SDR812 [SSDI]
100 AMP 50 - 1200 VOLTS 60 nsec ULTRA FAST RECTIFIER; 100 AMP 50 - 1200伏60纳秒的超快速整流器
| 型号： | SDR812 |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | 100 AMP 50 - 1200 VOLTS 60 nsec ULTRA FAST RECTIFIER |
| 文件： | 总2页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR803
thru
SDR818
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
100 AMP
50 - 1200 VOLTS
60 nsec
Designer's Data Sheet
FEATURES:
ULTRA FAST RECTIFIER
• Ultra Fast Recovery: 60 nsec maximum.
• PIV to 1200 Volts.
DO-5
• Low Forward Voltage Drop.
• Low Leakage Current.
• Hermetically Sealed.
• Single Chip Construction.
• For High Efficiency Applications.
• TX, TXV, and Space Level Screening Available
SYMBOL
VALUE
UNITS
Maximum Ratings
Peak Repetitive Reverse and
DC Blocking Voltage @ 100µA
SDR803
50
100
150
200
250
300
350
400
500
600
700
800
900
1000
1100
1200
SDR804
SDR805
SDR806
SDR807
SDR808
SDR809
SDR810
SDR811
SDR812
SDR813
SDR814
SDR815
SDR816
SDR817
SDR818
V
RRM
V
RWM
Volts
V
R
Average Rectified Forward Current
Io
100
Amps
Amps
(Resistive Load, 60Hz, Sine Wave, T = 25 oC)
A
Peak Surge Current
SDR803 - 806
SDR807 - 809
SDR810 - 814
SDR815 - 818
1000
800
700
600
(8.3 ms Pulse, Half Sine Wave, T = 25oC)
A
I
FSM
Operating and Storage Temperature
T
& T
-55 TO +175
0.85
oC
OP
STG
Maximum Thermal Resistance
Junction to Case
R
oC/W
ΘJC
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0059F
SDR803
thru
SDR818
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SYMBOL
MAXIMUM
UNITS
Electrical Characteristics
Instantaneous Forward Voltage Drop
SDR803 - 806
SDR807 - 810
SDR811 - 814
SDR815 - 818
1.00
1.50
1.85
1.90
(I = 100A , T = 25oC,
F
DC
A
V
F1
V
DC
DC
300 - 500µs Pulse)
Instantaneous Forward Voltage Drop
SDR803 - 806
SDR807 - 810
SDR811 - 814
SDR815 - 818
1.10
1.60
1.95
2.00
(I = 100A , T = -55oC,
F
DC
A
V
V
F2
R
300 - 500µs Pulse)
Reverse Leakage Current
T = 25oC
100
10
µA
mA
A
I
(Rated V , 300 µs minimum Pulse)
T = 100oC
R
A
Junction Capacitance
C
700
60
pF
(V = 10 V , T = 25oC, f = 1 MHz)
J
R
DC
A
Reverse Recovery Time
(I = 500 mA, I = 1 A, I = 250 mA, T = 25oC)
t
nsec
RR
F
R
RR
A
CASE OUTLINE: DO-5
Dimensions prior to
solder dipping
TYPICAL OPERATING CURVES
(T = 25oC unless otherwise specified)
A
55oC
100
80
60
40
20
0
0
25
50
75 100 125 150 175 200
END TAB TEMPERATURE (oC)
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