SFT504/GRTXV [SSDI]
Power Bipolar Transistor;
| 型号： | SFT504/GRTXV |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Power Bipolar Transistor |
| 文件： | 总2页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFT502/G and SFT504/G
Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
5 AMP, 200 Volts
NPN HIGH SPEED
POWER TRANSISTOR
SFT502/
SFT504/ __ __ __
└ Screening 2/ __ = No Screening
TX = TX Level
│
│
│
│
│
│
│
└
│
│
│
│
Features:
BVCEO 150 V Minimum
Fast Switching
TXV = TXV Level
S = S Level
High Frequency, 50 MHz Typical
High Linear Gain (SFT504G)
Low Saturation Voltage and Leakage
200oC Operating Temperature
Gold Eutectic Die Attach
TX, TXV, S-Level Screening Available
Designed for Complementary Use with SFT501/G
and SFT503/G
└ Polarity __ = Normal
R = Reverse
Package
G = CERPACK
Maximum Ratings3/
Symbol
VCBO
Max
Units
Volts
Collector – Base Voltage
Collector – Emitter Voltage
200
VCEO
VEBO
IC
150
7.0
Volts
Volts
Amps
Amps
ºC
Emitter – Base Voltage
Continuous Collector Current
Base Current
5.0
IB
1.0
Operating & Storage Temperature
TJ & TSTG
-65 to +200
Total Power Dissipation @ TC = 100ºC
Derate above 100ºC
10
0.10
W
W/ºC
PD
Thermal Resistance
(Junction to Case)
R0JC
2.4
ºC/W
CERPACK (G)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0078C
DOC
SFT502/G and SFT504/G
Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics3/
Symbol
Min
Max
Units
Collector – Emitter Breakdown Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
IC = 50 mA
IC = 200 μA
IE = 200 µA
BVCEO
BVCBO
BVEBO
150
200
7
-
-
-
Volts
Volts
Volts
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
V
CB = 100 V
ICBO
ICEO
IEBO
-
-
-
500
1
nA
µA
nA
VCE = 100 V
VEB = 6 V
500
DC Current Gain* VCE = 5 V
SFT502
IC = 50 mA
IC = 2.5 A
IC = 5.0 A
IC = 50 mA
IC = 2.5 A
IC = 5 A
20
30
20
50
50
40
-
-
-
-
-
-
HFE
SFT504
Collector-Emitter Saturation Voltage*
Base-Emitter Saturation Voltage*
IC = 2.5 A, IB = 250 mA
IC = 5.0 A, IB = 500 mA
-
-
0.75
1.5
VCE (SAT)
VBE (SAT)
V
V
IC = 2.5 A, IB = 250 mA
IC = 5.0 A, IB = 500 mA
-
-
1.3
1.5
Current Gain Bandwidth Product*
Output Capacitance
IC = 500 mA, VCE = 5 V, f = 10 MHz
CB = 10 V, IE = 0 A, f = 1.0MHz
fT
70
-
-
MHz
pF
V
Cob
Cib
225
900
Input Capacitance
VCB = 10 V, IC = 0 A, f = 1.0MHz
-
pF
Delay Time
Rise Time
Storage Time
Fall Time
td
tr
ts
tf
-
-
-
-
50
250
1200
300
ns
ns
ns
ns
VCC = 50 V
IC = 5 A
IB1 = IB2 = 500 mA
NOTES:
*Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
CASE OUTLINE: CERPACK
1/ For ordering information, price, operating curves, and
availability, contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows
available on request.
3/ Unless otherwise specified, maximum ratings/electrical
characteristics at 25°C.
PIN ASSIGNMENT
CODE
-
R
FUNCTION
Normal
Reverse
BASE
Collector
Collector
PIN 1
Emitter
Base
PIN 2
Base
Emitter
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0078C
DOC
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