SDR952MU [SSDI]

Rectifier Diode, 1 Phase, 1 Element, 50A, 200V V(RRM), Silicon, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN;


型号：	SDR952MU
厂家：	SOLID STATES DEVICES, INC
描述：	Rectifier Diode, 1 Phase, 1 Element, 50A, 200V V(RRM), Silicon, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN 超快速恢复二极管局域网
文件：	总2页 (文件大小：78K)
中文：	中文翻译
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SDR950M & Z

Thru

SDR952M & Z

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Designer’s Data Sheet

Part Number/Ordering Information ^1/

__ __ __

50A, 35nsec typ., 100-200 V

Hyper Fast Rectifier

SDR950

Screening ^2/__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

Features:

Hyper Fast Recovery: 50nsec Maximum ^3/

High Surge Rating

Leg Bend Option

(See Figure 1)

Low Reverse Leakage Current

Low Junction Capacitance

Hermetically Sealed Package

Gold Eutectic Die Attach

Ultrasonic Aluminum Wire Bonds

Higher Voltages and Faster Recovery Times

Available, Contact Factory

Package M = TO-254, Z = TO-254Z

Ceramic Seal for Improved Hermeticity Available

TX, TXV, and S-Level Screening Available ^2/

Maximum Ratings

Symbol

Value

Units

100

150

200

SDR950M & Z

SDR951M & Z

SDR952M & Z

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Volts

Average Rectified Forward Current

Amps

(Resistive Load, 60 Hz Sine Wave, T_A= 25 °C) ^5/

Peak Surge Current

(8.3 ms Pulse, Half Sine Wave, or equivalent DC)

350

I_FSM

Amps

ºC

-65 to +200

Operating & Storage Temperature

T_OP& T_STG

Maximum Total Thermal Resistance

Junction to Case ^4/

R_qJC

0.85

ºC/W

Notes:

1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.

2/ Screened to MIL-PRF-19500.

3/ Recovery Conditions: I =10 Amp, di/dt = 200A/µs

4/ Pins 2 and 3 Tied Together.

5/ T_C= 150°C, Derate to 0A @ 200°C.

TO -254 (M)

TO -254Z (Z)

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RH0039K

DOC

SDR950M & Z

Thru

SDR952M & Z

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Electrical Characteristics

Symbol

Max

Units

Instantaneous Forward Voltage Drop

(I_F= 25A, 300-500µsec Pulse)

(I_F= 50A, 300-500µsec Pulse)

T_A= 25 ºC

V_F1

V_F2

1.00

1.25

V_DC

Instantaneous Forward Voltage Drop

T_A= -55 ºC

V_F3

1.35

(I_F= 50Adc, 300-500µsec Pulse)

Reverse Leakage Current

(300µsec Pulse Minimum)

T_A= 25 ºC, Rated V

T_C= 100 ºC, 80% of Rated V

I_R1

I_R2

100

Reverse Recovery Time

(I_F=10 Amp, di/dt = 200A/µs)

t_RR

C_J

nsec

Junction Capacitance

(V_R= 10V_DC, T_A= 25ºC, f = 1MHz)

900

PIN ASSIGNMENT

Figure 1- Optional Lead Bends

Code

Pin 1

Pin 2

Pin 3

FUNCTION

Cathode Anode

Anode

Suffix MD & ZD

Suffix MU & ZU

TO -254 (Suffix M) Outline:

TO -254Z (Suffix Z) Outline:

Measured in Inches

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RH0039K

DOC

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