SDR646CTZTX [SSDI]
Rectifier Diode, 1 Phase, 2 Element, 40A, 600V V(RRM), Silicon, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN;
| 型号： | SDR646CTZTX |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 40A, 600V V(RRM), Silicon, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN 超快恢复二极管 快速恢复二极管 局域网 |
| 文件： | 总3页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR646CTM, Z, & J
thru
SDR647CTM, Z, & J
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
40 Amp
ULTRAFAST
CENTERTAP RECTIFIER
600-700 Volts
SDR64 __ CT __ __
Screening2/
└
__ = Not Screened
TX = TX Level
TXV = TXV
│
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
S = S Level
60 nsec
Package
M = TO-254
Z = TO-254Z
J = TO-257
Features:
•
•
•
•
•
•
Ultrafast Recovery: 60nsec Maximum
High Surge Rating
Centertap – Common Cathode
Low Reverse Leakage Current
Low Junction Capacitance
Hermetically Sealed Package
Also Available in the following configurations:
Common Anode: SDR646CAM, CAZ, & CAJ
SDR647CAM, CAZ, & CAJ
Voltage 6 = 600 V
7 = 700 V
•
TX, TXV and Space Level Screening
Available2/
Maximum Ratings
Symbol
Value
Units
VRRM
VRWM
VR
SDR646
SDR647
600
700
Peak Repetitive Reverse Voltage
Volts
Average Rectified Forward Current
Io
40
Amps
(Resistive Load, 60 Hz Sine Wave, TC = 25°C)3/
Peak Surge Current
IFSM
400
Amps
ºC
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C)3/
Operating & Storage Temperature
Maximum Total Thermal Resistance
T
OP & TSTG
RθJC
-65 to +200
Junction to Case3/
Junction to Case4/
2.0
3.5
ºC/W
TO-254 (M)
TO-254Z (Z)
TO-257 (J)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0089F
DOC
SDR646CTM, Z, & J
thru
SDR647CTM, Z, & J
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic
Symbol
Min
––
Max
Units
VDC
Instantaneous Forward Voltage Drop
(TA = 25ºC, 300 μsec Pulse)
IF = 10A
IF = 20 A
1.28
1.50
VF1
VF2
Instantaneous Forward Voltage Drop
(IF = 10A, 300 μsec Pulse)
TA = -55 ºC
TA = 100 ºC
VF3
VF4
1.35
1.17
––
VDC
Reverse Leakage Current
(80% of rated VR, 300 μs pulse min.)
TA = 25 ºC
TA = 100 ºC
IR1
IR2
50
5.0
––
––
μA
mA
Reverse Recovery Time
(IF = 0.5A, IR = 1A, IRR = 0.25A, TA = 25ºC)
tRR
CJ
––
60
70
nsec
pF
Junction Capacitance
(VR = 10VDC, TA = 25ºC, f = 1MHz)
––
NOTES:
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Both Legs Tied Together.
4/ Per Leg.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0089F
DOC
SDR646CTM, Z, & J
thru
SDR647CTM, Z, & J
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
PIN ASSIGNMENT
Available Part Numbers:
PACKAGE
TO-254 (M)
TO-254Z (Z)
TO-257 (J)
Pin 1
Pin 2
Pin 3
SDR646CTM, SDR646CTZ, SDR646CTJ
SDR647CTM, SDR647CTZ, SDR647CTJ
Anode 1
Anode 1
Anode 1
Cathode
Cathode
Cathode
Anode 2
Anode 2
Anode 2
TO-254:
TO-254Z:
PIN 3
PIN 2
PIN 3
PIN 2
PIN 1
PIN 1
TO-257:
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0089F
DOC
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