SFT501-G [SSDI]
5 AMP 200 VOLTS PNP HIGH SPEED POWER TRANSISTOR; 5安培200伏特PNP高速功率晶体管
| 型号： | SFT501-G |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | 5 AMP 200 VOLTS PNP HIGH SPEED POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFT501/G and SFT503/G
SERIES
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
5 AMP
DESIGNER'S DATA SHEET
200 VOLTS
1/
PNP HIGH SPEED
POWER TRANSISTOR
Part Number /Ordering Information
SFT501 / G TX
SFT503 / G TX
2/
Screening : _ = Not Screened
FEATURES
TX = TX Level
TXV = TXV Level
• BV
150V Minimum
CEO
• Fast Switching
S
= Space Level
= Normal
• High Frequency, 80MHz Typical
• High Linear Gain (SFT503/G)
• Low Saturation Voltage and Leakage
• 200oC Operating, Gold Eutectic Die Attach
• Designed for Complimentary Use with
SFT502/G and SFT504/G
Polarity:
Package:
_
R
= Reverse
3/
G
= Cerpack
MAXIMUM RATINGS
SYMBOL
VALUE
UNITS
Collector-Base Voltage
V
V
V
200
150
Volts
Volts
Volts
Amps
Amps
oC
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
7.0
Continuous Collector Current
Base Current
I
I
5.0
C
B
1.0
Operating and Storage Temperature
T T
J, STG
-65 to +200
Total Device Dissipation @ T = 100oC
10
W
C
P
D
Derate above 100oC
0.10
W/oC
R
1.8
oC/W
Thermal Resistance, Junction to Case
θJC
Available Part Numbers:
SFT501/G
Cerpack
SFT503/G
SFT501/GR
SFT503/GR
PIN ASSIGNMENT
CODE FUNCTION
BASE
Collector Emitter
Collector Base
PIN 1
PIN 2
Base
Emitter
Normal
-
R
Reverse
NOTE: All specifications are subject to change without notification.
DATA SHEET #: TR0018C
SCD's for these devices should be reviewed by SSDI prior to release.
SFT501/G and SFT503/G
SERIES
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ELECTRICAL CHARACTERISTICS 4/
Collector-Emitter Breakdown Voltage
SYMBOL
MIN
MAX
UNITS
BV
BV
150
-
V
CEO
CBO
(I = 50
C
)
mA
Collector-Base Breakdown Voltage
200
-
-
V
V
(I = 200 µA)
C
Emitter-Base Breakdown Voltage
BV
7
-
EBO
(I = 200 µA)
E
Collector Cutoff Current
I
I
I
500
1
nA
µA
nA
CBO
(V = 100 V
)
CB
DC
Collector Cutoff Current
(V = 100 V
-
CEO
EBO
)
DC
CE
Emitter Cutoff Current
(V = 6 V
-
500
)
DC
EB
DC Current Gain* (V = 5.0V
)
DC
CE
(SFT501)
(SFT503)
(I = 50 mA
)
)
)
)
)
)
20
30
20
50
50
40
-
-
-
-
-
-
C
C
DC
DC
DC
DC
DC
DC
(I = 2.5 A
(I = 5.0 A
C
h
FE
(I = 50 mA
C
(I = 2.5 A
C
(I = 5.0 A
C
(I = 2.5 A
I = 250 mA
)
)
Collector-Emitter Saturation
Voltage*
C
C
DC, B
DC, B
DC
DC
0.75
1.5
V
-
-
V
V
CE(SAT)
DC
DC
(I = 5.0 A
I = 500 mA
(I = 2.5 A
I = 250 mA
)
)
Base-Emitter Saturation
Voltage*
C
DC, B
DC
DC
1.3
1.5
V
BE (SAT)
(I = 5.0 A
I = 500 mA
C
DC, B
Current Gain Bandwidth Product
(I = 500 mA = 5 V f = 10 MHz)
fT
70
-
MHz
V
C
DC , CE
DC,
Output Capacitance
(V = 10 V I = 0 A
C
-
-
225
600
pf
pf
ob
f = 1.0 MHz)
f = 1.0 MHz)
CB
DC ,
E
DC,
DC,
Input Capacitance
C
t
ib
(V = 10 V
I = 0 A
C
BE
DC ,
(V = 50 V
Delay Time
Rise Time
Storage Time
Fall Time
-
-
-
-
50
ns
ns
ns
ns
CC
C
DC ,
d
I = 5 A
,
DC
t
t
t
250
900
300
r
I
B1
= I = 500 mA
)
B2
DC
s
f
NOTES:
*
Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500.
3/ For Package Outlines Contact Factory.
4/ All Electrical Characteristics @ 25oC, Unless Otherwise Specified.
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