SDR626DMUTX [SSDI]
Rectifier Diode, 40A, 600V V(RRM),;
| 型号： | SDR626DMUTX |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, 40A, 600V V(RRM), |
| 文件： | 总2页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR623CTM & Z
Thru
SDR626DRM & Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
40A 35nsec 300-600 V
Hyper Fast Centertap Rectifier
Part Number/Ordering Information 1/
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SDR62
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Screening 2/ __ = Not Screened
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TX = TX Level
TXV = TXV Level
S = S Level
Features:
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Hyper Fast Recovery: 35nsec Maximum 3/
High Surge Rating
Low Reverse Leakage Current
Low Junction Capacitance
Hermetically Sealed Package
Gold Eutectic Die Attach
Leg Bend Option
(See Figure 1)
Package M = TO-254, Z = TO-254Z
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Configuration CT = Common Cathode,
CA = Common Anode, D = Doubler,
Ultrasonic Aluminum Wire Bonds
+
Available in Common Anode, Common Cathode,
Doubler, and Doubler Reverse Configurations
Ceramic Seal for Improved Hermeticity Available
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DR = Doubler Reverse
Voltage 3 = 300V, 4 = 400V, 5 = 500V, 6 = 600V
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TX, TXV, and S-Level Screening Available 2/
Maximum Ratings
Symbol
Value
Units
300
400
500
600
SDR623__M & Z
SDR624__M & Z
SDR625__M & Z
SDR626__M & Z
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Volts
Average Rectified Forward Current
40
Io
Amps
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C) 4/
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C)
200
IFSM
Amps
ºC
5/
-65 to +200
Operating & Storage Temperature
TOP & TSTG
Maximum Total Thermal Resistance
Junction to Case 4/
1.0
2.0
RqJC
ºC/W
Junction to Case 5/
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Notes:
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Recovery Conditions: I = 0.5 Amp, IR = 1.0 Amp, rec. to .25 Amp.
F
4/ Both Legs Tied Together.
5/ Per Leg.
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TO -254 (M)
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TO -254Z (Z)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0049C
DOC
SDR623CTM & Z
Thru
SDR626DRM & Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics, per leg
Symbol
Max
Units
VDC
Instantaneous Forward Voltage Drop
(IF = 10Adc, Pulse)
(IF = 20Adc, Pulse)
TA = 25 ºC
TA = 25 ºC
VF1
VF2
1.35
1.55
Instantaneous Forward Voltage Drop
(IF = 10Adc, Pulse)
TA = 100 ºC
TA = -55 ºC
VF3
VF4
1.25
1.45
VDC
Reverse Leakage Current
(80% of rated VR, Pulse)
TA = 25 ºC
TA = 100 ºC
IR1
IR2
50
5
mA
mA
Reverse Recovery Time
(IF = 0.5A, IR = 1A, IRR = 0.25A, TA = 25ºC)
tRR
CJ
35
nsec
pF
Junction Capacitance
(VR = 10VDC, TA = 25ºC, f = 1MHz)
150
PIN ASSIGNMENT
Figure 1- Optional Lead Bends
Code
Pin 1
Pin 2
Pin 3
Anode
Cathode
FUNCTION
Common Cathode
Common Anode
Doubler
CT
CA
D
Anode Cathode
Cathode Anode
Cathode Common Anode
Anode Common Cathode
DR
Doubler Reverse
Suffix MDB & ZDB
Suffix MU & ZU
TO -254 (Suffix M) Outline:
TO -254Z (Suffix Z) Outline:
Measured in Inches
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0049C
DOC
相关型号：
SDR626DRJDB
Rectifier Diode, 1 Phase, 2 Element, 40A, 600V V(RRM), Silicon, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN
SSDI
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