SFT2907A2GWTX [SSDI]
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, MICRO MINIATURE PACKAGE-6;
| 型号： | SFT2907A2GWTX |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, MICRO MINIATURE PACKAGE-6 晶体 晶体管 |
| 文件： | 总2页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFT2907A2
Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Dual Microminiature Package
600 mA 60 Volts
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
Dual PNP Transistor
SFT2907A2 __ __
Screening 2/ __= Commercial
TX= TX Level
│
│
│
│
│
└
└
Features:
TXV= TXV Level
S= S Level
• High Speed Switching Transistor
• Multiple Devices Reduce Board Space
• High Power Dissipation: Up to 600 mW
• Replacement for 2N2907AU
Package GW= Gullwing
• TX, TXV, S-Level Screening Available 2/
• NPN Complimentary Parts Available (SFT2222A2)
Maximum Ratings
Symbol
Value
Units
VCEO
VCBO
VEBO
IC
60
60
5
Volts
Volts
Volts
mA
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
600
Continuous Collector Current
Per Device
Total
500
660
PD
mW
Power Dissipation @ TA= 25ºC
TOP & Tstg
RθJ-PCB
-65 to +200
265
ºC
Operating & Storage Temperature
Maximum Thermal Resistance (Junction to PCB)
ºC/W
2x .050
(=.100)
Gullwing (GW)
.015
3x .015
6x .030
6x .010
.015±.010
I
S S D
5x R.018
.350
±.010
.107
.125
.034
.193
.025
.040
±.010
Tolerances:
.xx ±.01
.xxx ±.005
.107
.130
.010
6x R.010
.033
.035
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0031F
DOC
SFT2907A2
Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic 4/
Collector – Emitter Sustaining Voltage
Collector Cutoff Current
Symbol
BVCEO
ICES
Min
60
Max
Units
Volts
nA
IC= 10 mA
VCE= 50 V
––
50
––
VCB= 50 V
VCB= 60 V
VCB= 50 V, TA= 150ºC
0.01
10
10
ICBO
––
µA
µA
Collector Cutoff Current
VEB= 4.0 V
VEB= 5.0 V
0.05
10
IEBO
––
Emitter Cutoff Current
DC Forward Current Transfer Ratio5/
VCE= 10 V, IC= 0.1 mA
VCE= 10 V, IC= 1.0 mA
VCE= 10 V, IC= 10 mA
VCE= 10 V, IC= 150 mA
VCE= 10 V, IC= 500 mA
75
100
100
100
50
––
450
—
300
––
HFE
VCE= 10 V, IC= 10 mA, TA= -55ºC
50
––
Small-signal Forward Current Transfer
Ratio
VCE= 10 V, IC= 1.0 mA, f= 1 kHz
hfe
100
—
IC= 150 mA, IB= 15 mA
IC= 500 mA, IB= 50 mA
––
––
0.4
1.6
Collector – Emitter Saturation Voltage5/
Base – Emitter Saturation Voltage 5/
VCE(Sat)
Volts
IC= 150 mA, IB= 15 mA
IC= 500 mA, IB= 50 mA
0.6
––
1.3
2.6
VBE(Sat)
fT
Volts
MHz
ns
VCE= 20 V, IC= 20 mA, f= 100 MHz
200
––
Frequency Transition
VCC= 30 V, IC= 150 mA, IB1= IB2= 15 mA
VCC= 6 V, IC= 150 mA, IB1= IB2= 15 mA
ton
toff
––
––
45
300
Switching Times
VCE= 10 V, f= 1MHz
VCE= 2.0 V, f= 1MHz
cob
cib
––
––
8.0
30
pF
pF
Output Capacitance
Input Capacitance
NOTES:
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @ 25ºC.
5/ Pulse Test: Pulse Width= 300µsec, Duty Cycle= 2%
PIN ASSIGNMENT
Available Part Numbers:
Package
GW
Pin 1
Pin 2
Base1
Pin 3
Pin 4
Pin 5
Pin 6
SFT2907A2GW
Collector1
Emitter1 Collector2
Base2
Emitter2
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0031F
DOC
相关型号：
SFT2907A2GWTXV
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, MICRO MINIATURE PACKAGE-6
SSDI
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