SFF20N60ZDBS [SSDI]
Transistor;
| 型号： | SFF20N60ZDBS |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFF20N60M
SFF20N60Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
20 AMP / 600 Volts
Typ 0.30 Ω
N-Channel POWER MOSFET
__
__
│
│
__
SFF20N60
│
│
│
└ Screening 2/ __ = Not Screen
TX = TX Level
TXV = TXV Level
S = S Level
│
│
│
│
│
Features:
│
│
│
└ Lead Option 3/
__ = Straight Leads
DB = Down Bend
UB = Up Bend
Rugged Construction with Polysilicon Gate
Low RDS(ON) and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dV/dt performance
└ Package 3/ M = TO-254
Z = TO-254Z
Increased Reverse Energy Capability
TO-254 (M)
TO-254Z (Z)
Low Input and Transfer Capacitance for Easy Paralleling
Hermetically Sealed, Isolated Surface Mount Power Package
Ceramic Seals for Improved Hermeticity
TX, TXV, S-Level screening available
Replacement for IXTH20N60 Types
Maximum Ratings
Symbol
VDS
Value
Units
Volts
Volts
Amps
Drain – Source Voltage
Gate – Source Voltage
Continues Drain Current
600
±30
20
VGS
ID
EAR
EAS
0.03
1.0
Avalanche Energy, repetitive
Avalanche energy, single pulse
J
150
114
TC = 25ºC
TC = 55ºC
Power Dissipation
PD
Top & Tstg
RθJC
W
ºC
Operating & Storage Temperature
-55 to +175
Maximum Thermal Resistance
Junction to Case
0.83
ºC/W
Case Outline: TO-254 (M)
Case Outline: TO-254Z (Z)
Optional Lead Bend Configuration
MDB & ZDB
MUB & ZUB
Suffixes
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00201D
DOC
SFF20N60M
SFF20N60Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics 3/
Symbol
BVDSS
RDS(on)
ID(on)
Min
600
––
Typ
––
Max
––
Units
Volts
Ω
Drain to Source Breakdown Voltage
(VGS = 0V, ID = 250µA)
Drain to Source On State Resistance
(VGS = 10V, ID = 60% Rated ID)
0.30
25
0.35
––
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
20
A
Gate Threshold Voltage
(VDS = VGS, ID = 4mA)
VGS(th)
IGSS
2.0
––
3.4
––
4.5
V
Gate to Source Leakage
±100
nA
(At Rated VGS
)
Zero Gate Voltage Drain Current
(VGS = 0V)
V
DS = Rated, TA = 25ºC
––
––
––
––
25
1.0
µA
mA
IDSS
VDS = 80% Rated, TA = 125ºC
Forward Transconductance *
(VDS > ID(on) x RDS(on) Max, IDS = 50% Rated ID)
gfs
10
20
––
Mho
nC
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = 10V
50% Rated VDS
50% Rated ID
Qg
Qgs
Qgd
––
––
––
100
23
45
170
40
85
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
td(on)
tr
td(off)
tf
––
––
––
––
28
30
80
25
40
60
150
60
VDD = 50% Rated VDS
50% Rated ID
nsec
V
RG = 6.2Ω
Diode Forward Voltage *
(IS = Rated ID, VGS = 0V, TJ = 25°C)
VSD
––
0.875
1.5
Diode Reverse Recovery Time
Reverse Recovery Charge
(IF = 10A, di/dt = 100A/µsec, TJ = 25°C)
nsec
µC
trr
QRR
––
––
240
1.3
800
––
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
Ciss
Coss
Crss
––
––
––
4000
400
120
––
––
––
pF
NOTES:
*
Pulse test: pulse width = 300µsec, duty cycle = 2%
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @25ºC.
PIN ASSIGNMENT (Standard)
Available Part Numbers:
SFF20N60M; SFF20N60MDB; SFF20N60MUB;
SFF20N60Z; SFF20N60ZDB; SFF20N60ZUB;
Package
TO-254 (M)
TO-254Z (Z)
Drain
Pin 1
Pin 1
Source
Pin 2
Pin 2
Gate
Pin 3
Pin 3
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00201D
DOC
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