilibrium between pulses, TA=25oC)
Operating and Storage Temperature
TOP & Tstg
-65 to +175
Maximum Thermal Resistance
Junction to Lead, L = 0.125” (Axial Lead)
Junction to End Tab (Surface Mount)
RqJL
RqJE
20
10
oC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0049D
DOC
SDR526 thru SDR529
SDR526SMS thru SDR529SMS
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS
Symbol
Min
Max
Unit
TA = 25oC
TA = -55oC
VF1
VF2
––
––
2.50
2.50
Volts
Volts
Instantaneous Forward Voltage Drop
(IF = 3 ADC, 300 - 500msec Pulse)
TA = 25oC
IR1
IR2
––
––
50
250
Reverse Leakage Current
(Rated VR, 300msec minimum pulse)
mA
mA
TA = 100oC
Junction Capacitance
––
––
CJ
trr
50
35
pF
ns
(VR = 10 VDC, TA = 25oC, f = 1 MHz)
Reverse Recovery Time
(IF = 500 mA, IR = 1 A, IRR = 250 mA, TA = 25oC)
DIM
MIN
MAX
Case Outline: (Axial)
A
B
C
D
0.140”
0.170”
0.046”
1.00”
0.180”
0.230”
0.053”
––
DIM
MIN
MAX
Case Outline: (SMS)
A
B
C
D
0.170”
0.220”
0.020”
0.002”
0.180”
0.280”
0.030”
––
Note: Dimensions prior to soldering.
NOTES:
Consult manufacturing for operating curves.
相关型号：
SDR528SMSS
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, HERMETIC SEALED, SMS, 2 PIN
SSDI
SDR528SMSTX
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, HERMETIC SEALED, SMS, 2 PIN
SSDI
SDR528SMSTXV
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, HERMETIC SEALED, SMS, 2 PIN
SSDI
SDR528TX
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
SSDI
SDR529S
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 900V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
SSDI
SDR529SMSS
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 900V V(RRM), Silicon, HERMETIC SEALED, SMS, 2 PIN
SSDI
SDR529SMSTX
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 900V V(RRM), Silicon, HERMETIC SEALED, SMS, 2 PIN
SSDI
SDR529SMSTXV
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 900V V(RRM), Silicon, HERMETIC SEALED, SMS, 2 PIN
SSDI
SDR529TX
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 900V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
SSDI
©2020 ICPDF网 联系我们和版权申明