SFS2329TXV [SSDI]
Silicon Controlled Rectifier, 1.6A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-5, HERMETIC SEALED PACKAGE-3;
| 型号： | SFS2329TXV |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Silicon Controlled Rectifier, 1.6A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-5, HERMETIC SEALED PACKAGE-3 |
| 文件： | 总2页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFS2323 thru SFS2329
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
1.6 AMP
SILICON CONTROLLED
RECTIFIER
Designer’s Data Sheet
Part Number/Ordering Information 1/
SFS23 ___ ___
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
50 ─ 400 VOLTS
│
│
│
│
│
└
└
FEATURES:
S = S Level
•
•
•
•
•
Low-Level Gate Characteristics
IGT = 200 μA (Max) @ 25oC
Low Holding Current IH = 1 mA (Max) @ 25oC
Anode Common to Case
Voltage/Family
23 = 50V
27 = 250V
28 = 300V
29 = 400V
24 =100V
26 = 200V
Hermetically Sealed
MAXIMUM RATINGS
Symbol
Value
Units
Volts
SFS2323
SFS2324
SFS2326
SFS2327
SFS2328
SFS2329
50
100
200
250
300
400
VDRM
VRRM
Peak Repetitive Reverse Voltage
and DC Blocking Voltage
SFS2323
SFS2324
SFS2326
SFS2327
SFS2328
SFS2329
75
150
300
350
400
500
Non-Repetitive Peak Reverse Blocking Voltage
(t < 5.0 ms)
VRSM
Volts
RMS On-State Current
(All Conduction Angles)
IT (RMS)
ITSM
1.6
15
Amps
Amps
Peak Non-Repetitive Surge Current
(One Cycle, 60 Hz, TC = 80oC )
Peak Gate Power
PGM
PG (AV)
IGM
0.1
0.01
Watts
Watts
Amps
Volts
oC
Average Gate Power
Peak Gate Current
0.1
Peak Gate Voltage
VGM
TJ
6.0
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case
-65 to +125
-65 to +150
30
Tstg
oC
RθJC
oC/W
NOTES:
TO-5
1/ For ordering information, price, operating curves, and availability- Contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @25ºC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SCR004C
DOC
SFS2323 thru SFS2329
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS
Symbol
IRRM
Min
Typical
Max
Unit
Peak Reverse Blocking Current
(Rated VRRM, TC = 25oC)
0.12
0.1
1
100
––
μA
(Rated VRRM, TC = 125oC)
Peak Forward Blocking Current
(Rated VRRM, TC = 25oC)
0.14
1.0
1
100
––
––
IDRM
VTM
IGT
μA
Volts
μA
(Rated VRRM, TC = 125oC)
Peak On-State Voltage
(IF = 1.6 A Peak)
1.1
1.3
Gate Trigger Current
––
––
3.5
9.2
200
350
(VD = 6 VDC, RL = 100 Ω , TC = 25oC)
(VD = 6 VDC, RL = 100 Ω, TC = -65oC)
Gate Trigger Voltage
––
––
0.1
0.51
0.74
0.25
0.7
0.9
0.9
(VD = 6 VDC, RL = 100 Ω , TC = 25oC)
(VD = 6 VDC, RL = 100 Ω, TC = -65oC)
(VD = 6 VDC, RL = 100 Ω , TC = 125oC)
VGT
Volts
mA
Holding Current
0.8
1.5
0.15
1.0
1.8
0.46
2.0
3.0
––
(VD = 6 VDC, RL = 100 Ω , TC = 25oC)
(VD = 6 VDC, RL = 100 Ω, TC = -65oC)
(VD = 6 VDC, RL = 100 Ω , TC = 125oC)
IH
NOTES:
* RGK current is not included in measurement
Case Outline: TO-5
1.500
MIN
.021
.260
.240
PIN 1: CATHODE
PIN 2: GATE
Ø
.016
.210
PIN 3: ANODE
Ø
.190
PIN 3
PIN 2
.370 .335
Ø
Ø
.335 .305
45°
PIN 1
.045
.029
.034
.028
.125
.009
*For information on curves, contact the Factory Representative for Engineering Assistance.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SCR004C
DOC
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