SDR60U120PTX [SSDI]
Rectifier Diode, 1 Phase, 1 Element, 60A, 1200V V(RRM), Silicon, TO-259, HERMETIC SEALED PACKAGE-3;
| 型号： | SDR60U120PTX |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 60A, 1200V V(RRM), Silicon, TO-259, HERMETIC SEALED PACKAGE-3 超快恢复二极管 快速恢复二极管 局域网 |
| 文件： | 总2页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR60U080N thru SDR60U120N
and
SDR60U080P thru SDR60U120P
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
60 AMP
Low VF
Part Number / Ordering Information 1/
Ultra Fast Recovery
Rectifier
__ __ __ __
SDR60
Screening 2/
│
│
│
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
│
│
└
│
│
│
│
└
└
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
800 -1200 Volts
50 nsec
Package Type
N = TO-258
P = TO-259
Features:
• Ultra Fast Recovery: 45 nsec typical
• High Surge Rating
Voltage/Family
080 = 800V
090 = 900V
100 = 1000V
110 = 1100V
120 = 1200V
• Low Reverse Leakage Current
• Low Forward Voltage Drop
• Low Junction Capacitance
• Hermetically Sealed Package
• Gold Eutectic Die Attach available
• Ultrasonic Aluminum Wire Bonds
• Ceramic Seals for improved hermeticity available
• TX, TXV, Space Level Screening Available Consult
Factory.2/
Recovery Time
U = Ultra Fast
Maximum Ratings
Symbol
VRRM
Value
Units
Volts
Peak Repetitive Reverse and
DC Blocking Voltage
SDR60U080
SDR60U090
SDR60U100
SDR60U110
SDR60U120
800
900
1000
1100
1200
VRWM
VR
Average Rectified Forward Current
Io
Amps
Amps
60
(Resistive Load, 60 Hz Sine Wave, TA = 25ºC)3/4/
Peak Surge Current
IFSM
(8.3 ms Pulse, Half Sine Wave, Allow Junction to Reach Equilibrium
500
Between Pulses, TA = 25ºC) 3/4/
Operating & Storage Temperature
Top & Tstg
RθJE
ºC
-65 to +200
0.75
Maximum Thermal Resistance
ºC/W
Junction to End Tab3/
TO-258 (N)
TO-259 (P)
1/ For ordering information, price, operating curves, and availability - Contact
factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Pins 2 & 3 connected.
4/ Limited by wirebonding
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0144A
DOC
SDR60U080N thru SDR60U120N
and
SDR60U080P thru SDR60U120P
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics
Symbol
Typ
1.7
Max
1.9
2.0
2.5
--
2.1
--
1.4
1.7
--
Units
IF = 20Adc
IF = 50Adc
IF = 100Adc
IF = 20Adc
IF = 50Adc
IF = 100Adc
IF = 20Adc
IF = 50Adc
IF = 100Adc
Instantaneous Forward Voltage Drop
(TA = 25ºC, 300 μsec pulse)
VF1
Volts
1.85
1.98
1.75
1.85
1.98
1.14
1.45
1.7
Instantaneous Forward Voltage Drop
(TA = -55ºC, 300 μsec pulse)
VF2
Volts
Instantaneous Forward Voltage Drop
(TA = 125ºC, 300 μsec pulse)
VF3
Volts
Reverse Leakage Current
(Rated VR, TA = 25ºC, 300 μsec pulse minimum)
IR1
75
500
μA
Reverse Leakage Current
5
20
50
--
150
--
(Rated VR, TA = 100ºC, 300 μsec pulse minimum)
(Rated VR, TA = 125ºC, 300 μsec pulse minimum)
(Rated VR, TA = 150ºC, 300 μsec pulse minimum)
Junction Capacitance
(VR = 5 Vdc, TA = 25ºC, f = 1MHz)
(VR = 10 Vdc, TA = 25ºC, f = 1MHz)
IR2
mA
pF
200
175
--
300
CJ
Reverse Recovery Time
(IF = 500 mA, IR = 1A, IRR = 0.25A)
(IF = 500 mA, IR = 1A, IRR = 0.25A)
(IF = 10 A, dIF /dt = 100A/us)
(IF = 10 A, dIF /dt = 100A/us)
(IF = 10 A, dIF /dt = 100A/us)
(IF = 10 A, dIF /dt = 100A/us)
trr1
trr2
trr3
IRM3
trr4
nsec
nsec
nsec
A
nsec
A
TA = 25ºC
TA = 100ºC
TA = 25ºC
TA = 25ºC
TA = 100ºC
TA = 100ºC
45
150
75
5
150
10
50
--
--
--
--
IRM4
--
Case Outline: TO-258
Case Outline: TO-259
Note 1: Pin 2&3 connected together
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0144A
DOC
相关型号：
SDR60U120PTXV
Rectifier Diode, 1 Phase, 1 Element, 60A, 1200V V(RRM), Silicon, TO-259, HERMETIC SEALED PACKAGE-3
SSDI
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