SFT5553AJSBRTX [SSDI]
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-257, Plastic/Epoxy, 3 Pin, TO-257, 3 PIN;型号: | SFT5553AJSBRTX |
厂家: | SOLID STATES DEVICES, INC |
描述: | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-257, Plastic/Epoxy, 3 Pin, TO-257, 3 PIN 晶体 晶体管 |
文件: | 总2页 (文件大小:125K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SFT5553A/G
Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
5 AMP
100 Volts
PNP Power Transistor
SFT5553A __ __ __
Screening 2/ __ = Not Screen
TX = TX Level
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
Features:
• BVCEO 80V
• Fast Switching
• Very High Gain
• Low Saturation Voltage
• 200 ºC Operating Temperature
• Gold Eutectic Die Attach
• TX, TXV, S-Level Screening Available
TXV = TXV Level
S = S Level
Polarity __ = Normal
R = Reverse
Package /G = Cerpack
Maximum Ratings
Symbol
BVCBO
Value
100
Units
Volts
Volts
Collector – Base Voltage
Collector – Emitter Voltage
BVCEO
80
Emitter – Base Voltage
Continuous Collector Current
Base Current
BVEBO
IC
6.0
5.0
2.0
Volts
Amps
Amps
IB
Power Dissipation @ TC ≤ 100ºC
Derate above 100ºC
40
0.4
W
W/ ºC
PD
Operating & Storage Temperature
Thermal Resistance, Junction to Case
Top & Tstg
RθJC
-65 to +200
1.8
ºC
ºC/W
Cerpack Outline:
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0015E
SFT5553A/G
Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics 3/
Symbol Min
Max Units
Collector – Emitter Breakdown Voltage
IC = 100 µADC
IC = 100 µADC
IE = 20 µADC
80
100
6
––
––
Volts
Volts
Volts
µA
BVCEO
BVCBO
BVEBO
IEBO
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
––
VEB = 5 VDC
––
––
––
10
Emitter – Cutoff Current
Collector – Cutoff Current
VCB = 100 VDC
10
µA
ICBO
VCE = 80 VDC
Collector – Cutoff Current
DC Current Gain *
100
µA
ICEO
V
CE = 1.1VDC, IC = 1.0ADC
VCE = 1.32VDC, IC = 2.5ADC
VCE = 2.2VDC, IC = 5.0ADC
80
55
25
220
150
120
––
HFE
Collector – Emitter Saturation Voltage *
Base – Emitter Saturation Voltage *
Base – Emitter On Voltage *
IC = 2.5ADC, IB = 0.2ADC
IC = 2.5ADC, IB = 0.2ADC
––
––
––
40
––
0.5
1.1
VDC
VDC
VDC
MHz
pF
VCE(SAT)
VBE(SAT)
VBE(ON)
fT
IC = 2.5ADC, VCE = 1.3VDC
0.95
––
IC = 50mADC, VCE = 10VDC, f = 20MHz
VCB = 30VDC, IE = 0ADC, f = 1.0MHz
Current Gain Bandwidth Product
120
Output Capacitance
Turn On Time
cob
––
––
200
nsec
nsec
t(on)
t(off)
VCC = 200VDC, IC = 1.0ADC
,
IB1 = IB2 = 100mADC, RB1 = RB2 = 40Ω
Turn Off Time
1500
NOTES:
*
Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500
PIN ASSIGNMENT (Standard)
Available Part Numbers:
Code Function
Base
Collector
Collector
PIN 1
Emitter
Base
PIN 2
Base
Emitter
SFT5553A/G
SFT5553A/GR
---
R
Normal
Reverse
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0015E
相关型号:
SFT5553AJSBRTXV
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-257, Plastic/Epoxy, 3 Pin, TO-257, 3 PIN
SSDI
SFT5666/39
Small Signal Bipolar Transistor, 5A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
SSDI
SFT5672/3
Power Bipolar Transistor, 30A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
SSDI
©2020 ICPDF网 联系我们和版权申明