SED15HE100S [SSDI]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 100V V(RRM), Silicon,;
| 型号： | SED15HE100S |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 100V V(RRM), Silicon, 二极管 |
| 文件： | 总2页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SED15HB100
SED15HE100
Solid State Devices, Inc.
14701 Firestone Blvd. * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
15 AMP
100 VOLTS
SCHOTTKY RECTIFIER
Designer’s Data Sheet
Part Number / Ordering Information 1/
SED15 __ 100__
L Screening2/ = None
FEATURES:
Low Reverse Leakage
Low Forward Voltage Drop
Hermetically Sealed Power Surface
Mount Package
Guard Ring for Overvoltage Protection
Eutectic Die Attach
TX = TX Level
TXV = TXV Level
S = S Level
L
Configuration
HB = without lead
HE = with lead
175°C Operating Temperature
TX, TXV, and Space Level Screening
Available2/
MAXIMUM RATINGS
Symbol
Value
Units
Volts
Peak Repetitive Reverse Voltage
and DC Blocking Voltage
VRRM
VRWM
VR
100
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, TA = 100°C)
IO
15
Amps
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on IO, allow junction to
reach equilibrium between pulses, TA = 25°C)
IFSM
175
Operating and Storage Temperature
TOP & Tstg -55 to +175
°C
Maximum Thermal Resistance
Junction to Case
1.3
°C/W
RJC
Notes:
SEDPACK 1
1/ For ordering information, price, operating curves, and availability – Contact
factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
HB Series
HE Series
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RSED47B
DOC
SED15HB100
SED15HE100
Solid State Devices, Inc.
14701 Firestone Blvd. * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Symbol
Maximum
Unit
VDC
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage Drop
(IF = 10 ADC, TA = 25°C, 300 µsec Pulse)
(IF = 15 ADC, TA = 25°C, 300 µsec Pulse)
VF1
VF2
0.78
0.83
Instantaneous Forward Voltage Drop
(IF = 10 ADC, TA = +125°C, 300 µsec Pulse)
(IF = 15 ADC, TA = +125°C, 300 µsec Pulse)
VF3
VF4
0.63
0.67
VDC
Reverse Leakage Current
(Rated VR, TA = 25°C, 300 µsec pulse minimum)
IR1
IR2
CJ
1.5
10
mA
mA
pF
Reverse Leakage Current
(Rated VR, TA = 100°C, 300 µsec pulse minimum)
Junction Capacitance
(VR = 10V, TA = 25°C, f = 1 MHz)
600
CASE OUTLINE: SED15HB100
CASE OUTLINE: SED15HE100
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RSED47B
DOC
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