SFF9140J [SSDI]
-18 AMP -100 VOLTS 0.20 ohm P-Channel Power MOSFET; -18 AMP -100 VOLTS 0.20欧姆P通道功率MOSFET
| 型号： | SFF9140J |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | -18 AMP -100 VOLTS 0.20 ohm P-Channel Power MOSFET |
| 文件： | 总2页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFF9140J
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
-18 AMPS
-100 VOLTS
0.20 W
Designer’s Data Sheet
FEATURES:
·
·
·
·
·
·
·
Rugged Construction with Poly Silicon Gate
Low RDS(on) and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dv/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy
Paralleling
P-CHANNEL
POWER MOSFET
TO-257
·
·
·
Hermetically Sealed
Replaces: IRF9140 Types
TX, TXV, and Space Level Screening Available.
Consult Factory.
MAXIMUM RATINGS
Drain to Source Voltage
Gate to Source Voltage
Symbol
VDS
Value
-100
±20
Units
Volts
Volts
VGS
TC = 25oC
-18
-11
Continuous Drain Current
ID
Amps
TC = 100oC
Operating and Storage Temperature
Thermal Resistance, Junction to Case
TOP & Tstg
RqJC
-55 to +150
2.0
oC
oC/W
TC = 25oC
TC = 55oC
63
48
Total Device Dissipation
PD
Watts
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
EAS
EAR
500
mJ
mJ
12.5
PACKAGE OUTLINE:
TO-257 (J)
PINOUT:
PIN 1: DRAIN
PIN 2: SOURCE
PIN 3: GATE
SUFFIX JDB
SUFFIX JUB
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FP0015G
DOC
SFF9140J
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Drain to Source Breakdown Voltage
(VGS = 0 V, ID = 1 mA)
-100
––
––
––
Volts
DBVDSS
DBVDSS
Temperature Coefficient of Breakdown Voltage
––
0.087
Volts
W
TJ
Drain to Source ON State Resistance
(VGS = -10 V)
ID = 11A
ID = 18A
––
––
0.15
––
0.20
0.23
RDS(on)
VGS(th)
gfs
Gate Threshold Voltage
(VDS = VGS, ID = 250mA)
-2.0
6.1
––
-4.0
––
Volts
S mho
Forward Transconductance
(VDS > 10V, IDS = 11A)
8.0
Zero Gate Voltage Drain Current
(VDS = 80% rated VDS, VGS = 0 V)
––
––
––
––
25
250
IDSS
mA
nA
nC
(VDS = 80% rated VDS, VGS = 0 V, TA = 125oC)
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
––
––
––
––
-100
100
At rated VGS
IgSS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = -10 Volts
50% rated VDS
ID = -18 A)
Qg
Qgs
Qgd
31
––
7
50
3
25
70
15
45
(VDD = 50% of
rated VDS
rated ID
RG = 9.1 W)
Turn ON Delay Time
Rise Time
Turn OFF Delay Time
Fall TIme
td(on)r
tr
td(off)
tf
––
––
––
––
15
8
35
20
35
85
85
65
ns
Diode Forward Voltage
(IS = rated ID, VGS = 0 V, TJ = 25°C)
VSD
––
––
-4.2
Volts
TJ = 25oC
IF = rated ID
di/dt = 100 A/msec
ns
mC
Diode Reverse Recovery Time
Reverse Recovery Charge
trr
QRR
––
––
170
––
280
3.6
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0 Volts
VDS = -25 Volts
f = 1 MHz
Ciss
Coss
Crss
––
––
––
1400
600
200
1650
740
260
ns
相关型号：
SFF9140JDB
Power Field-Effect Transistor, 18A I(D), 100V, 0.23ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN
SSDI
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