SFT5001S.5TX [SSDI]
暂无描述;
| 型号： | SFT5001S.5TX |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | 暂无描述 晶体 晶体管 |
| 文件： | 总2页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFT5001
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
5 AMPS
125 Volts
High Speed
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFT5001 __ __ __ __
PNP Transistor
Screening 2/ __ = Not Screened
TX = TX Level
│
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
│
│
│
│
│
│
│
└
└
TXV = TXV Level
Features:
S = S Level
•
•
•
•
•
•
Radiation Tolerant
Superior to JEDEC 2N5001 Series
High Frequency, fT > 80MHz
Very Low Saturation
Fast Switching, 130 ns Max t(on)
Designed for Complementary Use with
SFT3997
Lead Bend 3/ 4/ __ = Straight Leads
UB = Up Bend
DB = Down Bend
Pin Out Configuration 5/ __ = Normal
└
R = Optional
Package 3/ /59 = TO-59
/66 = TO-66
•
TX, TXV, S-Level Screening Available.
Consult Factory.
J = TO-257
S.5 = SMD .5
Maximum Ratings
Symbol
Value
Units
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
VCEO
VCBO
VEB O
IC
80
125
7
Volts
Volts
Volts
Amps
Amps
5
Base Current
IB
1
Total Power Dissipation @ TC = 100ºC
Derate Above 100ºC
30
0.3
Watts
W/ºC
PD
Operating & Storage Temperature
TJ & TSTG
R0JC
-65 to +200
ºC
Maximum Thermal Resistance
(Junction to Case)
3.33
ºC/W
TO-59 (/59)
TO-66 (/66)
TO-257 (J)
SMD .5 (S.5)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0099A
DOC
SFT5001
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics
Symbol
Min
Max
Units
Collector – Emitter Blocking Voltage *
(IC = 10 mA)
(IC = 20 µA)
(IE = 20 µA)
(VCE = 40 V)
(VCB = 100 V)
(VEB = 6 V)
BVCEO
BVCBO
BVEB O
ICEO
80
––
Volts
Collector – Base Blocking Voltage
Emitter – Base Blocking Voltage
Collector Cutoff Current
125
7
––
––
Volts
Volts
μA
––
––
––
10
Collector Cutoff Current
ICBO
1.0
1.0
μA
Emitter Cutoff Current
DC Current Gain *
IEB O
μA
(IC = 50 mA, VCE = 5 V)
(IC = 1.0 A, VCE = 5 V)
(IC = 5.0 A, VCE = 5 V)
50
50
30
––
––
––
hFE
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
(IC = 1.0 A, IB = 100 mA)
(IC = 5.0 A, IB = 500 mA)
––
––
0.5
1.0
VCE (SAT)
VBE(SAT)
Volts
Volts
(IC = 1.0 A, IB = 100 mA)
(IC = 5.0 A, IB = 500 mA)
––
––
0.9
1.2
Current Gain – Bandwidth Product
VCE = 5 V, IC = 0.5 A, f = 10 MHz
VCB = 10 V, IE = 0 A, f = 1.0 MHz
fT
80
––
––
75
MHz
pF
Output Capacitance
Delay Time
Cob
td
tr
––
––
t(on)
t(off)
150
500
ns
ns
Rise Time
Storage Time
Fall Time
(VCC = 20 V, IC = 1.0 A, VBE (off) = 3.7 V, IB1 = IB2 = 100 mA,
RL = 20 Ω)
ts
tf
––
––
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
4/ Up and Down Bend Configurations are Available for ‘J’ (TO-
257) Packages Only.
1/ For Ordering Information, Price, and Availability Contact
Factory.
5/ Optional Pin Out Configurations are Available for ‘J’ (TO-
257) Packages Only.
2/ Screening per MIL-PRF-19500
6/ Unless Otherwise Specified, All Electrical Characteristics
@25ºC.
3/ For Package Outlines Contact Factory.
PIN ASSIGNMENT (Standard)
Available Part Numbers:
Package
TO-59 (/59)
TO-66 (/66)
TO-257 (J)
SMD .5 (S.5)
Collector
Pin 1
Case
Pin 1
Pin 1
Emitter
Pin 2
Pin 2
Pin 2
Pin 2
Base
Pin 3
Pin 3
Pin 3
Pin 3
SFT5001/59 SFT5001/66 SFT5001J SFT5001JUB
SFT5001JDB SFT5001JR SFT5001JRUB SFT5001JRDB
SFT5001S.5
PIN ASSIGNMENT (Optional)
Package
Collector
Emitter
Base
TO-257 (JR)
Pin 2
Pin 3
Pin 1
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