SER30KB30S [SSDI]
Rectifier Diode, 1 Phase, 1 Element, 30A, 300V V(RRM), Silicon, HERMETIC SEALED PACKAGE-1;
| 型号： | SER30KB30S |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 30A, 300V V(RRM), Silicon, HERMETIC SEALED PACKAGE-1 快速恢复能力电源 超快恢复二极管 快速恢复二极管 超快速恢复能力电源 |
| 文件： | 总2页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SER30KB60 / SER30KE60
Series
Solid State Devices, Inc.
14701 Firestone Blvd. * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
30 AMP 300-600 VOLT
ULTRAFAST POWER
SURFACE MOUNT RECTIFIER
Designer’s Data Sheet
Part Number / Ordering Information 1/
SER30__ 60 __
FEATURES:
L Screening2/ = None
Low Reverse Leakage
Low Forward Voltage Drop
Hermetically Sealed Power Surface Mount
Package
TX = TX Level
TXV = TXV Level
S = S Level
L
Voltage
TX, TXV, and Space Level Screening
L
Available2/
Configuration
KB = without lead
KE = with lead
MAXIMUM RATINGS
Symbol
Value
Units
Volts
Peak Repetitive Reverse Voltage
and DC Blocking Voltage
SER30KE30, SER30KB30
SER30KE40, SER30KB40
SER30KE50, SER30KB50
SER30KE60, SER30KB60
300
400
500
600
VRRM
VRWM
VR
Average Rectified Forward Current
IO
30
Amps
Amps
(Resistive Load, 60 Hz, Sine Wave, TA = 100oC)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, Superimposed on IO, Allow Junction
IFSM
400
to Reach Equilibrium between Pulses, TA = 25oC)
Operating and Storage Temperature
TOP & Tstg
RJC
-55 to +200
1.2
oC
Maximum Thermal Resistance
Junction to Case
oC/W
CASE OUTLINE: KB60 Series
CASE OUTLINE: KE60 Series
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0128D
DOC
SER30KB60 / SER30KE60
Series
Solid State Devices, Inc.
14701 Firestone Blvd. * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Symbol
Typical
Maximum
Unit
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage Drop
(IF = 5 A, 300 sec Pulse)
TA = -55oC
TA = 25oC
VF1a
VF1b
VF1c
VF1d
VF1e
1070
950
760
710
650
-
-
-
-
-
TA = 100oC
TA = 125oC
TA = 150oC
mVDC
Instantaneous Forward Voltage Drop
(IF =10 ADC, 300 sec Pulse)
TA = -55oC
VF2a
VF2b
VF2c
VF2d
VF2e
1150
1050
860
810
750
-
1150
-
975
-
TA = 25oC
TA = 100oC
TA = 125oC
TA = 150oC
mVDC
mVDC
mVDC
mVDC
Instantaneous Forward Voltage Drop
(IF =20 ADC, 300 sec Pulse)
TA = -55oC
VF3a
VF3b
VF3c
VF3d
VF3e
1260
1170
1000
950
-
-
-
-
-
TA = 25oC
TA = 100oC
TA = 125oC
TA = 150oC
880
Instantaneous Forward Voltage Drop
(IF =30 ADC, 300 sec Pulse)
TA = -55oC
VF4a
VF4b
VF4c
VF4d
VF4e
1340
1260
1100
1050
990
-
TA = 25oC
1400
TA = 100oC
TA = 125oC
TA = 150oC
-
1250
-
Instantaneous Forward Voltage Drop
(IF =50 ADC, 300 sec Pulse)
TA = -55oC
VF5a
VF5b
VF5c
VF5d
VF5e
1480
1400
1240
1190
1150
-
-
-
-
-
TA = 25oC
TA = 100oC
TA = 125oC
TA = 150oC
Reverse Leakage Current
(Rated VR, 300 sec pulse minimum)
TA = 25oC
TA = 100oC
TA = 125oC
TA = 150oC
IR1
IR2
IR3
IR4
0.1
6
25
80
10
-
500
-
uA
pF
Junction Capacitance
VR= 5 V
VR = 10 V
190
140
-
CJ
(TA = 25oC, f = 1 MHz)
250
Reverse Recovery
IF= 0.5 A, IR= 1 A, Irr= 0.25 A
IF= 1 A, IR= 1 A, Irr= 0.1 A
trr1
trr2
trr3
IRM3
trr4
IRM4
trr5
32
75
46
1.8
115
3.8
45
35
-
-
-
-
-
-
-
ns
ns
ns
A
ns
A
IF= 10 A, dIF/dt= 45 A/us, Ta= 25 oC
IF= 10 A, dIF/dt= 45 A/us, Ta= 25 oC
IF= 10 A, dIF/dt= 45 A/us, Ta= 100 oC
IF= 10 A, dIF/dt= 45 A/us, Ta= 100 oC
IF= 10 A, dIF/dt= 100 A/us, Ta= 25 oC
IF= 10 A, dIF/dt= 100 A/us, Ta= 25 oC
ns
A
IRM5
3.7
Forward Recovery
NOTES:
tfr
Vfr
60
880
-
-
ns
mV
IF= 1 A
1/ For ordering information, price, operating curves, and availability – contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0128D
DOC
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