SDR646CAZUB [SSDI]
Rectifier Diode, 1 Phase, 2 Element, 40A, 600V V(RRM), Silicon, HERMETIC SEALED, TO-254Z, 3 PIN;
| 型号： | SDR646CAZUB |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 40A, 600V V(RRM), Silicon, HERMETIC SEALED, TO-254Z, 3 PIN 超快恢复二极管 快速恢复二极管 局域网 |
| 文件： | 总2页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR646CTM & Z
thru
SDR647CTM & Z
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
40AMPS
600 - 700 VOLTS
60 nsec
Designer's Data Sheet
FEATURES:
ULTRA FAST
CENTERTAP RECTIFIER
• Ultra Fast Recovery: 60 nsec Maximum
• High Surge Rating
• Low Reverse Leakage Current
• Low Junction Capacitance
TO-254 (M)
TO-254Z (Z)
• Hermetically Sealed Package
• Gold Eutectic Die Attach Available
• Ultrasonic Aluminum Wire Bonds
• Also Available in following configurations:
Common Anode: SDR646CAM & CAZ
SDR647CAM & CAZ
• TX, TXV and Space Level Screening Available
SYMBOL
VALUE
UNITS
Maximum Ratings
Peak Repetitive Reverse and DC Blocking Voltage
V
RRM
SDR646CTM & Z
SDR647CTM & Z
V
600
700
RWM
Volts
V
R
Average Rectified Forward Current.
Io
40
Amps
(Resistive load, 60Hz, Sine Wave, T =25oC) 1/
A
Peak Surge Current
I
400
Amps
oC
FSM
(8.3 ms Pulse, Half Sine Wave, T = 25oC) 1/
A
Operating and Storage Temperature
TOP & Tstg
-65 TO +200
Maximum Thermal Resistance
Junction to Case, 1/
Junction to Case, 2/
2.0
3.5
R
2JC
oC/W
NOTE:
1/
2/
Both Legs Tied Together
Per Leg.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0089D
SDR646CTM & Z
thru
SDR647CTM & Z
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
SYMBOL
MINIMUM
MAXIMUM
UNITS
Electrical Characteristics (Per Leg)
Instantaneous Forward Voltage Drop
I = 10A
I = 20A
F
V
V
--
--
1.28
1.50
F
F1
VDC
(T = 25oC, 300:sec Pulse )
A
F2
Instantaneous Forward Voltage Drop T = 100oC
V
V
1.17
1.35
A
F3
--
VDC
(I = 10A, 300:sec pulse )
T = -55oC
F
A
F4
Reverse Leakage Current
T = 25oC
I
I
--
--
50
5.0
:A
mA
A
R1
R2
( 80% of Rated V 300:s pulse min.) T = 100oC
R,
C
Junction Capacitance
C
--
--
70
60
pF
J
(V = 10V , T = 25oC, f = 1MHz)
R
DC
A
Reverse Recovery Time
(I = 500mA, I = 1.0A, I = 250 mA, T = 25oC)
t
RR
nsec
F
R
RR
A
CASE OUTLINE: TO-254 (Sufix M)
CASE OUTLINE: TO-254Z (Sufix Z)
OPTIONAL LEAD BEND CONFIGURATION
PIN ASSIGNMENT
CODE
CT
FUNCTION
PIN 1
PIN 2
PIN 3
Common Cathode
Anode Cathode Anode
CA
Common Anode Cathode Anode Cathode
SUFIX MDB & ZDB
SUFIX MUB & ZUB
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