SFF3810Q [SSDI]
Power Field-Effect Transistor, 60A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, MODIFIED TO-258, 3 PIN;
| 型号： | SFF3810Q |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Power Field-Effect Transistor, 60A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, MODIFIED TO-258, 3 PIN 局域网 开关 晶体管 |
| 文件： | 总2页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFF3810 Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
350 AMP , 75 Volts, 2.5 mΩ
Avalanche Rated N-channel
TrenchFET
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFF3810 ___ ___ ___
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
Features:
Rugged poly-Si gate
Lowest ON-resistance in the industry
Avalanche rated
Hermetically Sealed, Isolated Package
Low Total Gate Charge
Fast Switching
Lead Option 3/
__ = Straight Leads
DB = Down Bend
UB = Up Bend
Package 3/ 4/
TX, TXV, S-Level screening available
Improved (RDS(ON) QG) figure of merit
Q = TO-258 modified
E = MILPACK III
Maximum Ratings5/
Symbol
VDSS
Value
Units
V
Drain - Source Voltage
75
+ 20
+ 30
continuous
transient
Gate – Source Voltage
VGS
ID1
V
A
A
Max. Continuous Drain Current (package
limited)
60
@ TC = 25ºC
@ TC = 25ºC
@ TC = 125ºC
ID2
ID3
350
150
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
@ L= 0.1 mH
@ L= 0.1 mH
@ TC = 25ºC
IAR
EAS
200
3000
A
mJ
W
Single and Repetitive Avalanche Energy
Total Power Dissipation
600
PD
Operating & Storage Temperature
-55 to 175
ºC
TOP & TSTG
Maximum Thermal Resistance
(Junction to Case)
RθJC
0.5
ºC/W
NOTES:
MILPACK III (E)
TO-258 modified (Q)
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact
factory.
2/ Screening based on MIL-PRF-19500. Screening flows
available on request.
3/ For lead bending options / pinout configurations - contact
factory.
4/ Maximum current limited by package configuration
5/ Unless otherwise specified, all electrical characteristics
@25oC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0051A
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF3810 Series
Electrical Characteristics5/
Symbol Min
Typ Max Units
Drain to Source Breakdown Voltage
V
GS = 0V, ID = 3 mA
BVDSS
75
80
––
V
Drain to Source On State
Resistance
V
V
GS = 10V, ID = 125A, Tj= 25oC
––
––
––
2.5
2
5
3
-
––
GS = 15V, ID = 125A, Tj=25oC RDS(on)
mΩ
VGS = 10V, ID = 125A, Tj= 175oC
VDS = VGS, ID = 8.0mA, Tj= 25oC
VDS = VGS, ID = 8.0mA, Tj= 125oC
VDS = VGS, ID = 8.0mA, Tj= -55oC
2.5
1.5
––
3.6
3.0
5
5.0
––
6
Gate Threshold Voltage
Gate to Source Leakage
VGS(th)
V
VGS = ±20V, Tj= 25oC
––
––
10
30
±200
––
IGSS
nA
VGS = ±20V, Tj= 125oC
VDS = 75V, VGS = 0V, Tj = 25oC
VDS = 75V, VGS = 0V, Tj = 150oC
––
––
0.06
150
25
2000
μA
μA
Zero Gate Voltage Drain Current
Forward Transconductance
IDSS
gfs
V
DS = 10V, ID = 60A, Tj = 25oC
65
100
––
Mho
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
V
GS = 10V
Qg
Qgs
Qgd
––
––
––
550
180
140
––
––
––
V
DS = 37.5V
ID = 200A
nC
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
V
GS = 10V
td(on)
tr
td(off)
tf
––
––
––
––
50
40
80
40
––
––
––
––
V
DS = 37.5V
ID = 200A
RG = 1.0Ω, pw= 3us
nsec
V
Diode Forward Voltage
IF = 100A, VGS = 0V
VSD
––
0.90
1.25
trr1
Irm1
Qrr1
––
––
––
150
7
360
––
––
––
nsec
A
nC
Diode Reverse Recovery Time
Reverse Recovery Charge
IF = 150A, di/dt = 100A/usec
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
V
GS = 0V
DS = 25V
f = 1 MHz
Ciss
Coss
Crss
––
––
––
41
4.15
530
––
––
––
nF
nF
pF
MILPACK III (E)
TO-258 mod (Q)
TOLERANCES: .XXX ± .010
PIN ASSIGNMENT (Standard)
Package
TO-258 mod
MILPACK III
Drain
Pin 1
Pin 1
Source
Pin 2
Pin 2
Gate
Pin 3
Pin 3
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0051A
DOC
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