SFF40N30M_1 [SSDI]
Avalanche Rated N-channel MOSFET; 雪崩额定N通道MOSFET型号: | SFF40N30M_1 |
厂家: | SOLID STATES DEVICES, INC |
描述: | Avalanche Rated N-channel MOSFET |
文件: | 总2页 (文件大小:123K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SFF40N30M
SFF40N30Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
40 AMP , 300 Volts, 50 mΩ
Avalanche Rated N-channel
MOSFET
Part Number / Ordering Information 1/
SFF40N30 ___ ___ ___
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
Features:
Rugged poly-Si gate
Lead Option 3/
__ = Straight Leads
DB = Down Bend
UB = Up Bend
•
•
•
•
•
•
•
•
Lowest ON-resistance in the industry
Avalanche rated
Hermetically Sealed, Isolated Package
Low Total Gate Charge
Fast Switching
TX, TXV, S-Level screening available
Improved (RDS(ON) QG) figure of merit
Package 3/ 4/
M = TO-254
Z = TO-254Z
Maximum Ratings
Symbol
VDSS
Value
Units
V
Drain - Source Voltage
Gate – Source Voltage
300
±20
±30
continuous
transient
VGS
ID1
V
A
Max. Continuous Drain Current (package
limited)
40
@ TC = 25ºC
@ TC = 25ºC
@ TC = 125ºC
ID2
ID3
40
35
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
A
A
IAR
@ L= 0.1 mH
@ L= 0.1 mH
@ TC = 25ºC
40
EAS
EAR
1500
50
Single and Repetitive Avalanche Energy
mJ
Total Power Dissipation
W
PD
150
Operating & Storage Temperature
ºC
-55 to +150
TOP & TSTG
Maximum Thermal Resistance
(Junction to Case)
1.0
(typ.0.75)
RθJC
ºC /W
NOTES:
TO-254
TO-254Z
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact
factory.
2/ Screening based on MIL-PRF-19500. Screening flows
available on request.
3/ For package outlines / lead bending options / pinout
configurations - contact factory.
4/ Maximum current limited by package configuration
5/ Unless otherwise specified, all electrical characteristics
@25ºC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00141H
DOC
SFF40N30M
SFF40N30Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics 5/
Symbol Min Typ Max Units
Drain to Source Breakdown Voltage
Drain to Source On State Resistance
BVDSS
V
GS = 0V, ID = 250μA
300
310
––
V
VGS = 10V, ID = 35A, Tj= 25ºC
VGS = 10V, ID = 35A, Tj=125ºC
––
––
50
110
60
––
RDS(on)
mΩ
VDS = VGS, ID = 1.0mA, Tj= 25ºC
VDS = VGS, ID = 1.0mA, Tj= 125ºC
VDS = VGS, ID = 1.0mA, Tj= -55ºC
2.5
1.5
––
4.0
3.0
5.0
5.0
––
6
Gate Threshold Voltage
Gate to Source Leakage
VGS(th)
V
VGS = ±20V, Tj= 25ºC
VGS = ±20V, Tj= 125ºC
––
––
10
30
±100
––
IGSS
IDSS
gfs
nA
VDS = 300V, VGS = 0V, Tj = 25ºC
VDS = 300V, VGS = 0V, Tj = 125ºC
––
––
0.01
5.0
25
250
μA
μA
Zero Gate Voltage Drain Current
Forward Transconductance
VDS = 10V, ID = 35A, Tj = 25ºC
20
33
––
Mho
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Qg
Qgs
Qgd
VGS = 10V
VDS = 150V
ID = 35A
––
––
––
140
50
60
250
––
––
nC
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VGS = 10V
VDS = 150V
ID = 40A
RG = 4.0Ω, pw= 3us
––
––
––
––
40
40
110
40
50
50
125
50
nsec
V
Diode Forward Voltage
VSD
IF = 40A, VGS = 0V
––
0.95
1.5
Diode Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
––
––
180
1.3
200
––
nsec
μC
IF = 10A, di/dt = 100A/usec
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V
VDS = 25V
f = 1 MHz
––
––
––
5000
750
145
––
––
––
pF
PIN ASSIGNMENT (Standard)
Available Part Numbers:
Consult Factory
Package
Drain
Pin 1
Pin 1
Source
Pin 2
Gate
Pin 3
Pin 3
TO-254 (M)
TO-254Z (Z)
Pin 2
TO254 (M)
TO254Z (Z)
PIN 3
PIN 2
PIN 1
PIN 3
PIN 2
PIN 1
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00141H
DOC
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