SFT503/JTXV [SSDI]
Transistor;型号: | SFT503/JTXV |
厂家: | SOLID STATES DEVICES, INC |
描述: | Transistor |
文件: | 总2页 (文件大小:117K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SFT501/J and SFT503/J
SFT501/JC and SFT503/JC
Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
5 AMP
200 Volts
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
HIGH SPEED
PNP Transistor
SFT501 __ __ __
SFT503 __ __ __
Screening 2/ __ = Not Screen
TX = TX Level
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
│
└
TXV = TXV Level
Features:
S
= S Level
• Fast Switching
• High Frequency, 80 MHz Typical
• BVCEO 150 Volts Min
• High Linear Gain
└ Polarity: __ = Normal
• Low Saturation Voltage and Leakage
• 200ºC Operating Temperature
• Gold Eutectic Die Attach
• Designed for Complementary Use with SFT502/G
and SFT504/G
R
= Reverse
Package 3/
J
= TO-257, glass seals
JC = TO-257, ceramic seals
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
Value
Units
Volts
Volts
Volts
Amps
Amps
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Continues Collector Current
Base Current
150
200
7
5
IB
1
Power Dissipation @ TC = 50ºC
Derate above 50ºC
10
66.6
W
mW/ºC
PD
Operating & Storage Temperature
Maximum Thermal Resistance
Top & Tstg
RθJC
-65 to +200
15
ºC
Junction to Case
ºC/W
NOTES:
TO-257
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500
3/ For Package Outlines Contact Factory.
4/
Unless Otherwise Specified, All Electrical Characteristics
@25ºC.
PIN ASSIGNMENT
Available Part Numbers:
Code
-
R
Function
Pin 1
Pin 2
Pin 3
Base
Emitter
SFT501/J
SFT501/JC
SFT503/J
SFT503/JC
Normal
Reverse
Collector
Collector
Emitter
Base
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
B17BH DATA SHEET #: TR0100A
DOC
SFT501/J and SFT503/J
SFT501/JC and SFT503/JC
Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic 4/
Symbol
Min
Typ
Max
Units
Collector – Emitter Breakdown Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Cutoff Current
IC = 50mA
IC = 200µA
IE = 200µA
VCE = 100 V
VCB = 100 V
VEB = 6 V
BVCEO
BVCBO
BVEB O
ICEO
150
200
7
200
275
13
––
––
Volts
Volts
Volts
µA
––
––
––
––
––
1.0
500
500
Collector – Cutoff Current
ICBO
––
nA
Emitter – Cutoff Current
IEB O
––
nA
DC Current Gain *
SFT501
VCE = 5V, IC = 50mA
VCE = 5V, IC = 2.5A
VCE = 5V, IC = 5A
VCE = 5V, IC = 50mA
VCE = 5V, IC = 2.5A
VCE = 5V, IC = 5A
20
30
20
50
50
40
––
––
70
––
––
70
––
––
––
––
––
––
hFE
––
SFT503
Collector – Emitter Saturation Voltage *
Base – Emitter Saturation Voltage *
IC = 2.5A, IB = 250mA
IC = 5.0A, IB = 500mA
––
––
0.35
0.6
0.75
1.5
VCE(Sat)
VBE(Sat)
Volts
Volts
IC = 2.5A, IB = 250mA
IC = 5.0A, IB = 500mA
––
––
1.0
1.2
1.3
1.5
Current Gain Bandwidth Product
Output Capacitance
VCE = 5V, IC = 0.5A, f = 10MHz
VCB = 10V, IE = 0A, f = 1MHz
VBE = 10V, IC = 0A, f = 1MHz
fT
cob
Cib
td
40
––
––
––
––
––
––
60
130
450
25
––
MHz
pF
225
600
50
Input Capacitance
Delay Time
pF
nsec
nsec
nsec
nsec
Rise Time
Storage Time
Fall Time
VCC = 50V,
IC = 5A,
IB1 = IB2 = 0.5A
tr
40
250
600
300
tS
320
130
tf
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
B17BH DATA SHEET #: TR0100A
DOC
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