SFF40N60NUB [SSDI]
Power Field-Effect Transistor;
| 型号： | SFF40N60NUB |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总3页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFF40N60N
SFF40N60P
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
40 AMP / 600 Volts
Typ 40 mΩ
N-Channel POWER MOSFET
__
__
│
│
│
│
│
│
│
│
__
SFF40N60
│
│
│
│
│
└ Screening 2/ __ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Features:
Rugged Construction with Polysilicon Gate
Very Low RDS(ON) and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dV/dt performance
└ Lead Option
__ = Straight Leads
DB = Down Bend
UB = Up Bend
└ Package N = TO-258
P = TO-259
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Hermetically Sealed, Isolated Surface Mount Power Package
Ceramic Seals for Improved Hermeticity
TX, TXV, S-Level screening available
Maximum Ratings
Symbol
VDS
Value
600
±20
40
Units
Volts
Volts
Amps
Drain – Source Voltage
Gate – Source Voltage
Continues Drain Current
VGS
ID
EAR
EAS
3
Avalanche Energy, repetitive
Avalanche energy, single pulse
mJ
1900
150
114
TC = 25ºC
TC = 55ºC
Power Dissipation
PD
Top & Tstg
RθJC
W
ºC
Operating & Storage Temperature
-55 to +150
Maximum Thermal Resistance
Junction to Case
0.83
ºC/W
NOTES:
TO-258 (N)
TO-259 (P)
*
Pulse test: pulse width = 300µsec, duty cycle = 2%
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @25ºC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0059A
DOC
SFF40N60N
SFF40N60P
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics 3/
Symbol
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
(VGS = 0V, ID = 250µA)
BVDSS
600
650
––
Volts
ID = 25A
ID = 15A
ID = 15A, 125°C
RDS(on)1
RDS(on)2
RDS(on)3
––
––
––
40
40
80
50
––
––
Drain to Source On State Resistance
(VGS = 10V)
mΩ
TA = 25ºC
TA = 125ºC
TA = -55ºC
2.0
1.0
-
3.0
2.2
3.3
4.0
-
5.0
Gate Threshold Voltage
(VDS = VGS, ID = 4mA)
VGS(th)
V
Gate to Source Leakage
(At Rated VGS)
IGSS
––
––
±100
nA
Zero Gate Voltage Drain Current
(VGS = 0V)
IDSS1
IDSS2
VDS = Rated, TA = 25ºC
––
––
0.5
500
25
750
µA
µA
VDS = Rated, TA = 125ºC
Forward Transconductance *
(VDS > ID(on) x RDS(on) Max, IDS = 50% Rated
ID)
gfs
10
25
––
Mho
nC
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = 10V
VDS = 300V
ID = 16.5A
Qg
Qgs
Qgd
––
––
––
150
40
50
200
60
65
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
td(on)
tr
td(off)
tf
––
––
––
––
45
20
200
20
60
40
250
30
VDD = 300V
ID = 16.5A
RG = 2Ω
nsec
V
Diode Forward Voltage *
(IS = Rated ID, VGS = 0V, TJ = 25°C)
VSD
––
0.875
1.0
Diode Reverse Recovery Time
Reverse Recovery Charge
(IF = 10A, di/dt = 100A/µsec, TJ =
25°C)
nsec
µC
trr
QRR
––
––
400
5.6
550
––
VGS = 0V, VDS = 25V, f = 1 MHz
VGS = 0V, VDS = 100V, f = 1 MHz
15.2
9.2
8800
400
nF
nF
pF
pF
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
––
––
––
––
––
––
VGS = 0V, VDS = 25V, f = 1 MHz
Coss
VGS = 0V, VDS = 100V, f = 1 MHz
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0059A
DOC
SFF40N60N
SFF40N60P
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Optional Lead Bend Configuration
Case Outline: TO-258 (N)
NDB & PDB
NUB & PUB
NOTES:
Case Outline: TO-259 (P)
*
Pulse test: pulse width = 300µsec, duty cycle
= 2%
1/ For ordering information, price, and
availability - contact factory.
2/ Screening based on MIL-PRF-19500.
Screening flows available on request.
3/ Unless otherwise specified, all electrical
characteristics @25ºC.
Available Part Numbers:
SFF40N60N; SFF40N60NDB;
SFF40N60NUB;
SFF40N60P; SFF40N60PDB;
SFF40N60PUB
PIN ASSIGNMENT (Standard)
Package
TO-258 (N)
TO-259 (P)
Drain
Pin 1
Pin 1
Source
Pin 2
Gate
Pin 3
Pin 3
Pin 2
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0059A
DOC
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