SDR55U100CTPTXV [SSDI]
暂无描述;型号: | SDR55U100CTPTXV |
厂家: | SOLID STATES DEVICES, INC |
描述: | 暂无描述 |
文件: | 总3页 (文件大小:106K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SDR55U080CT thru
Solid State Devices, Inc.
SDR55U120CT Series
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
55 AMP
ULTRA FAST CENTERTAP
RECTIFIER
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SDR55U
___ ___ ___ ___
800 - 1200 Volts
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
│
│
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
│
│
└
│
│
│
│
└
└
50 nsec
Features:
Package Type
M = TO-254
N = TO-258
Ultra Fast Recovery: 35 nsec typical
High Surge Rating
Low Reverse Leakage Current
Low Forward Voltage Drop
Low Junction Capacitance
Hermetically Sealed Package
Gold Eutectic Die Attach available
Ultrasonic Aluminum Wire Bonds
Ceramic Seals for improved hermeticity available
Available in Centertap and Doubler versions
TX, TXV, Space Level Screening Available Consult
Factory.
P = TO-259
Configuration
CT = Common Cathode
CA = Common Anode
D = Doubler
DR = Doubler Reverse
Voltage/Family
080 = 800V
090 = 900V
100 = 1000V
110 = 1100V
120 = 1200V
Maximum Ratings
Symbol
VRRM
Value
Units
Volts
Peak Repetitive Reverse and
DC Blocking Voltage
SDR55U080
SDR55U090
SDR55U100
SDR55U110
SDR55U120
800
900
1000
1100
1200
VRWM
VR
Average Rectified Forward Current
Io
55
Amps
(Resistive Load, 60 Hz Sine Wave, TA = 25ºC)3/4/
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, Allow Junction to Reach Equilibrium
Between Pulses, TA = 25ºC)
IFSM
Top & Tstg
RθJE
250
Amps
ºC
Operating & Storage Temperature
-65 to +200
Maximum Thermal Resistance
Junction to Case, each individual diode
Junction to Case3/
1.25
1.0
ºC/W
TO-254 (M)
1/ For ordering information, price, operating curves, and
availability - Contact factory.
TO-258 (N)
TO-259 (P)
2/ Screening based on MIL-PRF-19500. Screening
flows available on request.
3/ Both legs tied together.
4/ Package limited.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0119D
DOC
SDR55U080CT thru
SDR55U120CT Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics (per leg)
Symbol
VF1
Typ
Max
Units
Volts
IF = 10Adc
IF = 20Adc
IF = 50Adc
IF = 10Adc
IF = 20Adc
IF = 50Adc
IF = 10Adc
IF = 20Adc
IF = 50Adc
1.75
1.85
2.1
1.75
1.85
2.05
1.3
1.9
2.1
2.5
1.95
2.1
2.5
1.6
1.8
2.35
Instantaneous Forward Voltage Drop
(TA = 25ºC, 300 sec pulse)
Instantaneous Forward Voltage Drop
(TA = -55ºC, 300 sec pulse)
VF2
VF3
Volts
Volts
Instantaneous Forward Voltage Drop
(TA = 125ºC, 300 sec pulse)
1.52
1.88
Reverse Leakage Current
(Rated VR, TA = 25ºC, 300 sec pulse minimum)
Reverse Leakage Current
(Rated VR, TA = 100ºC, 300 sec pulse minimum)
Reverse Leakage Current
(Rated VR, TA = 125ºC, 300 sec pulse minimum)
Reverse Leakage Current
(Rated VR, TA = 150ºC, 300 sec pulse minimum)
Junction Capacitance
(VR = 5 Vdc, TA = 25ºC, f = 1MHz)
(VR = 10 Vdc, TA = 25ºC, f = 1MHz)
Reverse Recovery Time
IR1
IR2
IR3
IR4
20
1.5
5
100
––
A
mA
mA
mA
20
15
––
50
45
––
75
CJ
pF
(IF = 500 mA, IR = 1A, IRR = 0.25A)
(IF = 500 mA, IR = 1A, IRR = 0.25A)
(IF = 10 A, dIF / dt = 100A/s)
(IF = 10 A, dIF / dt = 100A/s)
(IF = 10 A, dIF / dt = 100A/s)
(IF = 10 A, dIF / dt = 100A/s)
TA = 25ºC
TA = 100ºC
TA = 25ºC
TA = 25ºC
TA = 100ºC
TA = 100ºC
trr1
trr2
trr3
IRM3
trr4
IRM4
35
100
50
3.7
110
6
50
--
--
--
--
nsec
--
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0119D
DOC
SDR55U080CT thru
SDR55U120CT Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Case Outline: TO-254
Case Outline: TO-258
Case Outline: TO-259
PIN ASSIGNMENT
Code
CT
Function
Pin 1
Pin 2
Pin 3
Common
Cathode
Anode
Cathode
Anode
Anode
Common
Anode
CA
D
Cathode
Cathode
Anode
Cathode
Anode
Anode /
Cathode
Doubler
Doubler
Reverse
Cathode
/ Anode
DR
Cathode
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0119D
DOC
相关型号:
SDR55U100DM
Rectifier Diode, 1 Phase, 2 Element, 55A, 1000V V(RRM), Silicon, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN
SSDI
SDR55U100DMTX
Rectifier Diode, 1 Phase, 2 Element, 55A, 1000V V(RRM), Silicon, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN
SSDI
SDR55U100DNTX
Rectifier Diode, 1 Phase, 2 Element, 55A, 1000V V(RRM), Silicon, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN
SSDI
SDR55U100DNTXV
Rectifier Diode, 1 Phase, 2 Element, 55A, 1000V V(RRM), Silicon, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN
SSDI
SDR55U100DP
Rectifier Diode, 1 Phase, 2 Element, 55A, 1000V V(RRM), Silicon, TO-259, HERMETIC SEALED PACKAGE-3
SSDI
SDR55U100DPTXV
Rectifier Diode, 1 Phase, 2 Element, 55A, 1000V V(RRM), Silicon, TO-259, HERMETIC SEALED PACKAGE-3
SSDI
SDR55U100DRMTX
Rectifier Diode, 1 Phase, 2 Element, 55A, 1000V V(RRM), Silicon, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN
SSDI
SDR55U100DRN
Rectifier Diode, 1 Phase, 2 Element, 55A, 1000V V(RRM), Silicon, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN
SSDI
SDR55U100DRNTXV
Rectifier Diode, 1 Phase, 2 Element, 55A, 1000V V(RRM), Silicon, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN
SSDI
SDR55U100DRP
Rectifier Diode, 1 Phase, 2 Element, 55A, 1000V V(RRM), Silicon, TO-259, HERMETIC SEALED PACKAGE-3
SSDI
SDR55U100DRPS
Rectifier Diode, 1 Phase, 2 Element, 55A, 1000V V(RRM), Silicon, TO-259, HERMETIC SEALED PACKAGE-3
SSDI
SDR55U100DRPTX
Rectifier Diode, 1 Phase, 2 Element, 55A, 1000V V(RRM), Silicon, TO-259, HERMETIC SEALED PACKAGE-3
SSDI
©2020 ICPDF网 联系我们和版权申明