SFT5152/5DB [SSDI]

Power Bipolar Transistor;
SFT5152/5DB
型号: SFT5152/5DB
厂家: SOLID STATES DEVICES, INC    SOLID STATES DEVICES, INC
描述:

Power Bipolar Transistor

开关 晶体管
文件: 总3页 (文件大小:161K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SFT5152 and SFT5154  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
DESIGNER’S DATA SHEET  
Part Number / Ordering Information 1/  
10 AMP  
POWER TRANSISTORS  
SILICON NPN  
SFT5152 __ __ __  
SFT5154 __ __ __  
Screening 2/  
100 VOLTS  
10 WATTS  
__= Not Screened  
TX= TX Level  
TXV = TXV Level  
S = S Level  
Features:  
Radiation Tolerant  
Lead Bend Options  
__ = Straight  
Fast Switching, 500 nsec max ton  
High Frequency, Typical ft = 85 MHz  
BVCEO 80 Volts Min  
High Linear Gain, Low Saturation Voltage  
200ºC Operating Temperature  
Designed for Complementary Use with SFT5151 and  
SFT5153  
UB = Up Bend  
DB = Down Bend  
Package 3/  
J = TO-257  
/5 = TO-5  
G = Cerpack  
S.5 = SMD.5  
Replacement for 2N5152 and 2N5154  
TX, TXV, S-Level Screening Available2/ - Consult Factory  
Maximum Ratings  
Symbol  
Value  
Units  
Collector – Emitter Voltage  
Collector – Base Voltage  
Emitter – Base Voltage  
Collector Current  
VCEO  
80  
Volts  
VCBO  
VEBO  
IC  
100  
5.5  
10  
Volts  
Volts  
Amps  
Amps  
Base Current  
IB  
2.5  
Total Device Dissipation @ TC = 50ºC  
Derate above 50ºC  
10  
66.6  
W
mW/ºC  
PD  
Operating & Storage Temperature  
Top & Tstg  
-65 to +200  
ºC  
TO-257 (J)  
TO-5 (/5)  
Cerpack (G)  
SMD.5 (S.5)  
5
10  
3
Maximum Thermal Resistance  
Junction to Case  
RθJC  
ºC/W  
3
NOTES:  
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%  
TO-257 (J)  
TO-5 (/5)  
Cerpack (G) SMD.5 (S.5)  
1/ For ordering information, price, operating curves, and  
availability - contact factory.  
2/ Screening based on MIL-PRF-19500. Screening flows available  
on request.  
3/ For package outlines - contact factory.  
4/ Unless otherwise specified, all electrical characteristics @25ºC.  
Available parts:  
SFT5152J, SFT5152/5, SFT5152G, SFT5152S.5  
SFT5154J, SFT5154/5, SFT5154G, SFT5154S.5  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: TR0110B  
DOC  
SFT5152 and SFT5154  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
Electrical Characteristic4/  
Symbol  
BVCEO  
Min  
Max  
Units  
Collector – Emitter Breakdown  
Voltage*  
IC = 100mA  
80  
––  
Volts  
Collector – Base Breakdown Voltage  
Emitter – Base Breakdown Voltage  
Collector – Cutoff Current  
IC = 200µA  
IE = 200µA  
BVCBO  
BVEBO  
ICEO  
100  
5.5  
––  
––  
––  
50  
25  
Volts  
Volts  
µA  
VCE = 40V  
Collector – Cutoff Current  
V
CE = 60V, VBE = 2V, TC = 150°C  
ICEV  
––  
µA  
VCE = 60V  
1.0  
1.0  
µA  
mA  
Collector – Cutoff Current  
ICES  
IEBO  
––  
––  
VCE = 100V  
VEB = 4V  
1.0  
1.0  
µA  
mA  
Emitter – Cutoff Current  
DC Current Gain *  
V
EB = 5.5V  
CE = 5V, IC = 50mA  
CE = 5V, IC = 2.5A  
V
V
20  
30  
15  
20  
50  
70  
25  
40  
––  
250  
––  
––  
––  
250  
––  
––  
SFT5152  
VCE = 5V, IC = 2.5A, TA = -55°C  
VCE = 5V, IC = 5A  
hFE  
––  
V
V
CE = 5V, IC = 50mA  
CE = 5V, IC = 2.5A  
VCE = 5V, IC = 2.5A, TA = -55°C  
CE = 5V, IC = 5A  
SFT5154  
V
Collector – Emitter Saturation Voltage *  
Base – Emitter Saturation Voltage *  
IC = 2.5A, IB = 250mA  
IC = 5.0A, IB = 500mA  
––  
––  
0.75  
1.5  
VCE(Sat)  
VBE(Sat)  
hfe  
Volts  
Volts  
––  
IC = 2.5A, IB = 250mA  
IC = 5.0A, IB = 500mA  
––  
––  
1.45  
2.2  
Common Emitter small signal  
gain  
V
CE = 5V, IC = 0.1A,  
20  
50  
SFT5152  
SFT5154  
––  
––  
f= 1kHz  
Current Gain Bandwidth Product  
SFT5152  
SFT5154  
60  
70  
VCE = 5V, IC = 0.5A, f = 10MHz  
fT  
MHz  
Output Capacitance  
V
CB = 10V, IE = 0A, f = 1MHz  
cob  
––  
––  
250  
pF  
Base – Emitter Voltage*  
VCE = 5V, IC = 2.5A VBE(ON)  
1.45  
Volts  
V
CE = 5V, IC = 2.0A, 1 sec  
SOA1  
SOA2  
SOA3  
Safe Operating Area  
VCE = 32V, IC = 310 mA, 1 sec  
VCE = 80V, IC = 12.5mA, 1 sec  
––  
––  
––  
ON Time  
VCC = 30V, VEB(Off) = 3.7V  
tON  
tOFF  
500  
1500  
––  
––  
nsec  
µsec  
IC = 5A  
OFF Time  
Storage Time  
Fall Time  
tS  
tf  
1.4  
0.5  
V
EB(Off) = 3.7V, IB1 = IB2 = 0.5A,  
RL = 6 Ohms  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: TR0110B  
DOC  
SFT5152 and SFT5154  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
TO-257 (J)  
TO-5 (/5)  
PIN ASSIGNMENT  
PIN ASSIGNMENT  
Package  
TO-5  
Pin 1  
Pin 2  
Pin 3 (Case)  
Package  
TO-257  
Pin 1  
Pin 2  
Pin 3  
Emitter  
Base  
Collector  
Collector  
Emitter  
Base  
Cerpack (G)  
Bottom View  
SMD.5 (S.5)  
PIN ASSIGNMENT  
Package  
SMD.5  
Pin 1  
Pin 2  
Pin 3  
PIN ASSIGNMENT  
Collector  
Emitter  
Base  
Package  
Cerpack  
Pin 1  
Pin 2  
Tab  
Emitter  
Base  
Collector  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: TR0110B  
DOC  

相关型号:

SFT5152/5DBS

Power Bipolar Transistor
SSDI

SFT5152/5DBTX

Power Bipolar Transistor
SSDI

SFT5152/5DBTXV

Power Bipolar Transistor
SSDI

SFT5152/5UB

Power Bipolar Transistor
SSDI

SFT5152/5UBS

Power Bipolar Transistor
SSDI

SFT5152GDB

Power Bipolar Transistor
SSDI

SFT5152GDBS

Power Bipolar Transistor
SSDI

SFT5152GDBTXV

暂无描述
SSDI

SFT5152GUB

Power Bipolar Transistor
SSDI

SFT5152GUBTXV

Power Bipolar Transistor
SSDI

SFT5152JDB

Power Bipolar Transistor
SSDI

SFT5152JTXV

暂无描述
SSDI