SFF1305TXV [SSDI]
8A, 100V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-5, HERMETICALLY SEALED, 3 PIN;
| 型号： | SFF1305TXV |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | 8A, 100V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-5, HERMETICALLY SEALED, 3 PIN 晶体管 |
| 文件： | 总2页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFF130/5
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
8 AMP / 100 Volts
0.18 Ω
Part Number / Ordering Information 1/
SFF130 __ __
N-Channel Power MOSFET
Screening 2/
│
│
│
│
│
│
│
└
└
__ = Not Screen
TX = TX Level
TXV = TXV Level
S = S Level
Features:
• Rugged Construction with Poly Silicon Gate
• Low RDS(ON) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
Package
/5= TO-5
• Fast Recovery and Superior dV/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Hermetically Sealed Package
• Available in both hot case and isolated versions
• Ideal for low power applications
2/
• TX, TXV, Space Level Screening Available
• Replacement for IRFF130 Types
TO-5
Maximum Ratings 3/
Symbol
Value
Units
Drain – Source Voltage
Gate – Source Voltage
VDS
VGS
100
±20
Volts
Volts
TC = 25ºC
8
Continuous Collector Current
ID
Amps
TC = 100ºC
5
TC = 25ºC
25
19
Power Dissipation
PD
Watts
ºC
TA = 25ºC
Operating & Storage Temperature
Top & Tstg
-55 to +150
Thermal Resistance
5
ºC/W
mJ
RθJC
EAS
Junction to Case
Single Pulse Avalanche Energy
75
NOTES:
TO-5 Case Outline:
1/ For Ordering Information, Price, Operating
Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Unless Otherwise Specified, All Maximum
Ratings and Electrical Characteristics @25ºC.
NOTE: All specifications are subject to change without notification.
DATA SHEET #: F00019D
DOC
SCD's for these devices should be reviewed by SSDI prior to release.
SFF130/5
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics @ TJ = 25ºC
Symbol
Min
Typ
––
Max
––
Units
(Unless Otherwise Specified)
Drain to Source Breakdown Voltage
BVDSS
100
––
––
2.0
3
Volts
(VGS=0 V, ID=250 µA)
Temperature Coefficient of Breakdown Voltage
∆BVDSS
∆Tj
mV/ ºC
100
––
Drain to Source On State Resistance
ID=5A
ID=8A
0.13
0.14
0.18
0.21
RDS(on)
VGS(th)
gfs
Ω
V
(VGS=10 V )
Gate Threshold Voltage
2.8
7
4.0
––
(VDS=VGS, ID=250 µA )
Forward Transconductance
mho
(VDS>ID(on) X RDS(on) Max, IDS= 9A)
Zero Gate Voltage Drain Current
(VDS=80% max rated voltage, VGS=0 V)
––
––
––
––
25
µA
nA
nC
IDSS
IGSS
(VDS=80% rated VDS, VGS=0 V, TA=125ºC)
250
Gate to Source Leakage Forward
––
––
––
––
+100
-100
At rated VGS
Gate to Source Leakage Reverse
Total Gate Charge
VGS=10 Volts
50% rated VDS
Rated ID
Qg
Qgs
Qgd
12
1
17
3.7
7.0
28
6.3
Gate to Source Charge
Gate to Drain Charge
3.8
16.6
Turn on Delay Time
VDD=50%
Rated VDS
ID = 8A
td(on)
tr
td(off)
tf
––
––
––
––
9.5
42
22
25
30
75
40
45
Rise Time
Turn on Delay Time
Fall Time
nsec
V
RG= 7.5Ω
Diode Forward Voltage
VSD
––
1
1.5
(IS= Rated ID, VGS=0 V, TJ=25ºC)
TJ=25ºC
IF=10A
Di/dt=100A/µsec
Diode Reverse Recovery Time
Reverse Recovery Charge
trr
––
––
120
0.7
300
3
nsec
nC
QRR
Input Capacitance
VGS=0 Volts
VDS=25 Volts
f=1 MHz
Ciss
Coss
Crss
––
––
––
650
250
44
––
––
––
Output Capacitance
pF
Reverse Transfer Capacitance
For thermal derating curves and other characteristics please contact SSDI Marketing Department.
PIN ASSIGNMENT (Standard)
Available Part Number:
SFF130/5
Package
TO-5
Drain
Source
Pin 1
Gate
Pin 2
Pin 3
NOTE: All specifications are subject to change without notification.
DATA SHEET #: F00019D
DOC
SCD's for these devices should be reviewed by SSDI prior to release.
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