SFT2012/3TXV [SSDI]
Transistor;
| 型号： | SFT2012/3TXV |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFT2010 thru SFT2014
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
200 AMP
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
100 – 140 Volt
High Energy
NPN Transistor
SFT __ __ __ __
Screening 2/ __ = No Screening
TX = TX Level
│
│
│
│
│
│
│
└
│
│
│
│
│
│
└
│
│
│
│
└
TXV = TXV Level
S = S Level
Features:
BVCBO = 250 V MIN
600 Watts Power Dissipation
Excellent SOA Curve
Es/b of 800mJ
•
•
•
•
•
•
•
Lead Bend 3/ 4/ __ = Straight Leads
└
Package 3/ /3 = TO-3 0.060” pin
Voltage/Family 2010 = 100V
2012 = 120V
Gain of over 5 at 200A
High Reliability Construction
Planar Chip Construction with Low Leakage and
Very Fast Switching
2014 = 140V
•
TX, TXV, S-Level Screening Available2/ -
Consult Factory
Maximum Ratings
Symbol
VCEO
Value
Units
Volts
Collector – Emitter Voltage
SFT2010
SFT2012
SFT2014
100
120
140
Collector – Base Voltage
VCBO
VEBO
IC
250
8
Volts
Volts
Amps
Amps
Emitter – Base Voltage
Collector Current
200
75
Base Current
IB
Total Device Dissipation
TC=50ºC
Derate above 50ºC
600
4
Watts
W/ ºC
PD
TJ & TSTG
R0JC
Operating & Storage Temperature
-65 to +200
ºC
Maximum Thermal Resistance
(Junction to Case)
0.25
ºC/W
NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500.
TO-3
3/ For Package Outlines Contact Factory.
4/ Up and Down Bend Configurations are Available for ‘M’ (TO-254) Packages Only.
5/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0108A
DOC
SFT2010 thru SFT2014
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics
Symbol
BVCEO
Min
Max
Units
Collector – Emitter Breakdown
Voltage *
(IC = 200 mA) SFT2010
SFT2012
100
120
140
––
Volts
SFT2014
Collector – Base Breakdown Voltage *
Emitter – Base Breakdown Voltage *
Collector Cutoff Current
BVCBO
BVEBO
ICBO
250
8
––
––
10
10
Volts
Volts
μA
(IC = 100μA)
(IE = 100μA)
(VCB = 250 V)
(VEB = 7 V)
––
––
Emitter Cutoff Current
DC Current Gain *
IEBO
μA
IC = 10 A, VCE = 2 V
IC = 100 A, VCE = 5 V
IC = 200 A, VCE = 5 V
40
30
5
––
––
––
hFE
Collector-Emitter Saturation Voltage *
(IC = 120 A, IB = 12 A)
(IC = 200 A, IB = 30 A)
––
––
2.0
3.0
VCE (SAT)
VBE (SAT)
fT
Volts
Volts
Mhz
pF
Base-Emitter Saturation Voltage *
Current – Gain – Bandwidth Product
Output Capacitance
(IC = 120 A, IB = 12 A)
––
2.2
(IC = 1.0 A, VCE = 10 V,
f = 10MHz)
30
––
V
CB = 10 V, IE = 0, f = 1.0MHz
Cob
––
1200
––
IB = 1 A, RB1 = RB2 = 20 ohms
VBE(off) = 2.0 V, L = 1.0 mH
RB SOA
Es/b
800
mJ
1
1
––
––
VCE= 20 V, IC= 30 A
CE= 100 V, IC= 0.75 A
FB SOA
On Time
Is/b
sec
ns
V
t(on)
––
800
Storage Time
Fall Time
ts
tf
––
––
1500
400
ns
ns
(VCC = 60 V, IC = 10 A,
IB1 = IB2 = 1.0 A)
1
Available Part
Numbers:
.165
.151
.675
.655
.135 MAX
2x Ø
.525 MAX
2x R.188 MAX
SEATING PLANE
SFT2010/3
SFT2012/3
SFT2014/3
NOTES:
.063
.057
2x
1
THIS DIMENSION SHALL BE MEASURED
AT POINTS .050 - .055" BELOW THE
SEATING PLANE. WHEN GAGE IS NOT
USED, MEASUREMENT WILL BE MADE AT
SEATING PLANE.
2
Ø.875
MAX
.440
.420
.225
.205
2x
THIS OUTLINE DOES NOT MEET THE
MINIMUM CRITERIA ESTABLISHED
BY JS-10 FOR REGISTRATION.
1
.450
.250
1.197
1.177
2x .312 MIN
PIN ASSIGNMENT (Standard)
Collector Emitter Base
Package
TO-3 (/3)
Case
Pin 2
Pin 1
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0108A
DOC
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