SDR9PUFSMSTXV [SSDI]
Rectifier Diode,;
| 型号： | SDR9PUFSMSTXV |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, |
| 文件： | 总2页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR5PUF thru SDR5TUF
Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SDR9 __ __ __ __
5.0 AMPS
ULTRAFAST RECOVERY
RECTIFIER
Screening 2/
__ = Not Screened
│
│
│
│
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
└
└
1300 ─ 1500 VOLTS
TX = TX Level
TXV = TXV Level
S = S Level
FEATURES:
PIV to 1500 Volts
Hermetically Sealed
Low Reverse Leakage Current
Single Chip Construction
Replaces Larger DO-4 Rectifiers
Low Thermal Resistance
Package Type
__ = Axial Leaded
SMS = Surface Mount Square Tab
•
•
•
•
•
•
•
•
•
Recovery Time
UF = Ultrafast Recovery (70 ns
maximum)
Available in Axial & Square Tab Versions
TX, TXV, and S-Level Screening Available2/
Voltage/Family
P = 1300V
Standard and Fast Recovery Versions
Available- Contact Factory
R = 1400V
T = 1500V
MAXIMUM RATINGS 3/
RATING
SYMBOL VALUE
UNIT
Volts
VRRM
VRWM
VR
SDR5PUF
SDR5RUF
SDR5TUF
1300
1400
1500
Peak Repetitive Reverse Voltage
And DC Blocking Voltage
Average Rectified Forward Current
IO
5.0
35
Amps
Amps
(Resistive Load, 60Hz, Sine Wave, TA = 25°C )
Peak Surge Current
(8.3 ms pulse, half sine wave, superimposed on Io, allow
junction to reach equilibrium between pulses, TA = 25°C)
IFSM
TJ and
TSTG
Operating & Storage Temperature
-65 to +175
°C
RθJL
RθJE
Junction to Lead for Axial, L =.125"
Junction to End Tab for Surface Mount
8
4
Thermal Resistance
°C/W
NOTES:
Axial Leaded
SMS
1/ For Ordering Information, Price, Operating Curves, and Availability- Contact
Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0138A
DOC
SDR5PUF thru SDR5RUF
Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS3/
CHARACTERISTICS
SYMBOL MAXIMUM
UNIT
Vdc
VF1
VF2
VF3
IF = 5.0 Adc, TA = +25°C
IF = 1.0 Adc, TA = +25°C
IF = 5.0 Adc, TA = -55°C
3.20
1.80
3.40
Instantaneous Forward Voltage Drop
(pulsed)
IR1
IR2
TA = +25°C
TA =+100°C
4.0
150
Reverse Leakage Current
(VR = 80% rated)
μA
SDR5PUF
SDR5RUF
SDR5TUF
1300
1400
1500
V
(min)
Minimum Breakdown Voltage
(IR = 50 uA)
BVR
Junction Capacitance
50
70
CJ
trr
pF
ns
(VR = 10 Vdc, f = 1MHz, TA = 25°C)
Reverse Recovery Time
(IF = 500mA, IR = 1A, IRR = 250mA, TA = 25°C)
Package Outlines:
DIMENSIONS (inches)
DIMENSIONS (inches)
DIM.
A
B
C
D
DIM.
A (SMS)
Minimum
---
.210
.037
1.000
Maximum
.170
Minimum
.170
Maximum
.180
.300
.030
---
B
C
D
.250
.043
---
.260
.020
.002
SMS
AXIAL
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0138A
DOC
相关型号：
SDR9RSMSS
Rectifier Diode, 1 Phase, 1 Element, 9A, 1400V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
SSDI
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